FR2755539B1 - Procede de fabrication d'un dispositif a semi-conducteur du type encapsule dans une resine et systeme de matrices pour ce procede - Google Patents

Procede de fabrication d'un dispositif a semi-conducteur du type encapsule dans une resine et systeme de matrices pour ce procede

Info

Publication number
FR2755539B1
FR2755539B1 FR9712718A FR9712718A FR2755539B1 FR 2755539 B1 FR2755539 B1 FR 2755539B1 FR 9712718 A FR9712718 A FR 9712718A FR 9712718 A FR9712718 A FR 9712718A FR 2755539 B1 FR2755539 B1 FR 2755539B1
Authority
FR
France
Prior art keywords
resin
manufacturing
semiconductor device
die system
encapsulated type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9712718A
Other languages
English (en)
Other versions
FR2755539A1 (fr
Inventor
Kan Kinouchi
Yukihiro Kato
Hiroshi Nomura
Michitake Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of FR2755539A1 publication Critical patent/FR2755539A1/fr
Application granted granted Critical
Publication of FR2755539B1 publication Critical patent/FR2755539B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2924/01014—Silicon [Si]
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    • H01L2924/01028—Nickel [Ni]
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    • H01L2924/01068—Erbium [Er]
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    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
FR9712718A 1996-10-11 1997-10-10 Procede de fabrication d'un dispositif a semi-conducteur du type encapsule dans une resine et systeme de matrices pour ce procede Expired - Fee Related FR2755539B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26998996A JP4118353B2 (ja) 1996-10-11 1996-10-11 樹脂封止型半導体装置の製造方法およびモールド金型

Publications (2)

Publication Number Publication Date
FR2755539A1 FR2755539A1 (fr) 1998-05-07
FR2755539B1 true FR2755539B1 (fr) 2003-08-15

Family

ID=17480022

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9712718A Expired - Fee Related FR2755539B1 (fr) 1996-10-11 1997-10-10 Procede de fabrication d'un dispositif a semi-conducteur du type encapsule dans une resine et systeme de matrices pour ce procede

Country Status (4)

Country Link
US (1) US6172424B1 (fr)
JP (1) JP4118353B2 (fr)
DE (1) DE19745243B4 (fr)
FR (1) FR2755539B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001227902A (ja) * 2000-02-16 2001-08-24 Mitsubishi Electric Corp 半導体装置
US7129158B2 (en) 2001-09-28 2006-10-31 Ibiden Co., Ltd. Printed wiring board and production method for printed wiring board
JP2004297014A (ja) * 2003-03-28 2004-10-21 Denso Corp 半導体装置のワイヤボンディング方法及び半導体装置
US8541263B1 (en) * 2008-08-22 2013-09-24 Altera Corporation Thermoset molding for on-package decoupling in flip chips
US8264074B2 (en) * 2010-09-10 2012-09-11 General Electric Company Device for use as dual-sided sensor package
JP6011277B2 (ja) * 2012-06-14 2016-10-19 株式会社デンソー 半導体装置の製造方法
JP6218724B2 (ja) * 2014-12-08 2017-10-25 アルプス電気株式会社 センサーモジュールおよびその製造方法
DE102015100025A1 (de) 2015-01-05 2016-07-07 Osram Opto Semiconductors Gmbh Leiterrahmen

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3754070A (en) 1970-08-03 1973-08-21 Motorola Inc Flash free molding
JPS5480079A (en) * 1978-08-07 1979-06-26 Dai Ichi Seiko Co Ltd Method of forming semiconductor seal
JPS597008A (ja) * 1982-07-03 1984-01-14 Toshiba Corp 高密度タブレツトおよびそれを使用した半導体樹脂封止方法
JPS60257546A (ja) * 1984-06-04 1985-12-19 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPS61271859A (ja) 1985-05-27 1986-12-02 Oki Electric Ind Co Ltd Ｅｐｒｏｍ半導体装置
US4850227A (en) 1987-12-22 1989-07-25 Delco Electronics Corporation Pressure sensor and method of fabrication thereof
US5264393A (en) * 1988-11-25 1993-11-23 Fuji Photo Film Co., Ltd. Solid state image pickup device and method of manufacturing the same
JPH02165643A (ja) * 1988-12-20 1990-06-26 Hitachi Chem Co Ltd 半導体の樹脂封止用金型
JP2596615B2 (ja) 1989-02-08 1997-04-02 沖電気工業株式会社 樹脂封止用回路基板
JP2668727B2 (ja) * 1989-02-23 1997-10-27 三井石油化学工業株式会社 箱型樹脂成形体成形用金型およびこの金型を用いた半導体装置の製造方法
JPH05203522A (ja) * 1992-01-23 1993-08-10 Mitsubishi Electric Corp モールドパッケージ半導体圧力センサおよびその製造方法
JP2843464B2 (ja) * 1992-09-01 1999-01-06 シャープ株式会社 固体撮像装置
US5328552A (en) 1993-03-30 1994-07-12 At&T Bell Laboratories Leadframe processing for molded package arrangements
JP3362530B2 (ja) * 1993-12-16 2003-01-07 セイコーエプソン株式会社 樹脂封止型半導体装置およびその製造方法
JPH0823062A (ja) * 1994-07-06 1996-01-23 Toshiba Corp 樹脂封止型半導体装置の製造方法

Also Published As

Publication number Publication date
JPH10116846A (ja) 1998-05-06
FR2755539A1 (fr) 1998-05-07
DE19745243B4 (de) 2007-10-04
US6172424B1 (en) 2001-01-09
JP4118353B2 (ja) 2008-07-16
DE19745243A1 (de) 1998-04-16

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Effective date: 20150630