FR2830127B1 - Commutateur monolithique bidirectionnel vertical a commande en tension - Google Patents
Commutateur monolithique bidirectionnel vertical a commande en tensionInfo
- Publication number
- FR2830127B1 FR2830127B1 FR0112197A FR0112197A FR2830127B1 FR 2830127 B1 FR2830127 B1 FR 2830127B1 FR 0112197 A FR0112197 A FR 0112197A FR 0112197 A FR0112197 A FR 0112197A FR 2830127 B1 FR2830127 B1 FR 2830127B1
- Authority
- FR
- France
- Prior art keywords
- voltage control
- vertical bidirectional
- monolithic switch
- bidirectional monolithic
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000002457 bidirectional effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0112197A FR2830127B1 (fr) | 2001-09-21 | 2001-09-21 | Commutateur monolithique bidirectionnel vertical a commande en tension |
US10/246,918 US6580100B2 (en) | 2001-09-21 | 2002-09-19 | Voltage-controlled vertical bidirectional monolithic switch |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0112197A FR2830127B1 (fr) | 2001-09-21 | 2001-09-21 | Commutateur monolithique bidirectionnel vertical a commande en tension |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2830127A1 FR2830127A1 (fr) | 2003-03-28 |
FR2830127B1 true FR2830127B1 (fr) | 2004-12-24 |
Family
ID=8867499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0112197A Expired - Fee Related FR2830127B1 (fr) | 2001-09-21 | 2001-09-21 | Commutateur monolithique bidirectionnel vertical a commande en tension |
Country Status (2)
Country | Link |
---|---|
US (1) | US6580100B2 (fr) |
FR (1) | FR2830127B1 (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040063302A1 (en) * | 2002-09-26 | 2004-04-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor substrate with defects reduced or removed and method of manufacturing the same, and semiconductor device capable of bidirectionally retaining breakdown voltage and method of manufacturing the same |
US6838321B2 (en) * | 2002-09-26 | 2005-01-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor substrate with defects reduced or removed and method of manufacturing the same, and semiconductor device capable of bidirectionally retaining breakdown voltage and method of manufacturing the same |
US7518194B2 (en) * | 2006-05-20 | 2009-04-14 | Sergey Antonov | Current amplifying integrated circuit |
US9742385B2 (en) | 2013-06-24 | 2017-08-22 | Ideal Power, Inc. | Bidirectional semiconductor switch with passive turnoff |
US9799731B2 (en) | 2013-06-24 | 2017-10-24 | Ideal Power, Inc. | Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors |
EP2901483B1 (fr) | 2013-06-24 | 2016-09-07 | Ideal Power Inc. | Systèmes, circuits, dispositifs et procédés avec transistors bipolaires bidirectionnels |
US11637016B2 (en) | 2013-12-11 | 2023-04-25 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
US9355853B2 (en) | 2013-12-11 | 2016-05-31 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
CN107371382B (zh) | 2014-11-06 | 2020-03-10 | 理想能量有限公司 | 具有双基极双极结型晶体管的优化操作的电路、方法和*** |
FR3036001A1 (fr) * | 2015-05-05 | 2016-11-11 | St Microelectronics Tours Sas | Commutateur bidirectionnel de puissance |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3982268A (en) * | 1973-10-30 | 1976-09-21 | General Electric Company | Deep diode lead throughs |
US4816892A (en) * | 1982-02-03 | 1989-03-28 | General Electric Company | Semiconductor device having turn-on and turn-off capabilities |
CA1200322A (fr) * | 1982-12-13 | 1986-02-04 | General Electric Company | Redresseur bidirectionnel a portes isolees, et son fonctionnement |
US5144401A (en) * | 1987-02-26 | 1992-09-01 | Kabushiki Kaisha Toshiba | Turn-on/off driving technique for insulated gate thyristor |
EP0394859A1 (fr) * | 1989-04-28 | 1990-10-31 | Asea Brown Boveri Ag | Dispositif semi-conducteur bidirectionnel, à extinction |
FR2712428B1 (fr) * | 1993-11-10 | 1996-02-09 | Sgs Thomson Microelectronics | Commutateur bidirectionnel à commande en tension. |
JP3352840B2 (ja) * | 1994-03-14 | 2002-12-03 | 株式会社東芝 | 逆並列接続型双方向性半導体スイッチ |
FR2751790B1 (fr) * | 1996-07-26 | 1998-11-27 | Sgs Thomson Microelectronics | Assemblage monolithique d'un transistor igbt et d'une diode rapide |
FR2787637B1 (fr) * | 1998-12-18 | 2001-03-09 | Centre Nat Rech Scient | Structure peripherique pour dispositif monolithique de puissance |
-
2001
- 2001-09-21 FR FR0112197A patent/FR2830127B1/fr not_active Expired - Fee Related
-
2002
- 2002-09-19 US US10/246,918 patent/US6580100B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20030057480A1 (en) | 2003-03-27 |
US6580100B2 (en) | 2003-06-17 |
FR2830127A1 (fr) | 2003-03-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60124184D1 (de) | Mehrseitige Fernbedienungsvorrichtung | |
DE50113481D1 (de) | Multifunktions-bedieneinrichtung | |
FR2815790B1 (fr) | Convertisseur de tension a circuit de commande autooscillant | |
DE50011982D1 (de) | Multifunktionsbedienvorrichtung | |
DE60105263D1 (de) | Betätigungsvorrichtung | |
NO20003974D0 (no) | Manøverinnretning | |
DE60128929D1 (de) | Praediktive steuerungsvorrichtung | |
DE50208025D1 (de) | Steuervorrichtung | |
DE50101513D1 (de) | Betätigungsvorrichtung | |
DE50102746D1 (de) | Betätigungsvorrichtung | |
FR2830127B1 (fr) | Commutateur monolithique bidirectionnel vertical a commande en tension | |
FR2833367B1 (fr) | Organe de commande a cables tendus | |
DE60031814D1 (de) | Schaltvorrichtung mit grosserem Steuerbereich | |
DE60123857D1 (de) | Steuerungsvorrichtung | |
FI20000558A0 (fi) | Kaukosäädin | |
DE60223457D1 (de) | Spannungsreglerssteuerschaltung | |
FR2848017B1 (fr) | Element de commande a affichage integre | |
FR2834386B1 (fr) | Interrupteur bidirectionnel commande en tension | |
DE60136412D1 (de) | Entschärfungsschalter unter Verwendung einer Halbleiterschaltvorrichtung | |
DE50211710D1 (de) | Steuerteil f r injektoren mit schaltbarer d sennadel | |
FR2838557B1 (fr) | Dispositif de telecommande pour l'actionnement d'un interrupteur | |
FR2814007B1 (fr) | Oscillateur commande en tension | |
FR2818806B1 (fr) | Commutateur electronique bidirectionnel bistable a commande par implusions | |
DE60114510D1 (de) | Schaltschrank mit doppelter Vermittlungseinrichtung | |
FR2833662B1 (fr) | Dispositif de commande a distance mono-matiere |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20090529 |