FR2742578B1 - Cathode a emission de champ et son procede de fabrication - Google Patents

Cathode a emission de champ et son procede de fabrication

Info

Publication number
FR2742578B1
FR2742578B1 FR9615319A FR9615319A FR2742578B1 FR 2742578 B1 FR2742578 B1 FR 2742578B1 FR 9615319 A FR9615319 A FR 9615319A FR 9615319 A FR9615319 A FR 9615319A FR 2742578 B1 FR2742578 B1 FR 2742578B1
Authority
FR
France
Prior art keywords
manufacturing
field emission
emission cathode
cathode
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9615319A
Other languages
English (en)
Other versions
FR2742578A1 (fr
Inventor
Shigeo Itoh
Teruo Watanabe
Kazuyoshi Ohtsu
Masateru Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Futaba Corp
Original Assignee
Futaba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Futaba Corp filed Critical Futaba Corp
Publication of FR2742578A1 publication Critical patent/FR2742578A1/fr
Application granted granted Critical
Publication of FR2742578B1 publication Critical patent/FR2742578B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cold Cathode And The Manufacture (AREA)
FR9615319A 1995-12-13 1996-12-13 Cathode a emission de champ et son procede de fabrication Expired - Fee Related FR2742578B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34627395A JP3060928B2 (ja) 1995-12-13 1995-12-13 電界放出カソードとその製造方法

Publications (2)

Publication Number Publication Date
FR2742578A1 FR2742578A1 (fr) 1997-06-20
FR2742578B1 true FR2742578B1 (fr) 2003-09-19

Family

ID=18382293

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9615319A Expired - Fee Related FR2742578B1 (fr) 1995-12-13 1996-12-13 Cathode a emission de champ et son procede de fabrication

Country Status (5)

Country Link
US (1) US5834885A (fr)
JP (1) JP3060928B2 (fr)
KR (1) KR100243990B1 (fr)
FR (1) FR2742578B1 (fr)
TW (1) TW315478B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6015323A (en) * 1997-01-03 2000-01-18 Micron Technology, Inc. Field emission display cathode assembly government rights
JP4108790B2 (ja) * 1997-07-23 2008-06-25 浜松ホトニクス株式会社 ガラス部材の接合方法
US6465941B1 (en) * 1998-12-07 2002-10-15 Sony Corporation Cold cathode field emission device and display
JP3595718B2 (ja) * 1999-03-15 2004-12-02 株式会社東芝 表示素子およびその製造方法
US6611093B1 (en) 2000-09-19 2003-08-26 Display Research Laboratories, Inc. Field emission display with transparent cathode
KR100741898B1 (ko) * 2000-12-22 2007-07-24 엘지.필립스 엘시디 주식회사 평판형 형광램프 및 그 제조방법
US6649431B2 (en) * 2001-02-27 2003-11-18 Ut. Battelle, Llc Carbon tips with expanded bases grown with simultaneous application of carbon source and etchant gases
CN100454479C (zh) * 2004-09-22 2009-01-21 鸿富锦精密工业（深圳）有限公司 场发射照明光源
US8946739B2 (en) * 2005-09-30 2015-02-03 Lateral Research Limited Liability Company Process to fabricate integrated MWIR emitter
US20080315101A1 (en) * 2007-06-20 2008-12-25 Chien-Min Sung Diamond-like carbon infrared detector and associated methods
KR20110030702A (ko) 2008-07-25 2011-03-23 히다치 막셀 가부시키가이샤 구동장치, 화상취득장치 및 전자기기
US8866068B2 (en) 2012-12-27 2014-10-21 Schlumberger Technology Corporation Ion source with cathode having an array of nano-sized projections

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2634295B2 (ja) * 1990-05-17 1997-07-23 双葉電子工業株式会社 電子放出素子
JP2613669B2 (ja) * 1990-09-27 1997-05-28 工業技術院長 電界放出素子及びその製造方法
JP2656851B2 (ja) * 1990-09-27 1997-09-24 工業技術院長 画像表示装置
JP2719239B2 (ja) * 1991-02-08 1998-02-25 工業技術院長 電界放出素子
JP3116398B2 (ja) * 1991-03-13 2000-12-11 ソニー株式会社 平面型電子放出素子の製造方法及び平面型電子放出素子
JP2661457B2 (ja) * 1992-03-31 1997-10-08 双葉電子工業株式会社 電界放出形カソード
JPH0823069B2 (ja) * 1992-06-25 1996-03-06 双葉電子工業株式会社 粉体攪拌器
US5584739A (en) * 1993-02-10 1996-12-17 Futaba Denshi Kogyo K.K Field emission element and process for manufacturing same
JP3223650B2 (ja) * 1993-06-25 2001-10-29 双葉電子工業株式会社 電界放出カソード
JP2699827B2 (ja) * 1993-09-27 1998-01-19 双葉電子工業株式会社 電界放出カソード素子
KR100201362B1 (ko) * 1993-12-20 1999-06-15 호소야 레이지 전계방출소자를 이용한 표시장치
JP2713132B2 (ja) * 1993-12-22 1998-02-16 双葉電子工業株式会社 排気装置
FR2723471B1 (fr) * 1994-08-05 1996-10-31 Pixel Int Sa Cathode d'ecran plat de visualisation a resistance d'acces constante

Also Published As

Publication number Publication date
JPH09161665A (ja) 1997-06-20
KR970053073A (ko) 1997-07-29
TW315478B (fr) 1997-09-11
JP3060928B2 (ja) 2000-07-10
US5834885A (en) 1998-11-10
KR100243990B1 (ko) 2000-02-01
FR2742578A1 (fr) 1997-06-20

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ST Notification of lapse

Effective date: 20090831