FR2744836B1 - Substrat epitaxial a concentration progressive pour dispositif a semi-conducteurs a diffusion par resurf - Google Patents
Substrat epitaxial a concentration progressive pour dispositif a semi-conducteurs a diffusion par resurfInfo
- Publication number
- FR2744836B1 FR2744836B1 FR9700467A FR9700467A FR2744836B1 FR 2744836 B1 FR2744836 B1 FR 2744836B1 FR 9700467 A FR9700467 A FR 9700467A FR 9700467 A FR9700467 A FR 9700467A FR 2744836 B1 FR2744836 B1 FR 2744836B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- epitaxial substrate
- concentration epitaxial
- progressive concentration
- diffusion semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009792 diffusion process Methods 0.000 title 1
- 230000000750 progressive effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
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- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1016296P | 1996-01-18 | 1996-01-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2744836A1 FR2744836A1 (fr) | 1997-08-14 |
FR2744836B1 true FR2744836B1 (fr) | 1999-03-19 |
Family
ID=21744241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9700467A Expired - Fee Related FR2744836B1 (fr) | 1996-01-18 | 1997-01-17 | Substrat epitaxial a concentration progressive pour dispositif a semi-conducteurs a diffusion par resurf |
Country Status (7)
Country | Link |
---|---|
US (2) | US5861657A (fr) |
JP (1) | JP2968222B2 (fr) |
DE (1) | DE19701189B4 (fr) |
FR (1) | FR2744836B1 (fr) |
GB (1) | GB2309589B (fr) |
IT (1) | IT1289920B1 (fr) |
SG (1) | SG55267A1 (fr) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19811604B4 (de) * | 1997-03-18 | 2007-07-12 | Kabushiki Kaisha Toshiba, Kawasaki | Halbleitervorrichtung |
US6274918B1 (en) * | 1998-02-19 | 2001-08-14 | Texas Instruments Incorporated | Integrated circuit diode, and method for fabricating same |
JP3591301B2 (ja) * | 1998-05-07 | 2004-11-17 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
JP2000031301A (ja) * | 1998-07-13 | 2000-01-28 | Mitsubishi Electric Corp | 半導体装置 |
DE19857673C1 (de) * | 1998-12-14 | 2000-05-04 | Siemens Ag | Leistungshalbleiterbauelement mit Randabschluß |
US6313482B1 (en) | 1999-05-17 | 2001-11-06 | North Carolina State University | Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein |
US6593594B1 (en) * | 1999-12-21 | 2003-07-15 | Koninklijke Philips Electonics N.V. | Silicon carbide n-channel power LMOSFET |
US6236100B1 (en) * | 2000-01-28 | 2001-05-22 | General Electronics Applications, Inc. | Semiconductor with high-voltage components and low-voltage components on a shared die |
JP2002026328A (ja) * | 2000-07-04 | 2002-01-25 | Toshiba Corp | 横型半導体装置 |
US6825543B2 (en) | 2000-12-28 | 2004-11-30 | Canon Kabushiki Kaisha | Semiconductor device, method for manufacturing the same, and liquid jet apparatus |
KR100535062B1 (ko) * | 2001-06-04 | 2005-12-07 | 마츠시타 덴끼 산교 가부시키가이샤 | 고내압 반도체장치 |
US6787872B2 (en) * | 2001-06-26 | 2004-09-07 | International Rectifier Corporation | Lateral conduction superjunction semiconductor device |
US20030001216A1 (en) * | 2001-06-27 | 2003-01-02 | Motorola, Inc. | Semiconductor component and method of manufacturing |
US6797992B2 (en) * | 2001-08-07 | 2004-09-28 | Fabtech, Inc. | Apparatus and method for fabricating a high reverse voltage semiconductor device |
EP1482560A4 (fr) * | 2002-03-01 | 2008-02-27 | Sanken Electric Co Ltd | Dispositif semi-conducteur |
TWI287873B (en) | 2002-04-25 | 2007-10-01 | Sanken Electric Co Ltd | Semiconductor element and manufacturing method thereof |
JP4272854B2 (ja) * | 2002-07-10 | 2009-06-03 | キヤノン株式会社 | 半導体装置及びそれを用いた液体吐出装置 |
JP4298414B2 (ja) * | 2002-07-10 | 2009-07-22 | キヤノン株式会社 | 液体吐出ヘッドの製造方法 |
US20040201078A1 (en) * | 2003-04-11 | 2004-10-14 | Liping Ren | Field plate structure for high voltage devices |
JP2005093696A (ja) * | 2003-09-17 | 2005-04-07 | Matsushita Electric Ind Co Ltd | 横型mosトランジスタ |
DE10393627T5 (de) * | 2003-09-18 | 2005-10-13 | Shindengen Electric Mfg. Co. Ltd. | Lateraler Kurzkanal-dmos, Verfahren zur Herstellung desselben und Halbleiterbauelement |
US7067883B2 (en) * | 2003-10-31 | 2006-06-27 | Lattice Semiconductor Corporation | Lateral high-voltage junction device |
US7307319B1 (en) | 2004-04-30 | 2007-12-11 | Lattice Semiconductor Corporation | High-voltage protection device and process |
US7180152B2 (en) * | 2004-07-08 | 2007-02-20 | International Rectifier Corporation | Process for resurf diffusion for high voltage MOSFET |
US7466006B2 (en) * | 2005-05-19 | 2008-12-16 | Freescale Semiconductor, Inc. | Structure and method for RESURF diodes with a current diverter |
US7439584B2 (en) * | 2005-05-19 | 2008-10-21 | Freescale Semiconductor, Inc. | Structure and method for RESURF LDMOSFET with a current diverter |
US8618627B2 (en) | 2010-06-24 | 2013-12-31 | Fairchild Semiconductor Corporation | Shielded level shift transistor |
US8664720B2 (en) | 2010-08-25 | 2014-03-04 | Infineon Technologies Ag | High voltage semiconductor devices |
JP6028402B2 (ja) * | 2012-06-07 | 2016-11-16 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP6740831B2 (ja) * | 2016-09-14 | 2020-08-19 | 富士電機株式会社 | 半導体装置 |
RU2650814C1 (ru) * | 2016-12-29 | 2018-04-17 | Акционерное общество "Научно-производственное предприятие "Пульсар" | Структура кристалла высоковольтного полупроводникового прибора, высоковольтной интегральной микросхемы (варианты) |
CN107342286B (zh) * | 2017-06-23 | 2020-05-12 | 电子科技大学 | 一种具有表面双栅控制的横向rc-igbt器件 |
US11581402B2 (en) * | 2018-09-05 | 2023-02-14 | Board Of Regents, The University Of Texas System | Lateral semiconductor device and method of manufacture |
RU204806U1 (ru) * | 2021-03-30 | 2021-06-11 | Акционерное общество "Московский завод "САПФИР" | Стойкий к коротковолновому облучению одно- или многоплощадочный планарный фотодиодный кристалл из антимонида индия |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US3518494A (en) * | 1964-06-29 | 1970-06-30 | Signetics Corp | Radiation resistant semiconductor device and method |
US4111720A (en) * | 1977-03-31 | 1978-09-05 | International Business Machines Corporation | Method for forming a non-epitaxial bipolar integrated circuit |
NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
US4399449A (en) * | 1980-11-17 | 1983-08-16 | International Rectifier Corporation | Composite metal and polysilicon field plate structure for high voltage semiconductor devices |
NL8103218A (nl) * | 1981-07-06 | 1983-02-01 | Philips Nv | Veldeffekttransistor met geisoleerde stuurelektrode. |
US4485392A (en) * | 1981-12-28 | 1984-11-27 | North American Philips Corporation | Lateral junction field effect transistor device |
JPH0793282B2 (ja) * | 1985-04-15 | 1995-10-09 | 株式会社日立製作所 | 半導体装置の製造方法 |
US4866495A (en) * | 1987-05-27 | 1989-09-12 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
JPH06163907A (ja) * | 1992-11-20 | 1994-06-10 | Hitachi Ltd | 電圧駆動型半導体装置 |
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1997
- 1997-01-15 DE DE19701189A patent/DE19701189B4/de not_active Expired - Lifetime
- 1997-01-15 US US08/783,667 patent/US5861657A/en not_active Expired - Lifetime
- 1997-01-17 IT IT97MI000094A patent/IT1289920B1/it active IP Right Grant
- 1997-01-17 FR FR9700467A patent/FR2744836B1/fr not_active Expired - Fee Related
- 1997-01-17 SG SG1997000115A patent/SG55267A1/en unknown
- 1997-01-17 JP JP9006235A patent/JP2968222B2/ja not_active Expired - Lifetime
- 1997-01-20 GB GB9701069A patent/GB2309589B/en not_active Expired - Lifetime
- 1997-02-20 US US08/803,071 patent/US5801431A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5801431A (en) | 1998-09-01 |
IT1289920B1 (it) | 1998-10-19 |
JPH09307110A (ja) | 1997-11-28 |
GB2309589A (en) | 1997-07-30 |
GB9701069D0 (en) | 1997-03-12 |
US5861657A (en) | 1999-01-19 |
DE19701189B4 (de) | 2005-06-30 |
FR2744836A1 (fr) | 1997-08-14 |
ITMI970094A1 (it) | 1998-07-17 |
SG55267A1 (en) | 1998-12-21 |
DE19701189A1 (de) | 1997-10-30 |
JP2968222B2 (ja) | 1999-10-25 |
GB2309589B (en) | 2001-01-03 |
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