FR2866977B1 - Dispositif de memoire resistive et son procede de fabrication - Google Patents

Dispositif de memoire resistive et son procede de fabrication

Info

Publication number
FR2866977B1
FR2866977B1 FR0408015A FR0408015A FR2866977B1 FR 2866977 B1 FR2866977 B1 FR 2866977B1 FR 0408015 A FR0408015 A FR 0408015A FR 0408015 A FR0408015 A FR 0408015A FR 2866977 B1 FR2866977 B1 FR 2866977B1
Authority
FR
France
Prior art keywords
manufacturing
same
memory device
resistive memory
resistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0408015A
Other languages
English (en)
Other versions
FR2866977A1 (fr
Inventor
Lung T Tran
Brocklin Andrew L Van
Warren B Jackson
Janice Nickel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Development Co LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Publication of FR2866977A1 publication Critical patent/FR2866977A1/fr
Application granted granted Critical
Publication of FR2866977B1 publication Critical patent/FR2866977B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
FR0408015A 2003-10-29 2004-07-20 Dispositif de memoire resistive et son procede de fabrication Expired - Fee Related FR2866977B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/695,710 US7057258B2 (en) 2003-10-29 2003-10-29 Resistive memory device and method for making the same

Publications (2)

Publication Number Publication Date
FR2866977A1 FR2866977A1 (fr) 2005-09-02
FR2866977B1 true FR2866977B1 (fr) 2007-04-06

Family

ID=34549993

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0408015A Expired - Fee Related FR2866977B1 (fr) 2003-10-29 2004-07-20 Dispositif de memoire resistive et son procede de fabrication

Country Status (3)

Country Link
US (1) US7057258B2 (fr)
FR (1) FR2866977B1 (fr)
TW (1) TW200515589A (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2861887B1 (fr) * 2003-11-04 2006-01-13 Commissariat Energie Atomique Element de memoire a changement de phase a cyclabilite amelioree
TW200633193A (en) * 2004-12-02 2006-09-16 Koninkl Philips Electronics Nv Non-volatile memory
US7208372B2 (en) * 2005-01-19 2007-04-24 Sharp Laboratories Of America, Inc. Non-volatile memory resistor cell with nanotip electrode
US7777261B2 (en) * 2005-09-20 2010-08-17 Grandis Inc. Magnetic device having stabilized free ferromagnetic layer
US20070278471A1 (en) * 2006-05-30 2007-12-06 Bomy Chen Novel chalcogenide material, switching device and array of non-volatile memory cells
US7851840B2 (en) * 2006-09-13 2010-12-14 Grandis Inc. Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier
US7372753B1 (en) * 2006-10-19 2008-05-13 Unity Semiconductor Corporation Two-cycle sensing in a two-terminal memory array having leakage current
US7379364B2 (en) * 2006-10-19 2008-05-27 Unity Semiconductor Corporation Sensing a signal in a two-terminal memory array having leakage current
JP4343940B2 (ja) * 2006-10-31 2009-10-14 Ｔｄｋ株式会社 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ハードディスク装置および磁気抵抗効果素子の製造方法
US20090039462A1 (en) * 2007-08-07 2009-02-12 Mediatek Inc. Efuse devices and efuse arrays thereof and efuse blowing methods
US8058615B2 (en) * 2008-02-29 2011-11-15 Sionyx, Inc. Wide spectral range hybrid image detector
US7719876B2 (en) 2008-07-31 2010-05-18 Unity Semiconductor Corporation Preservation circuit and methods to maintain values representing data in one or more layers of memory
US7894248B2 (en) * 2008-09-12 2011-02-22 Grandis Inc. Programmable and redundant circuitry based on magnetic tunnel junction (MTJ)
US7830701B2 (en) * 2008-09-19 2010-11-09 Unity Semiconductor Corporation Contemporaneous margin verification and memory access for memory cells in cross point memory arrays
US9331211B2 (en) * 2009-08-28 2016-05-03 X-Fab Semiconductor Foundries Ag PN junctions and methods
GB0915501D0 (en) * 2009-09-04 2009-10-07 Univ Warwick Organic photosensitive optoelectronic devices
US10916317B2 (en) * 2010-08-20 2021-02-09 Attopsemi Technology Co., Ltd Programmable resistance memory on thin film transistor technology
US8877531B2 (en) 2010-09-27 2014-11-04 Applied Materials, Inc. Electronic apparatus
US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
US20140164869A1 (en) * 2011-07-27 2014-06-12 Erik Ordentlich Efficient data-storage devices that include memory elements characterized by potentially large switching latencies
WO2013055332A1 (fr) 2011-10-12 2013-04-18 Hewlett-Packard Development Company, L.P. Dispositif de sélection pour des structures de mémoire à points de croisement
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
US11062786B2 (en) 2017-04-14 2021-07-13 Attopsemi Technology Co., Ltd One-time programmable memories with low power read operation and novel sensing scheme

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5311039A (en) 1990-04-24 1994-05-10 Seiko Epson Corporation PROM and ROM memory cells
JPH0834292B2 (ja) * 1990-06-22 1996-03-29 シャープ株式会社 半導体記憶装置の書き込み方法
US5343063A (en) * 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US6154410A (en) 1997-02-05 2000-11-28 Micron Technology, Inc. Method and apparatus for reducing antifuse programming time
US6020777A (en) * 1997-09-26 2000-02-01 International Business Machines Corporation Electrically programmable anti-fuse circuit
JP4538693B2 (ja) * 1998-01-26 2010-09-08 ソニー株式会社 メモリ素子およびその製造方法
US6005800A (en) * 1998-11-23 1999-12-21 International Business Machines Corporation Magnetic memory array with paired asymmetric memory cells for improved write margin
US6541312B2 (en) * 2000-12-22 2003-04-01 Matrix Semiconductor, Inc. Formation of antifuse structure in a three dimensional memory
US6541792B1 (en) * 2001-09-14 2003-04-01 Hewlett-Packard Development Company, Llp Memory device having dual tunnel junction memory cells
US6638774B2 (en) * 2002-01-15 2003-10-28 Infineon Technologies, Ag Method of making resistive memory elements with reduced roughness
US6751149B2 (en) * 2002-03-22 2004-06-15 Micron Technology, Inc. Magnetic tunneling junction antifuse device
US6849464B2 (en) * 2002-06-10 2005-02-01 Micron Technology, Inc. Method of fabricating a multilayer dielectric tunnel barrier structure
US6870755B2 (en) * 2002-08-02 2005-03-22 Unity Semiconductor Corporation Re-writable memory with non-linear memory element
US6740957B2 (en) * 2002-08-29 2004-05-25 Micron Technology, Inc. Shallow trench antifuse and methods of making and using same
US6870751B2 (en) * 2002-11-07 2005-03-22 Hewlett-Packard Development Company, L.P. Low-energy writing in cross-point array memory devices
US6952364B2 (en) * 2003-03-03 2005-10-04 Samsung Electronics Co., Ltd. Magnetic tunnel junction structures and methods of fabrication
US6816431B1 (en) * 2003-05-28 2004-11-09 International Business Machines Corporation Magnetic random access memory using memory cells with rotated magnetic storage elements
US6841846B1 (en) * 2003-07-22 2005-01-11 Actel Corporation Antifuse structure and a method of forming an antifuse structure
US6879021B1 (en) * 2003-10-06 2005-04-12 International Business Machines Corporation Electronically programmable antifuse and circuits made therewith

Also Published As

Publication number Publication date
FR2866977A1 (fr) 2005-09-02
TW200515589A (en) 2005-05-01
US20050093092A1 (en) 2005-05-05
US7057258B2 (en) 2006-06-06

Similar Documents

Publication Publication Date Title
FR2866977B1 (fr) Dispositif de memoire resistive et son procede de fabrication
FR2849696B1 (fr) Dispositif de fabrication de specimen et procede de fabrication de specimen
FR2864706B1 (fr) Dispositif electrolumninescent organique et son procede de fabrication
FR2879800B1 (fr) Dispositif a memoire integree et procede
FR2870626B1 (fr) Dispositif de memoire magnetique et procede pour sa fabrication
FR2859043B1 (fr) Dispositif de memoire magnetique permanente et son procede de fabrication
FR2900484B3 (fr) Support de dispositif d'identification radiofrequence et son procede de fabrication
FR2836599B1 (fr) Dispositif electroluminescent organique et son procede de fabrication
FR2849960B1 (fr) Dispositif electroluminescent organique et son procede de fabrication
EP1628330A4 (fr) Procede d'exposition, dispositif d'exposition et procede de fabrication de dispositifs
FR2858112B1 (fr) Dispositif a semi conducteur, procede de fabrication du dispositif a semiconducteur et circuit integre incluant le dispositif a semiconducteur
DE60311408D1 (de) Elektrooptische Vorrichtung, Herstellungsverfahren derselben und elektronisches Gerät
DE602004022353D1 (de) Nichtflüchtige Halbleiterspeicheranordnung, diese verwendende elektronische Karte und elektronische Vorrichtung
FR2862400B1 (fr) Dispositif et procede de commande de memorisation
FR2902566B1 (fr) Dispositif d'affichage et son procede de fabrication.
SG116654A1 (en) Semiconductor device including semiconductor memory element and method for producing same.
GB2407384B (en) Humidity sensor element, device and method for manufacturing thereof
FR2889891B1 (fr) Traversee de boitier et son procede de fabrication
MA26301A1 (fr) Procede et dispositif pour la fabrication de poils
DE602004023180D1 (de) Informationsdetektionseinrichtung, -verfahren und -programm
SG121843A1 (en) Device manufacturing method, device manufactured thereby, computer program and lithographic apparatus
DE602004013472D1 (de) Datenverarbeitungsgerät, - verfahren und -programm
DE60330762D1 (de) Datenverarbeitungssystem, datenverarbeitungsverfahren, datenverarbeitungseinrichtung und datenverarbeitungsprogramm
FR2834583B1 (fr) Dispositif de memoire non volatile et procede de fabrication
DE602004009274D1 (de) Speichersteuerungsvorrichtung und Steuerungsverfahren dafür

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20110331