FR2864344B1 - Composant semiconducteur comprenant des zones a concentration de platine elevee - Google Patents
Composant semiconducteur comprenant des zones a concentration de platine eleveeInfo
- Publication number
- FR2864344B1 FR2864344B1 FR0351111A FR0351111A FR2864344B1 FR 2864344 B1 FR2864344 B1 FR 2864344B1 FR 0351111 A FR0351111 A FR 0351111A FR 0351111 A FR0351111 A FR 0351111A FR 2864344 B1 FR2864344 B1 FR 2864344B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor component
- platinum concentration
- concentration zones
- high platinum
- zones
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title 2
- 229910052697 platinum Inorganic materials 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0351111A FR2864344B1 (fr) | 2003-12-18 | 2003-12-18 | Composant semiconducteur comprenant des zones a concentration de platine elevee |
US11/014,614 US7282750B2 (en) | 2003-12-18 | 2004-12-16 | Semiconductor component comprising areas with a high platinum concentration |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0351111A FR2864344B1 (fr) | 2003-12-18 | 2003-12-18 | Composant semiconducteur comprenant des zones a concentration de platine elevee |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2864344A1 FR2864344A1 (fr) | 2005-06-24 |
FR2864344B1 true FR2864344B1 (fr) | 2006-08-11 |
Family
ID=34630585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0351111A Expired - Fee Related FR2864344B1 (fr) | 2003-12-18 | 2003-12-18 | Composant semiconducteur comprenant des zones a concentration de platine elevee |
Country Status (2)
Country | Link |
---|---|
US (1) | US7282750B2 (fr) |
FR (1) | FR2864344B1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4913336B2 (ja) * | 2004-09-28 | 2012-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2010098189A (ja) * | 2008-10-17 | 2010-04-30 | Toshiba Corp | 半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5342234B2 (fr) * | 1973-02-12 | 1978-11-09 | ||
JPS62128172A (ja) * | 1985-11-28 | 1987-06-10 | Fujitsu Ltd | 接合短絡型プログラマブルリ−ドオンリメモリ |
US4855799A (en) * | 1987-12-22 | 1989-08-08 | Kabushiki Kaisha Toshiba | Power MOS FET with carrier lifetime killer |
JPH0752777B2 (ja) * | 1988-12-22 | 1995-06-05 | 富士電機株式会社 | 高速ダイオード |
DE19958694A1 (de) * | 1999-12-06 | 2001-06-13 | Infineon Technologies Ag | Steuerbares Halbleiterschaltelement |
DE10001871A1 (de) * | 2000-01-18 | 2001-08-02 | Infineon Technologies Ag | Verfahren zur Herstellung eines steuerbaren Halbleiterschalt-elements und steuerbares Halbleiterschaltelement |
-
2003
- 2003-12-18 FR FR0351111A patent/FR2864344B1/fr not_active Expired - Fee Related
-
2004
- 2004-12-16 US US11/014,614 patent/US7282750B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR2864344A1 (fr) | 2005-06-24 |
US20050133887A1 (en) | 2005-06-23 |
US7282750B2 (en) | 2007-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20070831 |