FR2620570B1 - Procede de fabrication de dispositif semi-conducteur " bicmos " - Google Patents
Procede de fabrication de dispositif semi-conducteur " bicmos "Info
- Publication number
- FR2620570B1 FR2620570B1 FR888811911A FR8811911A FR2620570B1 FR 2620570 B1 FR2620570 B1 FR 2620570B1 FR 888811911 A FR888811911 A FR 888811911A FR 8811911 A FR8811911 A FR 8811911A FR 2620570 B1 FR2620570 B1 FR 2620570B1
- Authority
- FR
- France
- Prior art keywords
- bicmos
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/009—Bi-MOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/124—Polycrystalline emitter
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR8710225A KR900001062B1 (ko) | 1987-09-15 | 1987-09-15 | 반도체 바이 씨 모오스 장치의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2620570A1 FR2620570A1 (fr) | 1989-03-17 |
FR2620570B1 true FR2620570B1 (fr) | 1991-02-01 |
Family
ID=19264494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR888811911A Expired - Lifetime FR2620570B1 (fr) | 1987-09-15 | 1988-09-13 | Procede de fabrication de dispositif semi-conducteur " bicmos " |
Country Status (9)
Country | Link |
---|---|
US (1) | US4970174A (fr) |
JP (1) | JPH0628294B2 (fr) |
KR (1) | KR900001062B1 (fr) |
DE (1) | DE3831264C2 (fr) |
FR (1) | FR2620570B1 (fr) |
GB (1) | GB2209873B (fr) |
HK (1) | HK18493A (fr) |
NL (1) | NL191222C (fr) |
SG (1) | SG58392G (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4918026A (en) * | 1989-03-17 | 1990-04-17 | Delco Electronics Corporation | Process for forming vertical bipolar transistors and high voltage CMOS in a single integrated circuit chip |
JP2611461B2 (ja) * | 1989-12-20 | 1997-05-21 | 日本電気株式会社 | 半導体集積回路の製造方法 |
GB2245418A (en) * | 1990-06-20 | 1992-01-02 | Koninkl Philips Electronics Nv | A semiconductor device and a method of manufacturing such a device |
US5429959A (en) * | 1990-11-23 | 1995-07-04 | Texas Instruments Incorporated | Process for simultaneously fabricating a bipolar transistor and a field-effect transistor |
DE19523536A1 (de) * | 1994-07-12 | 1996-01-18 | Siemens Ag | Verfahren zur Herstellung von MOS-Transistoren und Bipolartransistoren auf einer Halbleiterscheibe |
JP3409618B2 (ja) * | 1996-12-26 | 2003-05-26 | ソニー株式会社 | 半導体装置の製造方法 |
KR100258203B1 (ko) | 1997-12-29 | 2000-06-01 | 김영환 | 아날로그 반도체 소자의 제조방법 |
JP3244072B2 (ja) | 1998-09-09 | 2002-01-07 | 豊田工機株式会社 | 研削加工における冷却方法 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4225877A (en) * | 1978-09-05 | 1980-09-30 | Sprague Electric Company | Integrated circuit with C-Mos logic, and a bipolar driver with polysilicon resistors |
US4299024A (en) * | 1980-02-25 | 1981-11-10 | Harris Corporation | Fabrication of complementary bipolar transistors and CMOS devices with poly gates |
US4346512A (en) * | 1980-05-05 | 1982-08-31 | Raytheon Company | Integrated circuit manufacturing method |
JPS5775453A (en) * | 1980-10-29 | 1982-05-12 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
US4445268A (en) * | 1981-02-14 | 1984-05-01 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor integrated circuit BI-MOS device |
EP0080523B1 (fr) * | 1981-11-28 | 1986-10-01 | Deutsche ITT Industries GmbH | Procédé de fabrication d'un circuit intégré monolithique avec au moins une paire de transistors complémentaires à effet de champ et au moins un transistor bipolaire |
JPS58225663A (ja) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | 半導体装置の製造方法 |
JPH0783252B2 (ja) * | 1982-07-12 | 1995-09-06 | 株式会社日立製作所 | 半導体集積回路装置 |
IT1157318B (it) * | 1982-09-06 | 1987-02-11 | Instrumentation Lab Spa | Diluitore volumetrico, particolarmente adatto all'impiego su apparecchiature per analisi chimico-cliniche |
JPS59177960A (ja) * | 1983-03-28 | 1984-10-08 | Hitachi Ltd | 半導体装置およびその製造方法 |
GB2143082B (en) * | 1983-07-06 | 1987-06-17 | Standard Telephones Cables Ltd | Bipolar lateral transistor |
JPS6080267A (ja) * | 1983-10-07 | 1985-05-08 | Toshiba Corp | 半導体集積回路装置の製造方法 |
JPS60113455A (ja) * | 1983-11-24 | 1985-06-19 | Hitachi Ltd | 半導体集積回路装置 |
US4697202A (en) * | 1984-02-02 | 1987-09-29 | Sri International | Integrated circuit having dislocation free substrate |
JPS60217657A (ja) * | 1984-04-12 | 1985-10-31 | Mitsubishi Electric Corp | 半導体集積回路装置の製造方法 |
GB2164790A (en) * | 1984-09-19 | 1986-03-26 | Philips Electronic Associated | Merged bipolar and field effect transistors |
FR2571178B1 (fr) * | 1984-09-28 | 1986-11-21 | Thomson Csf | Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication |
GB8507624D0 (en) * | 1985-03-23 | 1985-05-01 | Standard Telephones Cables Ltd | Semiconductor devices |
US4604790A (en) * | 1985-04-01 | 1986-08-12 | Advanced Micro Devices, Inc. | Method of fabricating integrated circuit structure having CMOS and bipolar devices |
FR2581248B1 (fr) * | 1985-04-26 | 1987-05-29 | Efcis | Procede de fabrication de transistors a effet de champ et transistors bipolaires lateraux sur un meme substrat |
ATE41836T1 (de) * | 1985-06-03 | 1989-04-15 | Siemens Ag | Verfahren zum gleichzeitigen herstellen von bipolaren und komplementaeren mos-transistoren auf einem gemeinsamen siliziumsubstrat. |
JPS61287159A (ja) * | 1985-06-13 | 1986-12-17 | Oki Electric Ind Co Ltd | Bi−CMOS半導体IC装置の製造方法 |
US4808548A (en) * | 1985-09-18 | 1989-02-28 | Advanced Micro Devices, Inc. | Method of making bipolar and MOS devices on same integrated circuit substrate |
US4707456A (en) * | 1985-09-18 | 1987-11-17 | Advanced Micro Devices, Inc. | Method of making a planar structure containing MOS and bipolar transistors |
US4783483A (en) * | 1985-10-03 | 1988-11-08 | Ortho Pharmaceutical Corporation | Epoxides useful as antiallergic agents |
US4737472A (en) * | 1985-12-17 | 1988-04-12 | Siemens Aktiengesellschaft | Process for the simultaneous production of self-aligned bipolar transistors and complementary MOS transistors on a common silicon substrate |
US4752589A (en) * | 1985-12-17 | 1988-06-21 | Siemens Aktiengesellschaft | Process for the production of bipolar transistors and complementary MOS transistors on a common silicon substrate |
US4735911A (en) * | 1985-12-17 | 1988-04-05 | Siemens Aktiengesellschaft | Process for the simultaneous production of bipolar and complementary MOS transistors on a common silicon substrate |
JPS62165354A (ja) * | 1986-01-16 | 1987-07-21 | Hitachi Ltd | 半導体集積回路装置 |
GB2186117B (en) * | 1986-01-30 | 1989-11-01 | Sgs Microelettronica Spa | Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication |
GB2188479B (en) * | 1986-03-26 | 1990-05-23 | Stc Plc | Semiconductor devices |
US4808547A (en) * | 1986-07-07 | 1989-02-28 | Harris Corporation | Method of fabrication of high voltage IC bopolar transistors operable to BVCBO |
US4727046A (en) * | 1986-07-16 | 1988-02-23 | Fairchild Semiconductor Corporation | Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases |
JPS63198367A (ja) * | 1987-02-13 | 1988-08-17 | Toshiba Corp | 半導体装置 |
US4734382A (en) * | 1987-02-20 | 1988-03-29 | Fairchild Semiconductor Corporation | BiCMOS process having narrow bipolar emitter and implanted aluminum isolation |
-
1987
- 1987-09-15 KR KR8710225A patent/KR900001062B1/ko not_active IP Right Cessation
-
1988
- 1988-09-13 FR FR888811911A patent/FR2620570B1/fr not_active Expired - Lifetime
- 1988-09-14 JP JP63228906A patent/JPH0628294B2/ja not_active Expired - Lifetime
- 1988-09-14 DE DE3831264A patent/DE3831264C2/de not_active Expired - Lifetime
- 1988-09-15 GB GB8821640A patent/GB2209873B/en not_active Expired - Lifetime
- 1988-09-15 NL NL8802282A patent/NL191222C/xx not_active IP Right Cessation
- 1988-09-15 US US07/244,810 patent/US4970174A/en not_active Expired - Lifetime
-
1992
- 1992-06-03 SG SG583/92A patent/SG58392G/en unknown
-
1993
- 1993-03-04 HK HK184/93A patent/HK18493A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE3831264C2 (de) | 1994-10-20 |
SG58392G (en) | 1992-07-24 |
GB2209873A (en) | 1989-05-24 |
NL191222C (nl) | 1995-03-16 |
KR900001062B1 (ko) | 1990-02-26 |
US4970174A (en) | 1990-11-13 |
JPH01164061A (ja) | 1989-06-28 |
NL191222B (nl) | 1994-10-17 |
JPH0628294B2 (ja) | 1994-04-13 |
GB8821640D0 (en) | 1988-10-12 |
GB2209873B (en) | 1990-12-12 |
KR890005817A (ko) | 1989-05-17 |
HK18493A (en) | 1993-03-12 |
NL8802282A (nl) | 1989-04-03 |
DE3831264A1 (de) | 1989-03-30 |
FR2620570A1 (fr) | 1989-03-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property |