FR2643389B1 - Appareil de depot chimique en phase vapeur pour former un film mince - Google Patents

Appareil de depot chimique en phase vapeur pour former un film mince

Info

Publication number
FR2643389B1
FR2643389B1 FR9002202A FR9002202A FR2643389B1 FR 2643389 B1 FR2643389 B1 FR 2643389B1 FR 9002202 A FR9002202 A FR 9002202A FR 9002202 A FR9002202 A FR 9002202A FR 2643389 B1 FR2643389 B1 FR 2643389B1
Authority
FR
France
Prior art keywords
forming
thin film
vapor deposition
chemical vapor
deposition apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9002202A
Other languages
English (en)
Other versions
FR2643389A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of FR2643389A1 publication Critical patent/FR2643389A1/fr
Application granted granted Critical
Publication of FR2643389B1 publication Critical patent/FR2643389B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45517—Confinement of gases to vicinity of substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45582—Expansion of gas before it reaches the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
FR9002202A 1989-02-23 1990-02-22 Appareil de depot chimique en phase vapeur pour former un film mince Expired - Fee Related FR2643389B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1041891A JPH02222134A (ja) 1989-02-23 1989-02-23 薄膜形成装置

Publications (2)

Publication Number Publication Date
FR2643389A1 FR2643389A1 (fr) 1990-08-24
FR2643389B1 true FR2643389B1 (fr) 1993-12-03

Family

ID=12620910

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9002202A Expired - Fee Related FR2643389B1 (fr) 1989-02-23 1990-02-22 Appareil de depot chimique en phase vapeur pour former un film mince

Country Status (5)

Country Link
US (1) US4989541A (fr)
JP (1) JPH02222134A (fr)
DE (1) DE4005796C2 (fr)
FR (1) FR2643389B1 (fr)
GB (1) GB2229739B (fr)

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JPH04348031A (ja) * 1990-12-28 1992-12-03 Mitsubishi Electric Corp 化学気相成長装置
US5173336A (en) * 1991-01-22 1992-12-22 Santa Barbara Research Center Metal organic chemical vapor deposition (MOCVD) reactor with recirculation suppressing flow guide
US5134963A (en) * 1991-10-28 1992-08-04 International Business Machines Corporation LPCVD reactor for high efficiency, high uniformity deposition
JP2763222B2 (ja) * 1991-12-13 1998-06-11 三菱電機株式会社 化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置
US5229171A (en) * 1991-12-23 1993-07-20 Research Triangle Institute Apparatus and method for uniformly coating a substrate in an evacuable chamber
US5306345A (en) * 1992-08-25 1994-04-26 Particle Solutions Deposition chamber for deposition of particles on semiconductor wafers
US5662770A (en) * 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
US6242049B1 (en) * 1994-09-08 2001-06-05 Sandia Corporation Sealable stagnation flow geometries for the uniform deposition of materials and heat
US5571332A (en) * 1995-02-10 1996-11-05 Jet Process Corporation Electron jet vapor deposition system
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
US5746834A (en) * 1996-01-04 1998-05-05 Memc Electronics Materials, Inc. Method and apparatus for purging barrel reactors
US5741363A (en) * 1996-03-22 1998-04-21 Advanced Technology Materials, Inc. Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition
US6070551A (en) * 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
US6039812A (en) * 1996-10-21 2000-03-21 Abb Research Ltd. Device for epitaxially growing objects and method for such a growth
JP3925566B2 (ja) * 1996-11-15 2007-06-06 キヤノンアネルバ株式会社 薄膜形成装置
US5976623A (en) * 1996-12-03 1999-11-02 Lucent Technologies Inc. Process for making composite films
EP0854210B1 (fr) * 1996-12-19 2002-03-27 Toshiba Ceramics Co., Ltd. Appareillage pour le dépôt de films minces à partir de la phase vapeur
US6794308B2 (en) 1998-01-07 2004-09-21 Texas Instruments Incorporated Method for reducing by-product deposition in wafer processing equipment
US6730613B1 (en) * 1998-01-07 2004-05-04 Texas Instruments Incorporated Method for reducing by-product deposition in wafer processing equipment
US6143078A (en) * 1998-11-13 2000-11-07 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
US6486081B1 (en) 1998-11-13 2002-11-26 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
US6179913B1 (en) * 1999-04-16 2001-01-30 Cbl Technologies, Inc. Compound gas injection system and methods
WO2002087787A1 (fr) * 2001-04-30 2002-11-07 University Of Virginia Patent Foundation Procede et appareil permettant l'application efficace d'un revetement de substrat
US20040060514A1 (en) * 2002-01-25 2004-04-01 Applied Materials, Inc. A Delaware Corporation Gas distribution showerhead
WO2004011688A2 (fr) * 2002-07-25 2004-02-05 University Of Virginia Patent Foundation Procede et appareil de dispersion de revetements de liaison renforces pour revetements barrieres thermiques
US7335609B2 (en) * 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
US7431967B2 (en) * 2002-09-19 2008-10-07 Applied Materials, Inc. Limited thermal budget formation of PMD layers
US20070212850A1 (en) * 2002-09-19 2007-09-13 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
US7456116B2 (en) 2002-09-19 2008-11-25 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
US7141483B2 (en) * 2002-09-19 2006-11-28 Applied Materials, Inc. Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill
US7118781B1 (en) * 2003-04-16 2006-10-10 Cree, Inc. Methods for controlling formation of deposits in a deposition system and deposition methods including the same
JP2006041250A (ja) * 2004-07-28 2006-02-09 Canon Inc プラズマ処理装置および方法
US7642171B2 (en) * 2004-08-04 2010-01-05 Applied Materials, Inc. Multi-step anneal of thin films for film densification and improved gap-fill
US20070212847A1 (en) * 2004-08-04 2007-09-13 Applied Materials, Inc. Multi-step anneal of thin films for film densification and improved gap-fill
WO2007005832A2 (fr) * 2005-06-30 2007-01-11 University Of Virginia Patent Foundation Systeme de couche barriere thermique fiable, procedes s'y rapportant et appareil de production du systeme
JP5500953B2 (ja) * 2009-11-19 2014-05-21 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
FI124113B (fi) * 2010-08-30 2014-03-31 Beneq Oy Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi
US9695510B2 (en) * 2011-04-21 2017-07-04 Kurt J. Lesker Company Atomic layer deposition apparatus and process
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9399228B2 (en) * 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
US9758868B1 (en) 2016-03-10 2017-09-12 Lam Research Corporation Plasma suppression behind a showerhead through the use of increased pressure

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Also Published As

Publication number Publication date
GB9003602D0 (en) 1990-04-11
US4989541A (en) 1991-02-05
GB2229739B (en) 1993-08-25
GB2229739A (en) 1990-10-03
JPH02222134A (ja) 1990-09-04
DE4005796A1 (de) 1990-08-30
DE4005796C2 (de) 1998-10-01
FR2643389A1 (fr) 1990-08-24

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse