DE60142211D1 - Graben - schottkygleichrichter - Google Patents
Graben - schottkygleichrichterInfo
- Publication number
- DE60142211D1 DE60142211D1 DE60142211T DE60142211T DE60142211D1 DE 60142211 D1 DE60142211 D1 DE 60142211D1 DE 60142211 T DE60142211 T DE 60142211T DE 60142211 T DE60142211 T DE 60142211T DE 60142211 D1 DE60142211 D1 DE 60142211D1
- Authority
- DE
- Germany
- Prior art keywords
- scottky
- rectifier
- triangle
- scottky rectifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0002235.0A GB0002235D0 (en) | 2000-02-02 | 2000-02-02 | Trenched schottky rectifiers |
| PCT/EP2001/000657 WO2001057915A2 (en) | 2000-02-02 | 2001-01-22 | Trenched schottky rectifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60142211D1 true DE60142211D1 (de) | 2010-07-08 |
Family
ID=9884704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60142211T Expired - Lifetime DE60142211D1 (de) | 2000-02-02 | 2001-01-22 | Graben - schottkygleichrichter |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6441454B2 (de) |
| EP (1) | EP1188189B1 (de) |
| JP (1) | JP2003522413A (de) |
| DE (1) | DE60142211D1 (de) |
| GB (1) | GB0002235D0 (de) |
| WO (1) | WO2001057915A2 (de) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7745289B2 (en) | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
| US6396090B1 (en) * | 2000-09-22 | 2002-05-28 | Industrial Technology Research Institute | Trench MOS device and termination structure |
| US6309929B1 (en) * | 2000-09-22 | 2001-10-30 | Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. | Method of forming trench MOS device and termination structure |
| US6710403B2 (en) | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
| US6818513B2 (en) | 2001-01-30 | 2004-11-16 | Fairchild Semiconductor Corporation | Method of forming a field effect transistor having a lateral depletion structure |
| US6803626B2 (en) | 2002-07-18 | 2004-10-12 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device |
| US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
| US6740951B2 (en) * | 2001-05-22 | 2004-05-25 | General Semiconductor, Inc. | Two-mask trench schottky diode |
| DE10127885B4 (de) * | 2001-06-08 | 2009-09-24 | Infineon Technologies Ag | Trench-Leistungshalbleiterbauelement |
| GB0129450D0 (en) * | 2001-12-08 | 2002-01-30 | Koninkl Philips Electronics Nv | Trenched semiconductor devices and their manufacture |
| EP1497148B2 (de) * | 2002-04-12 | 2011-10-05 | Edscha Cabrio-Dachsysteme GmbH | Verdeck für ein cabriolet-fahrzeug |
| US6855593B2 (en) * | 2002-07-11 | 2005-02-15 | International Rectifier Corporation | Trench Schottky barrier diode |
| US7323402B2 (en) * | 2002-07-11 | 2008-01-29 | International Rectifier Corporation | Trench Schottky barrier diode with differential oxide thickness |
| US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
| US6710418B1 (en) * | 2002-10-11 | 2004-03-23 | Fairchild Semiconductor Corporation | Schottky rectifier with insulation-filled trenches and method of forming the same |
| US7652326B2 (en) | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US6987305B2 (en) * | 2003-08-04 | 2006-01-17 | International Rectifier Corporation | Integrated FET and schottky device |
| US7973381B2 (en) * | 2003-09-08 | 2011-07-05 | International Rectifier Corporation | Thick field oxide termination for trench schottky device |
| KR100994719B1 (ko) | 2003-11-28 | 2010-11-16 | 페어차일드코리아반도체 주식회사 | 슈퍼정션 반도체장치 |
| US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
| US6977208B2 (en) * | 2004-01-27 | 2005-12-20 | International Rectifier Corporation | Schottky with thick trench bottom and termination oxide and process for manufacture |
| US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
| CN101882583A (zh) | 2005-04-06 | 2010-11-10 | 飞兆半导体公司 | 沟栅场效应晶体管及其形成方法 |
| US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
| JP2008034572A (ja) * | 2006-07-28 | 2008-02-14 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法 |
| US7750398B2 (en) * | 2006-09-26 | 2010-07-06 | Force-Mos Technology Corporation | Trench MOSFET with trench termination and manufacture thereof |
| US8928077B2 (en) | 2007-09-21 | 2015-01-06 | Fairchild Semiconductor Corporation | Superjunction structures for power devices |
| US7772668B2 (en) | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
| JP2009253122A (ja) * | 2008-04-09 | 2009-10-29 | Nippon Telegr & Teleph Corp <Ntt> | 整流素子 |
| WO2010001338A1 (en) * | 2008-07-01 | 2010-01-07 | Nxp B.V. | Manufacture of semiconductor devices |
| US20120273916A1 (en) | 2011-04-27 | 2012-11-01 | Yedinak Joseph A | Superjunction Structures for Power Devices and Methods of Manufacture |
| JP5566020B2 (ja) * | 2008-12-22 | 2014-08-06 | 新電元工業株式会社 | トレンチショットキバリアダイオードの製造方法 |
| US8432000B2 (en) | 2010-06-18 | 2013-04-30 | Fairchild Semiconductor Corporation | Trench MOS barrier schottky rectifier with a planar surface using CMP techniques |
| JP5450493B2 (ja) * | 2011-03-25 | 2014-03-26 | 株式会社東芝 | 半導体装置 |
| US8786010B2 (en) | 2011-04-27 | 2014-07-22 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8673700B2 (en) | 2011-04-27 | 2014-03-18 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8836028B2 (en) | 2011-04-27 | 2014-09-16 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8772868B2 (en) | 2011-04-27 | 2014-07-08 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8872278B2 (en) | 2011-10-25 | 2014-10-28 | Fairchild Semiconductor Corporation | Integrated gate runner and field implant termination for trench devices |
| TWI503891B (zh) * | 2011-12-06 | 2015-10-11 | Tzu Hsiung Chen | 溝渠式蕭基二極體及其製作方法 |
| TWM439885U (en) | 2012-04-13 | 2012-10-21 | Taiwan Semiconductor Co Ltd | Semiconductor component trench structure |
| TWM435716U (en) * | 2012-04-13 | 2012-08-11 | Taiwan Semiconductor Co Ltd | The active region of the trench distributed arrangement of the semiconductor device structure |
| CN103426910B (zh) * | 2012-05-24 | 2016-01-20 | 杰力科技股份有限公司 | 功率半导体元件及其边缘终端结构 |
| TWI521693B (zh) * | 2012-11-27 | 2016-02-11 | 財團法人工業技術研究院 | 蕭基能障二極體及其製造方法 |
| EP2945192A1 (de) | 2014-05-14 | 2015-11-18 | Nxp B.V. | Halbleiterbauelement und zugehöriges Herstellungsverfahren |
| US10431699B2 (en) | 2015-03-06 | 2019-10-01 | Semiconductor Components Industries, Llc | Trench semiconductor device having multiple active trench depths and method |
| US9716187B2 (en) | 2015-03-06 | 2017-07-25 | Semiconductor Components Industries, Llc | Trench semiconductor device having multiple trench depths and method |
| JP6185504B2 (ja) * | 2015-03-24 | 2017-08-23 | 京セラ株式会社 | 半導体装置 |
| JP2017028150A (ja) * | 2015-07-24 | 2017-02-02 | サンケン電気株式会社 | 半導体装置 |
| KR102249592B1 (ko) * | 2015-12-02 | 2021-05-07 | 현대자동차 주식회사 | 쇼트키 배리어 다이오드 및 그 제조 방법 |
| CN105576045B (zh) * | 2016-01-28 | 2018-04-17 | 杭州立昂微电子股份有限公司 | 一种沟槽肖特基势垒二极管及其制造方法 |
| CN107731933A (zh) * | 2016-08-13 | 2018-02-23 | 朱江 | 一种沟槽终端肖特基器件 |
| US10388801B1 (en) * | 2018-01-30 | 2019-08-20 | Semiconductor Components Industries, Llc | Trench semiconductor device having shaped gate dielectric and gate electrode structures and method |
| CN108493258A (zh) * | 2018-05-28 | 2018-09-04 | 江苏捷捷微电子股份有限公司 | 一种超低正向压降的Trench肖特基器件及制造方法 |
| US10439075B1 (en) | 2018-06-27 | 2019-10-08 | Semiconductor Components Industries, Llc | Termination structure for insulated gate semiconductor device and method |
| US10566466B2 (en) | 2018-06-27 | 2020-02-18 | Semiconductor Components Industries, Llc | Termination structure for insulated gate semiconductor device and method |
| JP6626929B1 (ja) | 2018-06-29 | 2019-12-25 | 京セラ株式会社 | 半導体デバイス及び電気装置 |
| US11894468B2 (en) * | 2018-11-06 | 2024-02-06 | Cornell University | High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and methods of fabricating same |
| CN113054039A (zh) * | 2020-11-27 | 2021-06-29 | 龙腾半导体股份有限公司 | 基于元胞结构的沟槽型肖特基二极管器件结构及制造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2151844A (en) | 1983-12-20 | 1985-07-24 | Philips Electronic Associated | Semiconductor devices |
| US4982260A (en) * | 1989-10-02 | 1991-01-01 | General Electric Company | Power rectifier with trenches |
| US5262669A (en) * | 1991-04-19 | 1993-11-16 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor rectifier having high breakdown voltage and high speed operation |
| US5326711A (en) * | 1993-01-04 | 1994-07-05 | Texas Instruments Incorporated | High performance high voltage vertical transistor and method of fabrication |
| US5365102A (en) * | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
| US5679966A (en) * | 1995-10-05 | 1997-10-21 | North Carolina State University | Depleted base transistor with high forward voltage blocking capability |
| US5949124A (en) * | 1995-10-31 | 1999-09-07 | Motorola, Inc. | Edge termination structure |
| US5612567A (en) | 1996-05-13 | 1997-03-18 | North Carolina State University | Schottky barrier rectifiers and methods of forming same |
| US5998833A (en) | 1998-10-26 | 1999-12-07 | North Carolina State University | Power semiconductor devices having improved high frequency switching and breakdown characteristics |
| US6191447B1 (en) * | 1999-05-28 | 2001-02-20 | Micro-Ohm Corporation | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
| US6309929B1 (en) * | 2000-09-22 | 2001-10-30 | Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. | Method of forming trench MOS device and termination structure |
-
2000
- 2000-02-02 GB GBGB0002235.0A patent/GB0002235D0/en not_active Ceased
-
2001
- 2001-01-22 WO PCT/EP2001/000657 patent/WO2001057915A2/en active Application Filing
- 2001-01-22 EP EP01903665A patent/EP1188189B1/de not_active Expired - Lifetime
- 2001-01-22 DE DE60142211T patent/DE60142211D1/de not_active Expired - Lifetime
- 2001-01-22 JP JP2001557078A patent/JP2003522413A/ja not_active Withdrawn
- 2001-02-01 US US09/773,412 patent/US6441454B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1188189A2 (de) | 2002-03-20 |
| US6441454B2 (en) | 2002-08-27 |
| US20010010385A1 (en) | 2001-08-02 |
| JP2003522413A (ja) | 2003-07-22 |
| EP1188189B1 (de) | 2010-05-26 |
| WO2001057915A3 (en) | 2001-12-20 |
| WO2001057915A2 (en) | 2001-08-09 |
| GB0002235D0 (en) | 2000-03-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |