FR2807569B1 - Perfectionnement apportes aux diodes schottky - Google Patents

Perfectionnement apportes aux diodes schottky

Info

Publication number
FR2807569B1
FR2807569B1 FR0004583A FR0004583A FR2807569B1 FR 2807569 B1 FR2807569 B1 FR 2807569B1 FR 0004583 A FR0004583 A FR 0004583A FR 0004583 A FR0004583 A FR 0004583A FR 2807569 B1 FR2807569 B1 FR 2807569B1
Authority
FR
France
Prior art keywords
schottky diodes
schottky
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0004583A
Other languages
English (en)
Other versions
FR2807569A1 (fr
Inventor
Pierre Rossel
Frederic Morancho
Nathalie Cezac
Henri Tranduc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0004583A priority Critical patent/FR2807569B1/fr
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to US10/239,629 priority patent/US20040046224A1/en
Priority to AU2001250477A priority patent/AU2001250477A1/en
Priority to EP01923789A priority patent/EP1273046A2/fr
Priority to KR1020027013518A priority patent/KR20030011820A/ko
Priority to JP2001574907A priority patent/JP2003530700A/ja
Priority to PCT/FR2001/001101 priority patent/WO2001078152A2/fr
Publication of FR2807569A1 publication Critical patent/FR2807569A1/fr
Application granted granted Critical
Publication of FR2807569B1 publication Critical patent/FR2807569B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H01L29/0623—Buried supplementary region, e.g. buried guard ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
FR0004583A 2000-04-10 2000-04-10 Perfectionnement apportes aux diodes schottky Expired - Fee Related FR2807569B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0004583A FR2807569B1 (fr) 2000-04-10 2000-04-10 Perfectionnement apportes aux diodes schottky
AU2001250477A AU2001250477A1 (en) 2000-04-10 2001-04-10 Schottky-diode semiconductor device
EP01923789A EP1273046A2 (fr) 2000-04-10 2001-04-10 Dispositif semi-conducteur du type diode schottky
KR1020027013518A KR20030011820A (ko) 2000-04-10 2001-04-10 쇼트키-다이오드 타입의 반도체 디바이스
US10/239,629 US20040046224A1 (en) 2000-04-10 2001-04-10 Schottky-diode semiconductor device
JP2001574907A JP2003530700A (ja) 2000-04-10 2001-04-10 ショットキーダイオードタイプの半導体装置及びその使用方法
PCT/FR2001/001101 WO2001078152A2 (fr) 2000-04-10 2001-04-10 Dispositif semi-conducteur du type diode schottky

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0004583A FR2807569B1 (fr) 2000-04-10 2000-04-10 Perfectionnement apportes aux diodes schottky

Publications (2)

Publication Number Publication Date
FR2807569A1 FR2807569A1 (fr) 2001-10-12
FR2807569B1 true FR2807569B1 (fr) 2004-08-27

Family

ID=8849086

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0004583A Expired - Fee Related FR2807569B1 (fr) 2000-04-10 2000-04-10 Perfectionnement apportes aux diodes schottky

Country Status (7)

Country Link
US (1) US20040046224A1 (fr)
EP (1) EP1273046A2 (fr)
JP (1) JP2003530700A (fr)
KR (1) KR20030011820A (fr)
AU (1) AU2001250477A1 (fr)
FR (1) FR2807569B1 (fr)
WO (1) WO2001078152A2 (fr)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1520616A (zh) * 2001-04-11 2004-08-11 ��˹�������뵼�幫˾ 具有防止基区穿通的横向延伸基区屏蔽区的功率半导体器件及其制造方法
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7238976B1 (en) * 2004-06-15 2007-07-03 Qspeed Semiconductor Inc. Schottky barrier rectifier and method of manufacturing the same
JP4990140B2 (ja) 2004-08-31 2012-08-01 フリースケール セミコンダクター インコーポレイテッド パワー半導体デバイス
US7737522B2 (en) * 2005-02-11 2010-06-15 Alpha & Omega Semiconductor, Ltd. Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction
US7671439B2 (en) * 2005-02-11 2010-03-02 Alpha & Omega Semiconductor, Ltd. Junction barrier Schottky (JBS) with floating islands
DE102005046706B4 (de) 2005-09-29 2007-07-05 Siced Electronics Development Gmbh & Co. Kg JBS-SiC-Halbleiterbauelement
JP5351519B2 (ja) * 2005-12-27 2013-11-27 パワー・インテグレーションズ・インコーポレーテッド 高速回復整流器構造体の装置および方法
US7633135B2 (en) * 2007-07-22 2009-12-15 Alpha & Omega Semiconductor, Ltd. Bottom anode Schottky diode structure and method
US7560355B2 (en) * 2006-10-24 2009-07-14 Vishay General Semiconductor Llc Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same
DE102007009227B4 (de) * 2007-02-26 2009-01-02 Infineon Technologies Ag Halbleiterbauelement mit gleichrichtenden Übergängen sowie Herstellungsverfahren zur Herstellung desselben
US7750426B2 (en) 2007-05-30 2010-07-06 Intersil Americas, Inc. Junction barrier Schottky diode with dual silicides
TW200847448A (en) * 2007-05-30 2008-12-01 Intersil Inc Junction barrier schottky diode
US8368166B2 (en) * 2007-05-30 2013-02-05 Intersil Americas Inc. Junction barrier Schottky diode
JP2007311822A (ja) * 2007-07-23 2007-11-29 Toshiba Corp ショットキーバリヤダイオード
JP2009076866A (ja) * 2007-08-31 2009-04-09 Sumitomo Electric Ind Ltd ショットキーバリアダイオード
US9102962B2 (en) * 2007-10-16 2015-08-11 Shiu Nan Chen Production method for solid cultured active mushroom mycelium and fruit-body metabolites (AMFM) products thereof
US8212327B2 (en) * 2008-03-06 2012-07-03 Sionyx, Inc. High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme
US7851881B1 (en) * 2008-03-21 2010-12-14 Microsemi Corporation Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode
US8106487B2 (en) * 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
EP2583312A2 (fr) 2010-06-18 2013-04-24 Sionyx, Inc. Dispositifs photosensibles à grande vitesse et procédés associés
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
JP2014525091A (ja) 2011-07-13 2014-09-25 サイオニクス、インク． 生体撮像装置および関連方法
US8362585B1 (en) 2011-07-15 2013-01-29 Alpha & Omega Semiconductor, Inc. Junction barrier Schottky diode with enforced upper contact structure and method for robust packaging
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP6466346B2 (ja) 2013-02-15 2019-02-06 サイオニクス、エルエルシー アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
JP2014236171A (ja) * 2013-06-05 2014-12-15 ローム株式会社 半導体装置およびその製造方法
WO2014209421A1 (fr) 2013-06-29 2014-12-31 Sionyx, Inc. Régions texturées formées de tranchées peu profondes et procédés associés.
US9070790B2 (en) * 2013-08-29 2015-06-30 Infineon Technologies Ag Vertical semiconductor device and method of manufacturing thereof
US9704949B1 (en) * 2016-06-30 2017-07-11 General Electric Company Active area designs for charge-balanced diodes
CN116093164B (zh) * 2023-04-07 2023-07-11 深圳市晶扬电子有限公司 一种带有浮岛型保护环的高压肖特基二极管

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837227B1 (fr) * 1968-12-20 1973-11-09
GB1558506A (en) * 1976-08-09 1980-01-03 Mullard Ltd Semiconductor devices having a rectifying metalto-semicondductor junction
JPH06275816A (ja) * 1993-03-18 1994-09-30 Shindengen Electric Mfg Co Ltd ショットキバリヤダイオ−ド
EP0745273B1 (fr) * 1994-12-20 1998-10-28 Koninklijke Philips Electronics N.V. Agencement de circuit et transistor a effet de champ de jonction utilisable dans ledit agencement
US6037632A (en) * 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
JPH10117003A (ja) * 1996-10-14 1998-05-06 Hitachi Ltd 定電圧ダイオード及びその製造方法
JP2002503401A (ja) * 1998-04-08 2002-01-29 シーメンス アクチエンゲゼルシヤフト プレーナ構造用の高耐圧コーナー部シール体
DE19943143B4 (de) * 1999-09-09 2008-04-24 Infineon Technologies Ag Halbleiterbauelement für hohe Sperrspannungen bei gleichzeitig niedrigem Einschaltwiderstand und Verfahren zu dessen Herstellung
DE10061528C1 (de) * 2000-12-11 2002-07-25 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterbauelement

Also Published As

Publication number Publication date
KR20030011820A (ko) 2003-02-11
AU2001250477A1 (en) 2001-10-23
JP2003530700A (ja) 2003-10-14
US20040046224A1 (en) 2004-03-11
FR2807569A1 (fr) 2001-10-12
WO2001078152A2 (fr) 2001-10-18
WO2001078152A3 (fr) 2002-02-07
EP1273046A2 (fr) 2003-01-08

Similar Documents

Publication Publication Date Title
FR2807569B1 (fr) Perfectionnement apportes aux diodes schottky
DE60142211D1 (de) Graben - schottkygleichrichter
DE50107556D1 (de) Graphem-Phonem-Konvertierung
DE60101991D1 (de) Gleichstrom- zu Gleichstromumwandler
FI20001055A (fi) Avoauto
DE60118217D1 (de) Schottky-gleichrichter mit graben
DE60134817D1 (de) Isolierter Konverter
DE60140691D1 (de) Halbleiterdiodenbauelement
FR2812476B1 (fr) Convertisseur alternatif-continu
DE60322991D1 (de) Diodeanordnung
DE60124963D1 (de) Befestigungsmittel
DE50114882D1 (de) Schutzanordnung für schottky-diode
DE10194410T1 (de) Ventilplatte-Schaft-Verbindung
ID29755A (id) Senyawa-senyawa organosilikon
NO20021944L (no) Slepebåt
DE60330203D1 (de) Direktumsetzempfänger
DE50115538D1 (de) Gleichrichteranordnung
DE60317285D1 (de) Fotoelektrische Umwandlungsvorrichtung
TR200100070A3 (tr) Bilesim
DE50103720D1 (de) Befestigungselement
DE60213622D1 (de) Abwärtswandler
DE60103797D1 (de) Befestigungselement
DE50111882D1 (de) Verdeck
DE60111789D1 (de) Verbesserungen an Werkzeugen
EE00205U1 (et) Schottky diood

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20051230