FR2879625A1 - Dispositif de nitruration par implantation ionique d'une piece en alliage d'aluminium et procede mettant en oeuvre un tel dispositif - Google Patents
Dispositif de nitruration par implantation ionique d'une piece en alliage d'aluminium et procede mettant en oeuvre un tel dispositif Download PDFInfo
- Publication number
- FR2879625A1 FR2879625A1 FR0500963A FR0500963A FR2879625A1 FR 2879625 A1 FR2879625 A1 FR 2879625A1 FR 0500963 A FR0500963 A FR 0500963A FR 0500963 A FR0500963 A FR 0500963A FR 2879625 A1 FR2879625 A1 FR 2879625A1
- Authority
- FR
- France
- Prior art keywords
- source
- ions
- implantation
- ion
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002513 implantation Methods 0.000 title claims abstract description 43
- 229910000838 Al alloy Inorganic materials 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims description 35
- 238000005121 nitriding Methods 0.000 title description 8
- 150000002500 ions Chemical class 0.000 claims abstract description 85
- 238000000605 extraction Methods 0.000 claims abstract description 18
- 238000005468 ion implantation Methods 0.000 claims abstract description 13
- 238000010884 ion-beam technique Methods 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 19
- 238000001816 cooling Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 38
- 229910052757 nitrogen Inorganic materials 0.000 description 24
- 235000019589 hardness Nutrition 0.000 description 21
- 229910000831 Steel Inorganic materials 0.000 description 12
- 239000010959 steel Substances 0.000 description 12
- 230000001965 increasing effect Effects 0.000 description 11
- -1 nitrogen ions Chemical class 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 239000004033 plastic Substances 0.000 description 9
- 229920003023 plastic Polymers 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000001311 chemical methods and process Methods 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 239000013081 microcrystal Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical group [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005461 lubrication Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 101100452236 Caenorhabditis elegans inf-1 gene Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000011960 computer-aided design Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 101150002826 inf2 gene Proteins 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002991 molded plastic Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Electron Sources, Ion Sources (AREA)
- Particle Accelerators (AREA)
Abstract
Description
Claims (12)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0500963A FR2879625B1 (fr) | 2004-02-04 | 2005-01-31 | Dispositif de nitruration par implantation ionique d'une piece en alliage d'aluminium et procede mettant en oeuvre un tel dispositif |
EP05717536A EP1725694A2 (fr) | 2004-02-04 | 2005-02-02 | Dispositif et procede d' implantation ionique d'une piece en alliage d'aluminium |
BRPI0507447-9A BRPI0507447A (pt) | 2004-02-04 | 2005-02-02 | dispositivo de implantação de ìons em uma peça de liga de alumìnio e processo de tratamento de uma liga de alumìnio |
NZ549587A NZ549587A (en) | 2004-02-04 | 2005-02-02 | Device for nitriding by ionic implantation of an aluminium alloy part, and corresponding method |
PCT/FR2005/000224 WO2005085491A2 (fr) | 2004-02-04 | 2005-02-02 | Dispositif et procede d'implantation ionique d'une piece en alliage d'aluminium |
CA002554921A CA2554921A1 (fr) | 2004-02-04 | 2005-02-02 | Dispositif de nitruration par implantation ionique d'une piece en alliage d'aluminium et procede mettant en oeuvre un tel dispositif |
US10/587,465 US20090212238A1 (en) | 2004-02-04 | 2005-02-02 | Apparatus for ion nitriding an aluminum alloy part and process employing such apparatus |
JP2006551878A JP2007524760A (ja) | 2004-02-04 | 2005-02-02 | アルミニウム合金製の部品をイオン注入によって窒化処理する装置および、そのような装置を利用する方法 |
KR1020067018009A KR20070029139A (ko) | 2004-02-04 | 2005-02-02 | 이온을 주입하여 알루미늄 합금 부품을 질화 처리하는 장치및 방법 |
AU2005219596A AU2005219596B2 (en) | 2004-02-04 | 2005-02-02 | Device and method for nitriding by ionic implantation of an aluminium alloy part |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0401047A FR2876390A1 (fr) | 2004-02-04 | 2004-02-04 | Procede de nitruration par implantation ionique d'une piece metallique et dispositif de mise en oeuvre du procede |
FR0401749A FR2876391B1 (fr) | 2004-02-04 | 2004-02-21 | Procede de nitruration pour implantation ionique d'une piece metallique et dispositif de mise en oeuvre du procede |
FR0500963A FR2879625B1 (fr) | 2004-02-04 | 2005-01-31 | Dispositif de nitruration par implantation ionique d'une piece en alliage d'aluminium et procede mettant en oeuvre un tel dispositif |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2879625A1 true FR2879625A1 (fr) | 2006-06-23 |
FR2879625B1 FR2879625B1 (fr) | 2007-04-27 |
Family
ID=34922951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0500963A Expired - Fee Related FR2879625B1 (fr) | 2004-02-04 | 2005-01-31 | Dispositif de nitruration par implantation ionique d'une piece en alliage d'aluminium et procede mettant en oeuvre un tel dispositif |
Country Status (10)
Country | Link |
---|---|
US (1) | US20090212238A1 (fr) |
EP (1) | EP1725694A2 (fr) |
JP (1) | JP2007524760A (fr) |
KR (1) | KR20070029139A (fr) |
AU (1) | AU2005219596B2 (fr) |
BR (1) | BRPI0507447A (fr) |
CA (1) | CA2554921A1 (fr) |
FR (1) | FR2879625B1 (fr) |
NZ (1) | NZ549587A (fr) |
WO (1) | WO2005085491A2 (fr) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2906261B1 (fr) * | 2006-09-26 | 2010-02-26 | Quertech Ingenierie | Dispositif de nitruration par implantation ionique d'une piece en alliage d'or et procede mettant en oeuvre un tel dispositif |
FR2907130B1 (fr) * | 2006-10-11 | 2010-02-26 | Quertech Ingenierie | Dispositif de nitruration par implantation ionique d'une piece en cuivre ou en alliage de cuivre et procede mettant en oeuvre un tel dispositif |
FR2907469B1 (fr) * | 2006-10-18 | 2010-02-26 | Quertech Ingenierie | Dispositif de nitruration par implantation ionique d'une piece en alliage de titane et procede mettant en oeuvre un tel dispositif. |
FR2907797B1 (fr) * | 2006-10-26 | 2011-07-22 | Quertech Ingenierie | Dispositif de nitruration par implantation ionique d'une piece en alliage a memoire de forme en nickel titane et procede mettant en oeuvre un tel dispositif. |
FR2899242B1 (fr) * | 2007-04-05 | 2010-10-22 | Quertech Ingenierie | Procede de durcissement par implantation d'ions d'helium dans une piece metallique |
FR2920785B1 (fr) * | 2007-09-11 | 2010-02-26 | Quertech Ingenierie | Traitement de la porosite des metaux par bombardement ionique |
FR2939150B1 (fr) * | 2008-12-01 | 2011-10-21 | Quertech Ingenierie | Procede de traitement d'une partie metallique par un faisceau d'ions |
FR2942801B1 (fr) * | 2009-03-05 | 2012-03-23 | Quertech Ingenierie | Procede de traitement d'une piece en elastomere par des ions multi-energies he+ et he2+ pour diminuer le frottement |
FR2947378A1 (fr) | 2009-06-29 | 2010-12-31 | Quertech Ingenierie | Systeme magnetique formant des surfaces iso modules fermees a partir de structures magnetiques de type "cusp" et sources d'ions de type rce mettant en oeuvre un tel systeme |
FR2949236B1 (fr) | 2009-08-19 | 2011-10-28 | Aircelle Sa | Procede d'implantation ionique pour la realisation d'une surface hydrophobe |
FR2962448B1 (fr) * | 2010-07-08 | 2013-04-05 | Quertech Ingenierie | Procede de traitement d'une surface d'une piece en polymere par des ions multicharges et multi-energies |
US20130149459A1 (en) | 2010-07-02 | 2013-06-13 | Aptar France Sas | Method for the surface treatment of a fluid product dispensing device |
CN103108981B (zh) * | 2010-07-02 | 2015-11-25 | 阿普塔尔法国简易股份公司 | 流体产品的分配设备的表面处理方法 |
WO2012001321A2 (fr) | 2010-07-02 | 2012-01-05 | Valois Sas | Procede de traitement de surface elastomere d'un dispositif de distribution de produit fluide. |
JP2013532037A (ja) | 2010-07-02 | 2013-08-15 | アプター フランス エスアーエス | 流体投与装置の表面処理方法 |
CN103097573A (zh) | 2010-07-02 | 2013-05-08 | 阿普塔尔法国简易股份公司 | 流体产品的分配设备的表面处理方法 |
WO2012153412A1 (fr) * | 2011-05-12 | 2012-11-15 | トヨタ自動車 株式会社 | Procédé pour modifier la surface d'un alliage d'aluminium et composant coulissant |
DE102011106044A1 (de) * | 2011-06-27 | 2012-12-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur gezielten Einstellung einer Tropfenkondensation auf einer Oberfläche eines Substrats mittels Ionenimplantation |
JP6138007B2 (ja) * | 2012-09-27 | 2017-05-31 | 東洋アルミニウム株式会社 | 導電部材、電極、二次電池、キャパシタ、ならびに、導電部材および電極の製造方法 |
FR3004465B1 (fr) * | 2013-04-11 | 2015-05-08 | Ion Beam Services | Machine d'implantation ionique presentant une productivite accrue |
WO2015176850A1 (fr) * | 2014-05-23 | 2015-11-26 | Quertech | Procédé de traitement par faisceau d'ions à une seule charge ou à plusieurs charges permettant la production d'un matériau en saphir antireflet |
FR3046799B1 (fr) * | 2016-01-20 | 2018-03-02 | Quertech | Procede de traitement par un faisceau d'ions d'un gaz mono et multicharges pour produire des metaux colores |
EP3425085A1 (fr) * | 2017-07-07 | 2019-01-09 | The Swatch Group Research and Development Ltd | Procede de traitement de surface de particules d'une poudre metallique et particules de poudre metallique obtenues grace a ce procede |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4597808A (en) * | 1984-04-05 | 1986-07-01 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Process for ion nitriding aluminum or aluminum alloys |
US4698233A (en) * | 1985-06-24 | 1987-10-06 | Nippon Light Metal Company Limited | Production of aluminum material having an aluminum nitride layer |
US5625195A (en) * | 1994-04-06 | 1997-04-29 | France Telecom | High-energy implantation process using an ion implanter of the low-or medium-current type and corresponding devices |
US5925886A (en) * | 1996-06-20 | 1999-07-20 | Hitachi, Ltd. | Ion source and an ion implanting apparatus using it |
WO2000026431A1 (fr) * | 1998-11-03 | 2000-05-11 | Epion Corporation | Faisceaux ioniques d'amas gazeux pour formation de films de nitrure |
EP1288329A1 (fr) * | 2001-09-03 | 2003-03-05 | C C R GmbH Beschichtungstechnologie | Procédé de fabrication de couches minces de nitrures ou oxydes |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2593011B2 (ja) * | 1991-08-20 | 1997-03-19 | 株式会社ライムズ | 硬質膜被覆金属部材の製造方法 |
JPH0636734A (ja) * | 1992-07-16 | 1994-02-10 | Japan Steel Works Ltd:The | イオン注入法による基板製造方法 |
JP3157943B2 (ja) * | 1993-03-01 | 2001-04-23 | 株式会社リコー | 基体表面の改質処理方法およびその改質処理装置 |
US5811823A (en) * | 1996-02-16 | 1998-09-22 | Eaton Corporation | Control mechanisms for dosimetry control in ion implantation systems |
JPH1064462A (ja) * | 1996-08-23 | 1998-03-06 | Nec Yamagata Ltd | イオン注入装置 |
GB2382716B (en) * | 1998-07-21 | 2003-09-03 | Applied Materials Inc | Ion Implantation Beam Monitor |
JP4252237B2 (ja) * | 2000-12-06 | 2009-04-08 | 株式会社アルバック | イオン注入装置およびイオン注入方法 |
US6936551B2 (en) * | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
WO2004038395A2 (fr) * | 2002-10-25 | 2004-05-06 | Centre De Recherche Public - Gabriel Lippmann | Procede et appareil de depot in situ de cesium (cs) en ultravide a des fins d'analyses |
-
2005
- 2005-01-31 FR FR0500963A patent/FR2879625B1/fr not_active Expired - Fee Related
- 2005-02-02 KR KR1020067018009A patent/KR20070029139A/ko not_active Application Discontinuation
- 2005-02-02 US US10/587,465 patent/US20090212238A1/en not_active Abandoned
- 2005-02-02 CA CA002554921A patent/CA2554921A1/fr not_active Abandoned
- 2005-02-02 BR BRPI0507447-9A patent/BRPI0507447A/pt not_active Application Discontinuation
- 2005-02-02 NZ NZ549587A patent/NZ549587A/en not_active IP Right Cessation
- 2005-02-02 AU AU2005219596A patent/AU2005219596B2/en not_active Ceased
- 2005-02-02 JP JP2006551878A patent/JP2007524760A/ja active Pending
- 2005-02-02 EP EP05717536A patent/EP1725694A2/fr not_active Withdrawn
- 2005-02-02 WO PCT/FR2005/000224 patent/WO2005085491A2/fr active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4597808A (en) * | 1984-04-05 | 1986-07-01 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Process for ion nitriding aluminum or aluminum alloys |
US4698233A (en) * | 1985-06-24 | 1987-10-06 | Nippon Light Metal Company Limited | Production of aluminum material having an aluminum nitride layer |
US5625195A (en) * | 1994-04-06 | 1997-04-29 | France Telecom | High-energy implantation process using an ion implanter of the low-or medium-current type and corresponding devices |
US5925886A (en) * | 1996-06-20 | 1999-07-20 | Hitachi, Ltd. | Ion source and an ion implanting apparatus using it |
WO2000026431A1 (fr) * | 1998-11-03 | 2000-05-11 | Epion Corporation | Faisceaux ioniques d'amas gazeux pour formation de films de nitrure |
EP1288329A1 (fr) * | 2001-09-03 | 2003-03-05 | C C R GmbH Beschichtungstechnologie | Procédé de fabrication de couches minces de nitrures ou oxydes |
Also Published As
Publication number | Publication date |
---|---|
WO2005085491A2 (fr) | 2005-09-15 |
BRPI0507447A (pt) | 2007-07-10 |
KR20070029139A (ko) | 2007-03-13 |
CA2554921A1 (fr) | 2005-09-15 |
AU2005219596B2 (en) | 2010-05-13 |
JP2007524760A (ja) | 2007-08-30 |
EP1725694A2 (fr) | 2006-11-29 |
US20090212238A1 (en) | 2009-08-27 |
FR2879625B1 (fr) | 2007-04-27 |
WO2005085491A3 (fr) | 2007-09-13 |
NZ549587A (en) | 2010-08-27 |
AU2005219596A1 (en) | 2005-09-15 |
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