FR2583572B1 - Procede et appareil pour fabriquer un film mince cristallin. - Google Patents

Procede et appareil pour fabriquer un film mince cristallin.

Info

Publication number
FR2583572B1
FR2583572B1 FR868608724A FR8608724A FR2583572B1 FR 2583572 B1 FR2583572 B1 FR 2583572B1 FR 868608724 A FR868608724 A FR 868608724A FR 8608724 A FR8608724 A FR 8608724A FR 2583572 B1 FR2583572 B1 FR 2583572B1
Authority
FR
France
Prior art keywords
manufacturing
crystalline film
thin crystalline
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR868608724A
Other languages
English (en)
French (fr)
Other versions
FR2583572A1 (fr
Inventor
Yasuo Kanoh
Shigeru Kojima
Setsuo Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2583572A1 publication Critical patent/FR2583572A1/fr
Application granted granted Critical
Publication of FR2583572B1 publication Critical patent/FR2583572B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
FR868608724A 1985-06-18 1986-06-17 Procede et appareil pour fabriquer un film mince cristallin. Expired - Lifetime FR2583572B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60130764A JPS61289617A (ja) 1985-06-18 1985-06-18 薄膜単結晶の製造装置

Publications (2)

Publication Number Publication Date
FR2583572A1 FR2583572A1 (fr) 1986-12-19
FR2583572B1 true FR2583572B1 (fr) 1990-05-11

Family

ID=15042097

Family Applications (1)

Application Number Title Priority Date Filing Date
FR868608724A Expired - Lifetime FR2583572B1 (fr) 1985-06-18 1986-06-17 Procede et appareil pour fabriquer un film mince cristallin.

Country Status (5)

Country Link
JP (1) JPS61289617A (de)
KR (1) KR870000744A (de)
DE (1) DE3620300A1 (de)
FR (1) FR2583572B1 (de)
GB (1) GB2177256B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2211210A (en) * 1987-10-16 1989-06-28 Philips Electronic Associated A method of modifying a surface of a body using electromagnetic radiation
WO1989004387A1 (en) * 1987-11-13 1989-05-18 Kopin Corporation Improved zone melt recrystallization method and apparatus
US5074952A (en) * 1987-11-13 1991-12-24 Kopin Corporation Zone-melt recrystallization method and apparatus
JPH01246829A (ja) * 1988-03-28 1989-10-02 Tokyo Electron Ltd ビームアニール装置
DE3818504A1 (de) * 1988-05-31 1991-01-03 Fraunhofer Ges Forschung Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial
DE3921038C2 (de) * 1988-06-28 1998-12-10 Ricoh Kk Verfahren zur Herstellung eines Halbleitersubstrats bzw. Festkörperaufbaus
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
US5173446A (en) * 1988-06-28 1992-12-22 Ricoh Company, Ltd. Semiconductor substrate manufacturing by recrystallization using a cooling medium
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
US5338388A (en) * 1992-05-04 1994-08-16 Mitsubishi Denki Kabushiki Kaisha Method of forming single-crystal semiconductor films
US8183498B2 (en) * 2006-05-01 2012-05-22 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
US8927898B2 (en) 2006-05-01 2015-01-06 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
DE112008000934B4 (de) * 2007-04-24 2022-10-27 LIMO GmbH Verfahren zur Umstrukturierung von Halbleiterschichten

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4155779A (en) * 1978-08-21 1979-05-22 Bell Telephone Laboratories, Incorporated Control techniques for annealing semiconductors
US4380864A (en) * 1981-07-27 1983-04-26 The United States Of America As Represented By The Secretary Of The Air Force Method for providing in-situ non-destructive monitoring of semiconductors during laser annealing process

Also Published As

Publication number Publication date
FR2583572A1 (fr) 1986-12-19
KR870000744A (ko) 1987-02-20
GB2177256A (en) 1987-01-14
GB8614683D0 (en) 1986-07-23
JPS61289617A (ja) 1986-12-19
DE3620300A1 (de) 1986-12-18
GB2177256B (en) 1988-12-21

Similar Documents

Publication Publication Date Title
GB2173822B (en) Thin film forming apparatus and method
EP0266178A3 (en) Method and apparatus for forming a thin film
FR2563756B1 (fr) Procede et appareil pour former un panneau de bout de recipient
PT84365A (fr) Procede et appareil d:extrusion
FR2562528B1 (fr) Procede pour decoller un film protecteur d'un objet mince et appareil pour sa mise en oeuvre
KR880700759A (ko) 뚜껑 밀폐구 및 그 형성 방법 및 장치
ES556591A0 (es) Un metodo para obtener una pelicula orientada de capas multiples coextruidas
BE880949A (fr) Procede et appareil de fabrication de fermetures a cursuer
FR2584651B1 (fr) Procede et dispositif pour la realisation de films a parois ajourees
IT1152545B (it) Apparecchio e metodo per la pallinatura a graniglia
FR2583572B1 (fr) Procede et appareil pour fabriquer un film mince cristallin.
FR2563007B1 (fr) Procede et appareil pour le dosage d'un microconstituant
FR2591535B1 (fr) Procede et dispositif pour la fabrication de blocs de fiches autocollantes
FR2504505B1 (fr) Procede et dispositif pour deposer des feuilles
BE850134A (fr) Procede et dispositif de rainage d'un materiau plat et mince
BE851497A (fr) Procede et appareil pour manipuler
FR2592396B1 (fr) Procede pour former un film depose.
GB2205860B (en) Apparatus for forming a thin film
FR2520522B1 (fr) Appareil et procede d'holographie a multiplication de phase
FR2548157B1 (fr) Procede et appareil de palettisation de paquets de feuilles
FR2505247B1 (fr) Procede et appareil pour produire une feuille ou pellicule a orientation biaxiale
BE894745A (fr) Dispositif medical et procede pour le fabriquer
IT8012430A0 (it) Contenitore e metodo per la sua fabbricazione
FR2528359B1 (fr) Appareillage et procede pour fabrication d'elements feuilletes
FR2500953B1 (fr) Condensateur et procede et appareil pour sa fabrication

Legal Events

Date Code Title Description
ST Notification of lapse