FR2601506B1 - Dispositif de conversion photo-electrique - Google Patents

Dispositif de conversion photo-electrique

Info

Publication number
FR2601506B1
FR2601506B1 FR878709837A FR8709837A FR2601506B1 FR 2601506 B1 FR2601506 B1 FR 2601506B1 FR 878709837 A FR878709837 A FR 878709837A FR 8709837 A FR8709837 A FR 8709837A FR 2601506 B1 FR2601506 B1 FR 2601506B1
Authority
FR
France
Prior art keywords
photoelectric conversion
conversion device
photoelectric
conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR878709837A
Other languages
English (en)
Other versions
FR2601506A1 (fr
Inventor
Mahito Shinohara
Takao Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of FR2601506A1 publication Critical patent/FR2601506A1/fr
Application granted granted Critical
Publication of FR2601506B1 publication Critical patent/FR2601506B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR878709837A 1986-07-11 1987-07-10 Dispositif de conversion photo-electrique Expired - Lifetime FR2601506B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61162127A JPH0812905B2 (ja) 1986-07-11 1986-07-11 光電変換装置及びその製造方法

Publications (2)

Publication Number Publication Date
FR2601506A1 FR2601506A1 (fr) 1988-01-15
FR2601506B1 true FR2601506B1 (fr) 1992-03-13

Family

ID=15748554

Family Applications (1)

Application Number Title Priority Date Filing Date
FR878709837A Expired - Lifetime FR2601506B1 (fr) 1986-07-11 1987-07-10 Dispositif de conversion photo-electrique

Country Status (5)

Country Link
US (1) US5086326A (fr)
JP (1) JPH0812905B2 (fr)
DE (1) DE3722761A1 (fr)
FR (1) FR2601506B1 (fr)
GB (1) GB2192487B (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5410175A (en) * 1989-08-31 1995-04-25 Hamamatsu Photonics K.K. Monolithic IC having pin photodiode and an electrically active element accommodated on the same semi-conductor substrate
JPH04261071A (ja) * 1991-01-11 1992-09-17 Canon Inc 光電変換装置
USH1435H (en) * 1991-10-21 1995-05-02 Cherne Richard D SOI CMOS device having body extension for providing sidewall channel stop and bodytie
US5557114A (en) * 1995-01-12 1996-09-17 International Business Machines Corporation Optical fet
US6037643A (en) * 1998-02-17 2000-03-14 Hewlett-Packard Company Photocell layout for high-speed optical navigation microchips
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
JP4497844B2 (ja) * 2003-05-30 2010-07-07 キヤノン株式会社 固体撮像装置の製造方法
JP2005328275A (ja) * 2004-05-13 2005-11-24 Canon Inc 固体撮像装置および撮像システム
JP5188221B2 (ja) * 2008-03-14 2013-04-24 キヤノン株式会社 固体撮像装置
JP2010016056A (ja) 2008-07-01 2010-01-21 Canon Inc 光電変換装置
JP5661260B2 (ja) * 2009-07-16 2015-01-28 キヤノン株式会社 固体撮像装置及びその駆動方法
JP5489570B2 (ja) * 2009-07-27 2014-05-14 キヤノン株式会社 光電変換装置及び撮像システム
JP5767465B2 (ja) 2010-12-15 2015-08-19 キヤノン株式会社 固体撮像装置およびその製造方法ならびにカメラ
JP2015177034A (ja) 2014-03-14 2015-10-05 キヤノン株式会社 固体撮像装置、その製造方法、及びカメラ
JP6552479B2 (ja) 2016-12-28 2019-07-31 キヤノン株式会社 固体撮像装置及び撮像システム
JP6953263B2 (ja) 2017-10-05 2021-10-27 キヤノン株式会社 固体撮像装置および撮像システム
JP7108421B2 (ja) 2018-02-15 2022-07-28 キヤノン株式会社 撮像装置及び撮像システム
JP7134781B2 (ja) 2018-08-17 2022-09-12 キヤノン株式会社 光電変換装置及び撮像システム
US11503234B2 (en) 2019-02-27 2022-11-15 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, radioactive ray imaging system, and movable object
JP2022025594A (ja) 2020-07-29 2022-02-10 キヤノン株式会社 光電変換装置
JP2022052529A (ja) 2020-09-23 2022-04-04 キヤノン株式会社 光電変換装置、撮像装置、半導体装置及び光電変換システム

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850030B2 (ja) * 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
JPS55128884A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Semiconductor photodetector
US4471371A (en) * 1981-01-06 1984-09-11 Fuji Xerox Co., Ltd. Thin film image pickup element
DE3146981A1 (de) * 1981-11-26 1983-06-01 Siemens AG, 1000 Berlin und 8000 München Fototransistor in mos-duennschichttechnik, verfahren zu seiner herstellung und verfahren zu seinem betrieb.
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
JPS60130160A (ja) * 1983-12-19 1985-07-11 Hitachi Ltd 半導体記憶装置
US4763183A (en) * 1984-08-01 1988-08-09 American Telephone And Telegraph Co., At&T Bell Laboratories Semiconductor-on-insulator (SOI) devices and SOI IC fabrication method

Also Published As

Publication number Publication date
DE3722761A1 (de) 1988-01-21
GB2192487B (en) 1990-09-05
GB2192487A (en) 1988-01-13
JPH0812905B2 (ja) 1996-02-07
US5086326A (en) 1992-02-04
JPS6318666A (ja) 1988-01-26
FR2601506A1 (fr) 1988-01-15
GB8715368D0 (en) 1987-08-05
DE3722761C2 (fr) 1992-08-27

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Legal Events

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ST Notification of lapse