FR2620570B1 - Procede de fabrication de dispositif semi-conducteur " bicmos " - Google Patents

Procede de fabrication de dispositif semi-conducteur " bicmos "

Info

Publication number
FR2620570B1
FR2620570B1 FR888811911A FR8811911A FR2620570B1 FR 2620570 B1 FR2620570 B1 FR 2620570B1 FR 888811911 A FR888811911 A FR 888811911A FR 8811911 A FR8811911 A FR 8811911A FR 2620570 B1 FR2620570 B1 FR 2620570B1
Authority
FR
France
Prior art keywords
bicmos
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR888811911A
Other languages
English (en)
Other versions
FR2620570A1 (fr
Inventor
Sung-Ki Min
Chang-Won Kahng
Uk-Rae Cho
Jong-Mil Youn
Suk-Gi Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Semiconductor and Telecomunications Co Ltd
Original Assignee
Samsung Semiconductor and Telecomunications Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor and Telecomunications Co Ltd filed Critical Samsung Semiconductor and Telecomunications Co Ltd
Publication of FR2620570A1 publication Critical patent/FR2620570A1/fr
Application granted granted Critical
Publication of FR2620570B1 publication Critical patent/FR2620570B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/009—Bi-MOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/124—Polycrystalline emitter

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)
FR888811911A 1987-09-15 1988-09-13 Procede de fabrication de dispositif semi-conducteur " bicmos " Expired - Lifetime FR2620570B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR8710225A KR900001062B1 (ko) 1987-09-15 1987-09-15 반도체 바이 씨 모오스 장치의 제조방법

Publications (2)

Publication Number Publication Date
FR2620570A1 FR2620570A1 (fr) 1989-03-17
FR2620570B1 true FR2620570B1 (fr) 1991-02-01

Family

ID=19264494

Family Applications (1)

Application Number Title Priority Date Filing Date
FR888811911A Expired - Lifetime FR2620570B1 (fr) 1987-09-15 1988-09-13 Procede de fabrication de dispositif semi-conducteur " bicmos "

Country Status (9)

Country Link
US (1) US4970174A (fr)
JP (1) JPH0628294B2 (fr)
KR (1) KR900001062B1 (fr)
DE (1) DE3831264C2 (fr)
FR (1) FR2620570B1 (fr)
GB (1) GB2209873B (fr)
HK (1) HK18493A (fr)
NL (1) NL191222C (fr)
SG (1) SG58392G (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4918026A (en) * 1989-03-17 1990-04-17 Delco Electronics Corporation Process for forming vertical bipolar transistors and high voltage CMOS in a single integrated circuit chip
JP2611461B2 (ja) * 1989-12-20 1997-05-21 日本電気株式会社 半導体集積回路の製造方法
GB2245418A (en) * 1990-06-20 1992-01-02 Koninkl Philips Electronics Nv A semiconductor device and a method of manufacturing such a device
US5429959A (en) * 1990-11-23 1995-07-04 Texas Instruments Incorporated Process for simultaneously fabricating a bipolar transistor and a field-effect transistor
DE19523536A1 (de) * 1994-07-12 1996-01-18 Siemens Ag Verfahren zur Herstellung von MOS-Transistoren und Bipolartransistoren auf einer Halbleiterscheibe
JP3409618B2 (ja) * 1996-12-26 2003-05-26 ソニー株式会社 半導体装置の製造方法
KR100258203B1 (ko) 1997-12-29 2000-06-01 김영환 아날로그 반도체 소자의 제조방법
JP3244072B2 (ja) 1998-09-09 2002-01-07 豊田工機株式会社 研削加工における冷却方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4225877A (en) * 1978-09-05 1980-09-30 Sprague Electric Company Integrated circuit with C-Mos logic, and a bipolar driver with polysilicon resistors
US4299024A (en) * 1980-02-25 1981-11-10 Harris Corporation Fabrication of complementary bipolar transistors and CMOS devices with poly gates
US4346512A (en) * 1980-05-05 1982-08-31 Raytheon Company Integrated circuit manufacturing method
JPS5775453A (en) * 1980-10-29 1982-05-12 Fujitsu Ltd Semiconductor device and manufacture thereof
US4445268A (en) * 1981-02-14 1984-05-01 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor integrated circuit BI-MOS device
EP0080523B1 (fr) * 1981-11-28 1986-10-01 Deutsche ITT Industries GmbH Procédé de fabrication d'un circuit intégré monolithique avec au moins une paire de transistors complémentaires à effet de champ et au moins un transistor bipolaire
JPS58225663A (ja) * 1982-06-23 1983-12-27 Toshiba Corp 半導体装置の製造方法
JPH0783252B2 (ja) * 1982-07-12 1995-09-06 株式会社日立製作所 半導体集積回路装置
IT1157318B (it) * 1982-09-06 1987-02-11 Instrumentation Lab Spa Diluitore volumetrico, particolarmente adatto all'impiego su apparecchiature per analisi chimico-cliniche
JPS59177960A (ja) * 1983-03-28 1984-10-08 Hitachi Ltd 半導体装置およびその製造方法
GB2143082B (en) * 1983-07-06 1987-06-17 Standard Telephones Cables Ltd Bipolar lateral transistor
JPS6080267A (ja) * 1983-10-07 1985-05-08 Toshiba Corp 半導体集積回路装置の製造方法
JPS60113455A (ja) * 1983-11-24 1985-06-19 Hitachi Ltd 半導体集積回路装置
US4697202A (en) * 1984-02-02 1987-09-29 Sri International Integrated circuit having dislocation free substrate
JPS60217657A (ja) * 1984-04-12 1985-10-31 Mitsubishi Electric Corp 半導体集積回路装置の製造方法
GB2164790A (en) * 1984-09-19 1986-03-26 Philips Electronic Associated Merged bipolar and field effect transistors
FR2571178B1 (fr) * 1984-09-28 1986-11-21 Thomson Csf Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication
GB8507624D0 (en) * 1985-03-23 1985-05-01 Standard Telephones Cables Ltd Semiconductor devices
US4604790A (en) * 1985-04-01 1986-08-12 Advanced Micro Devices, Inc. Method of fabricating integrated circuit structure having CMOS and bipolar devices
FR2581248B1 (fr) * 1985-04-26 1987-05-29 Efcis Procede de fabrication de transistors a effet de champ et transistors bipolaires lateraux sur un meme substrat
ATE41836T1 (de) * 1985-06-03 1989-04-15 Siemens Ag Verfahren zum gleichzeitigen herstellen von bipolaren und komplementaeren mos-transistoren auf einem gemeinsamen siliziumsubstrat.
JPS61287159A (ja) * 1985-06-13 1986-12-17 Oki Electric Ind Co Ltd Ｂｉ−ＣＭＯＳ半導体ＩＣ装置の製造方法
US4808548A (en) * 1985-09-18 1989-02-28 Advanced Micro Devices, Inc. Method of making bipolar and MOS devices on same integrated circuit substrate
US4707456A (en) * 1985-09-18 1987-11-17 Advanced Micro Devices, Inc. Method of making a planar structure containing MOS and bipolar transistors
US4783483A (en) * 1985-10-03 1988-11-08 Ortho Pharmaceutical Corporation Epoxides useful as antiallergic agents
US4737472A (en) * 1985-12-17 1988-04-12 Siemens Aktiengesellschaft Process for the simultaneous production of self-aligned bipolar transistors and complementary MOS transistors on a common silicon substrate
US4752589A (en) * 1985-12-17 1988-06-21 Siemens Aktiengesellschaft Process for the production of bipolar transistors and complementary MOS transistors on a common silicon substrate
US4735911A (en) * 1985-12-17 1988-04-05 Siemens Aktiengesellschaft Process for the simultaneous production of bipolar and complementary MOS transistors on a common silicon substrate
JPS62165354A (ja) * 1986-01-16 1987-07-21 Hitachi Ltd 半導体集積回路装置
GB2186117B (en) * 1986-01-30 1989-11-01 Sgs Microelettronica Spa Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
GB2188479B (en) * 1986-03-26 1990-05-23 Stc Plc Semiconductor devices
US4808547A (en) * 1986-07-07 1989-02-28 Harris Corporation Method of fabrication of high voltage IC bopolar transistors operable to BVCBO
US4727046A (en) * 1986-07-16 1988-02-23 Fairchild Semiconductor Corporation Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases
JPS63198367A (ja) * 1987-02-13 1988-08-17 Toshiba Corp 半導体装置
US4734382A (en) * 1987-02-20 1988-03-29 Fairchild Semiconductor Corporation BiCMOS process having narrow bipolar emitter and implanted aluminum isolation

Also Published As

Publication number Publication date
DE3831264C2 (de) 1994-10-20
SG58392G (en) 1992-07-24
GB2209873A (en) 1989-05-24
NL191222C (nl) 1995-03-16
KR900001062B1 (ko) 1990-02-26
US4970174A (en) 1990-11-13
JPH01164061A (ja) 1989-06-28
NL191222B (nl) 1994-10-17
JPH0628294B2 (ja) 1994-04-13
GB8821640D0 (en) 1988-10-12
GB2209873B (en) 1990-12-12
KR890005817A (ko) 1989-05-17
HK18493A (en) 1993-03-12
NL8802282A (nl) 1989-04-03
DE3831264A1 (de) 1989-03-30
FR2620570A1 (fr) 1989-03-17

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Legal Events

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TP Transmission of property