FR2618256B1 - Dispositif recepteur de lumiere a semi-conducteur. - Google Patents
Dispositif recepteur de lumiere a semi-conducteur.Info
- Publication number
- FR2618256B1 FR2618256B1 FR888805920A FR8805920A FR2618256B1 FR 2618256 B1 FR2618256 B1 FR 2618256B1 FR 888805920 A FR888805920 A FR 888805920A FR 8805920 A FR8805920 A FR 8805920A FR 2618256 B1 FR2618256 B1 FR 2618256B1
- Authority
- FR
- France
- Prior art keywords
- light receiving
- receiving device
- semiconductor light
- semiconductor
- receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
- H01L27/14881—Infrared CCD or CID imagers of the hybrid type
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62179620A JPH069240B2 (ja) | 1987-07-17 | 1987-07-17 | 半導体受光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2618256A1 FR2618256A1 (fr) | 1989-01-20 |
FR2618256B1 true FR2618256B1 (fr) | 1991-02-01 |
Family
ID=16068942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR888805920A Expired - Fee Related FR2618256B1 (fr) | 1987-07-17 | 1988-05-03 | Dispositif recepteur de lumiere a semi-conducteur. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4801991A (fr) |
JP (1) | JPH069240B2 (fr) |
FR (1) | FR2618256B1 (fr) |
GB (1) | GB2207282B (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0748826B2 (ja) * | 1988-12-01 | 1995-05-24 | 三菱電機株式会社 | 固体撮像装置 |
US5156980A (en) * | 1989-03-10 | 1992-10-20 | Mitsubishi Denki Kabushiki Kaisha | Method of making a rear surface incident type photodetector |
JPH02237154A (ja) * | 1989-03-10 | 1990-09-19 | Mitsubishi Electric Corp | 光検知装置 |
US4952811A (en) * | 1989-06-21 | 1990-08-28 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Field induced gap infrared detector |
EP0509141A1 (fr) * | 1991-04-11 | 1992-10-21 | Landis & Gyr Business Support AG | Capteur de champ magnétique |
JP2817435B2 (ja) * | 1991-04-17 | 1998-10-30 | 日本電気株式会社 | 配列型赤外線検知器の製造方法 |
US5591996A (en) * | 1995-03-24 | 1997-01-07 | Analog Devices, Inc. | Recirculating charge transfer magnetic field sensor |
JP5489705B2 (ja) * | 2009-12-26 | 2014-05-14 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP2011216706A (ja) * | 2010-03-31 | 2011-10-27 | Asahi Kasei Electronics Co Ltd | 赤外線センサ |
US9191637B2 (en) * | 2013-09-10 | 2015-11-17 | Kabushiki Kaisha Toshiba | Solid-state imaging apparatus |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3863070A (en) * | 1972-05-04 | 1975-01-28 | Robert H Wheeler | Quantum mechanical mosfet infrared radiation detector |
US3906359A (en) * | 1973-08-06 | 1975-09-16 | Westinghouse Electric Corp | Magnetic field sensing CCD device with a slower output sampling rate than the transfer rate yielding an integration |
US4039833A (en) * | 1976-08-17 | 1977-08-02 | The United States Of America As Represented By The Secretary Of The Navy | High density infrared detector array |
US4115692A (en) * | 1977-05-04 | 1978-09-19 | The United States Of America As Represented By The Secretary Of The Army | Solid state readout device for a two dimensional pyroelectric detector array |
US4369458A (en) * | 1980-07-01 | 1983-01-18 | Westinghouse Electric Corp. | Self-aligned, flip-chip focal plane array configuration |
JPS58131765A (ja) * | 1982-01-29 | 1983-08-05 | Fuji Xerox Co Ltd | 原稿読取装置 |
US4481522A (en) * | 1982-03-24 | 1984-11-06 | Rca Corporation | CCD Imagers with substrates having drift field |
JPS6042878A (ja) * | 1983-08-18 | 1985-03-07 | Mitsubishi Electric Corp | 光検出器 |
JPS61141175A (ja) * | 1984-12-14 | 1986-06-28 | Hamamatsu Photonics Kk | 半導体光検出装置 |
JPS6236858A (ja) * | 1985-08-10 | 1987-02-17 | Fujitsu Ltd | 半導体受光装置 |
-
1987
- 1987-07-17 JP JP62179620A patent/JPH069240B2/ja not_active Expired - Lifetime
- 1987-10-14 US US07/108,076 patent/US4801991A/en not_active Expired - Fee Related
- 1987-10-28 GB GB8725221A patent/GB2207282B/en not_active Expired - Fee Related
-
1988
- 1988-05-03 FR FR888805920A patent/FR2618256B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH069240B2 (ja) | 1994-02-02 |
GB2207282B (en) | 1990-11-21 |
GB2207282A (en) | 1989-01-25 |
US4801991A (en) | 1989-01-31 |
JPS6423567A (en) | 1989-01-26 |
GB8725221D0 (en) | 1987-12-02 |
FR2618256A1 (fr) | 1989-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2651605B1 (fr) | Dispositif emetteur de lumiere a semiconducteur. | |
FR2507014B1 (fr) | Dispositif emetteur de lumiere a semiconducteur du type laser | |
FR2609841B1 (fr) | Dispositif de circuit integre a semi-conducteurs | |
DE3765272D1 (de) | Lichtempfindliche vorrichtung. | |
NL192281B (nl) | Halfgeleider-lichtdetectorinrichting. | |
FR2650916B1 (fr) | Dispositif photovoltaique | |
FR2625043B1 (fr) | Dispositif semi-conducteur | |
FR2557729B1 (fr) | Dispositif convertisseur photoelectrique a semi-conducteurs | |
DE3884659D1 (de) | Optische Halbleiteranordnung. | |
FR2489593B1 (fr) | Dispositif redresseur a semi-conducteurs | |
FR2534430B1 (fr) | Dispositif electroluminescent | |
DE68922472D1 (de) | Optisches Gerät. | |
FR2521737B1 (fr) | Dispositif optique bistable | |
DE68914794D1 (de) | Lichtempfindliche Halbleitervorrichtung. | |
DE3850890D1 (de) | Optisches Halbleitermodul. | |
FR2552267B1 (fr) | Dispositif de photodetection a jonctions josephson | |
DE3889523D1 (de) | Optisches Gerät. | |
FR2618256B1 (fr) | Dispositif recepteur de lumiere a semi-conducteur. | |
FR2534078B1 (fr) | Dispositif laser a semi-conducteur | |
FR2657196B1 (fr) | Monture intermediaire de dispositif laser a semi-conducteur. | |
FR2534079B1 (fr) | Dispositif laser a semi-conducteur | |
DE3887790D1 (de) | Lichtemittierende Halbleitervorrichtung. | |
FR2620572B1 (fr) | Dispositif photovoltaique | |
DE3851824D1 (de) | Optische Halbleitervorrichtung. | |
FR2493603B1 (fr) | Dispositif semiconducteur |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
D6 | Patent endorsed licences of rights | ||
D6 | Patent endorsed licences of rights | ||
ST | Notification of lapse |