FR2759491B1 - Cathode froide a emission de champ et son procede de fabrication - Google Patents

Cathode froide a emission de champ et son procede de fabrication

Info

Publication number
FR2759491B1
FR2759491B1 FR9801480A FR9801480A FR2759491B1 FR 2759491 B1 FR2759491 B1 FR 2759491B1 FR 9801480 A FR9801480 A FR 9801480A FR 9801480 A FR9801480 A FR 9801480A FR 2759491 B1 FR2759491 B1 FR 2759491B1
Authority
FR
France
Prior art keywords
manufacturing
field emission
emission cathode
cold field
cold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9801480A
Other languages
English (en)
Other versions
FR2759491A1 (fr
Inventor
Hisashi Takemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of FR2759491A1 publication Critical patent/FR2759491A1/fr
Application granted granted Critical
Publication of FR2759491B1 publication Critical patent/FR2759491B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration
FR9801480A 1997-02-10 1998-02-09 Cathode froide a emission de champ et son procede de fabrication Expired - Fee Related FR2759491B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2676797A JP3080021B2 (ja) 1997-02-10 1997-02-10 電界放出型冷陰極およびその製造方法

Publications (2)

Publication Number Publication Date
FR2759491A1 FR2759491A1 (fr) 1998-08-14
FR2759491B1 true FR2759491B1 (fr) 1999-06-25

Family

ID=12202451

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9801480A Expired - Fee Related FR2759491B1 (fr) 1997-02-10 1998-02-09 Cathode froide a emission de champ et son procede de fabrication

Country Status (4)

Country Link
US (1) US5910701A (fr)
JP (1) JP3080021B2 (fr)
KR (1) KR19980071203A (fr)
FR (1) FR2759491B1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100262144B1 (ko) * 1997-07-02 2000-07-15 하제준 일체화된 mosfet로 조절되는 fea 및 그 제조방법
US6168491B1 (en) 1998-03-23 2001-01-02 The United States Of America As Represented By The Secretary Of The Navy Method of forming field emitter cell and array with vertical thin-film-edge emitter
US6084245A (en) * 1998-03-23 2000-07-04 The United States Of America As Represented By The Secretary Of The Navy Field emitter cell and array with vertical thin-film-edge emitter
US6936484B2 (en) * 1998-10-16 2005-08-30 Kabushiki Kaisha Toyota Chuo Kenkyusho Method of manufacturing semiconductor device and semiconductor device
JP3139476B2 (ja) * 1998-11-06 2001-02-26 日本電気株式会社 電界放出型冷陰極
US6366266B1 (en) * 1999-09-02 2002-04-02 Micron Technology, Inc. Method and apparatus for programmable field emission display
US6333598B1 (en) 2000-01-07 2001-12-25 The United States Of America As Represented By The Secretary Of The Navy Low gate current field emitter cell and array with vertical thin-film-edge emitter
US6683414B2 (en) * 2001-10-25 2004-01-27 Northrop Grumman Corporation Ion-shielded focusing method for high-density electron beams generated by planar cold cathode electron emitters
KR100441751B1 (ko) * 2001-12-28 2004-07-27 한국전자통신연구원 전계 방출 소자의 제조 방법
KR20080034348A (ko) * 2006-10-16 2008-04-21 삼성에스디아이 주식회사 전자 방출 디바이스
JP6124502B2 (ja) * 2012-02-29 2017-05-10 キヤノン株式会社 固体撮像装置およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2650119A1 (fr) * 1989-07-21 1991-01-25 Thomson Tubes Electroniques Dispositif de regulation de courant individuel de pointe dans un reseau plan de microcathodes a effet de champ, et procede de realisation
US5371431A (en) * 1992-03-04 1994-12-06 Mcnc Vertical microelectronic field emission devices including elongate vertical pillars having resistive bottom portions
JP3142388B2 (ja) * 1992-09-16 2001-03-07 富士通株式会社 陰極装置
US5584739A (en) * 1993-02-10 1996-12-17 Futaba Denshi Kogyo K.K Field emission element and process for manufacturing same
JP2861755B2 (ja) * 1993-10-28 1999-02-24 日本電気株式会社 電界放出型陰極装置
JP3296398B2 (ja) * 1995-09-07 2002-06-24 株式会社東芝 電界放出型冷陰極装置およびその製造方法
JP3080004B2 (ja) * 1996-06-21 2000-08-21 日本電気株式会社 電界放出型冷陰極およびその製造方法

Also Published As

Publication number Publication date
US5910701A (en) 1999-06-08
FR2759491A1 (fr) 1998-08-14
JPH10223127A (ja) 1998-08-21
JP3080021B2 (ja) 2000-08-21
KR19980071203A (ko) 1998-10-26

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20071030