FR2871295B1 - Dispositif de protection contre les surtensions et son procede de fabrication - Google Patents
Dispositif de protection contre les surtensions et son procede de fabricationInfo
- Publication number
- FR2871295B1 FR2871295B1 FR0451090A FR0451090A FR2871295B1 FR 2871295 B1 FR2871295 B1 FR 2871295B1 FR 0451090 A FR0451090 A FR 0451090A FR 0451090 A FR0451090 A FR 0451090A FR 2871295 B1 FR2871295 B1 FR 2871295B1
- Authority
- FR
- France
- Prior art keywords
- protection device
- overvoltage protection
- manufacturing same
- manufacturing
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0451090A FR2871295B1 (fr) | 2004-06-02 | 2004-06-02 | Dispositif de protection contre les surtensions et son procede de fabrication |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0451090A FR2871295B1 (fr) | 2004-06-02 | 2004-06-02 | Dispositif de protection contre les surtensions et son procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2871295A1 FR2871295A1 (fr) | 2005-12-09 |
FR2871295B1 true FR2871295B1 (fr) | 2006-11-24 |
Family
ID=34948361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0451090A Expired - Fee Related FR2871295B1 (fr) | 2004-06-02 | 2004-06-02 | Dispositif de protection contre les surtensions et son procede de fabrication |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2871295B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111579894B (zh) * | 2019-08-23 | 2022-06-10 | 浙江得玛斯科技有限公司 | 一种钢轨电位限制装置测试方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1102836A (en) * | 1966-01-06 | 1968-02-14 | Westinghouse Brake & Signal | Multi-junction semi-conductor elements |
JPH0666462B2 (ja) * | 1987-12-21 | 1994-08-24 | 日本電気株式会社 | 半導体保護素子 |
DE4229307A1 (de) * | 1992-09-02 | 1994-03-03 | D & D Hardware Software Und Do | Überspannungsableiterbauelement |
-
2004
- 2004-06-02 FR FR0451090A patent/FR2871295B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2871295A1 (fr) | 2005-12-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 12 |
|
ST | Notification of lapse |
Effective date: 20170228 |