FR2573917B1 - Appareil et procede de depot a la vapeur pour la realisation de semi-conducteurs - Google Patents
Appareil et procede de depot a la vapeur pour la realisation de semi-conducteursInfo
- Publication number
- FR2573917B1 FR2573917B1 FR858517519A FR8517519A FR2573917B1 FR 2573917 B1 FR2573917 B1 FR 2573917B1 FR 858517519 A FR858517519 A FR 858517519A FR 8517519 A FR8517519 A FR 8517519A FR 2573917 B1 FR2573917 B1 FR 2573917B1
- Authority
- FR
- France
- Prior art keywords
- steam deposition
- producing semiconductors
- semiconductors
- steam
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008021 deposition Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000004326 stimulated echo acquisition mode for imaging Methods 0.000 title 1
Classifications
-
- H01L21/205—
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59250243A JPH0639358B2 (ja) | 1984-11-27 | 1984-11-27 | 有機金属気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2573917A1 FR2573917A1 (fr) | 1986-05-30 |
FR2573917B1 true FR2573917B1 (fr) | 1989-03-17 |
Family
ID=17204968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR858517519A Expired FR2573917B1 (fr) | 1984-11-27 | 1985-11-27 | Appareil et procede de depot a la vapeur pour la realisation de semi-conducteurs |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH0639358B2 (fr) |
KR (1) | KR940011099B1 (fr) |
DE (1) | DE3541962C2 (fr) |
FR (1) | FR2573917B1 (fr) |
GB (1) | GB2168080B (fr) |
NL (1) | NL8503293A (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2582552B2 (ja) * | 1986-05-29 | 1997-02-19 | 三菱電機株式会社 | イオン注入装置 |
JPS63144513A (ja) * | 1986-12-09 | 1988-06-16 | Nkk Corp | バレル型エピタキシヤル成長装置 |
US5002011A (en) * | 1987-04-14 | 1991-03-26 | Kabushiki Kaisha Toshiba | Vapor deposition apparatus |
US4858558A (en) * | 1988-01-25 | 1989-08-22 | Nippon Kokan Kabushiki Kaisha | Film forming apparatus |
US5558721A (en) * | 1993-11-15 | 1996-09-24 | The Furukawa Electric Co., Ltd. | Vapor phase growth system and a gas-drive motor |
US5776256A (en) * | 1996-10-01 | 1998-07-07 | The United States Of America As Represented By The Secretary Of The Air Force | Coating chamber planetary gear mirror rotating system |
DE10261362B8 (de) * | 2002-12-30 | 2008-08-28 | Osram Opto Semiconductors Gmbh | Substrat-Halter |
US7182814B1 (en) * | 2005-08-12 | 2007-02-27 | Hong-Cing Lin | Sample holder for physical vapor deposition equipment |
KR100790729B1 (ko) * | 2006-12-11 | 2008-01-02 | 삼성전기주식회사 | 화학 기상 증착 장치 |
JP5394092B2 (ja) * | 2009-02-10 | 2014-01-22 | 東洋炭素株式会社 | Cvd装置 |
EP2767612A4 (fr) * | 2011-10-14 | 2015-03-25 | Toyo Tanso Co | Dispositif de dépôt chimique en phase vapeur (cvd), procédé de fabrication d'un suscepteur dans lequel un dispositif de cvd est utilisé et suscepteur |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3598083A (en) * | 1969-10-27 | 1971-08-10 | Varian Associates | Complex motion mechanism for thin film coating apparatuses |
US3690290A (en) * | 1971-04-29 | 1972-09-12 | Motorola Inc | Apparatus for providing epitaxial layers on a substrate |
JPS5145337B2 (fr) * | 1971-05-21 | 1976-12-03 | ||
CA956999A (en) * | 1971-08-26 | 1974-10-29 | Leland B. Wagner | Pressure responsive device having stacked diaphragm assembly |
JPS4841669A (fr) * | 1971-09-28 | 1973-06-18 | ||
JPS5019015U (fr) * | 1973-06-14 | 1975-03-03 | ||
CH599982A5 (fr) * | 1975-09-02 | 1978-06-15 | Balzers Patent Beteilig Ag |
-
1984
- 1984-11-27 JP JP59250243A patent/JPH0639358B2/ja not_active Expired - Lifetime
-
1985
- 1985-10-08 KR KR1019850007389A patent/KR940011099B1/ko not_active IP Right Cessation
- 1985-11-27 GB GB08529157A patent/GB2168080B/en not_active Expired
- 1985-11-27 FR FR858517519A patent/FR2573917B1/fr not_active Expired
- 1985-11-27 NL NL8503293A patent/NL8503293A/nl active Search and Examination
- 1985-11-27 DE DE3541962A patent/DE3541962C2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2168080A (en) | 1986-06-11 |
JPH0639358B2 (ja) | 1994-05-25 |
GB8529157D0 (en) | 1986-01-02 |
GB2168080B (en) | 1988-05-11 |
JPS61127696A (ja) | 1986-06-14 |
FR2573917A1 (fr) | 1986-05-30 |
NL8503293A (nl) | 1986-06-16 |
KR940011099B1 (ko) | 1994-11-23 |
DE3541962A1 (de) | 1986-06-12 |
KR860004456A (ko) | 1986-06-23 |
DE3541962C2 (de) | 1993-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2563756B1 (fr) | Procede et appareil pour former un panneau de bout de recipient | |
FR2514037B1 (fr) | Appareil et procede d'electrodeposition continue sur des pieces planes distinctes | |
FR2557996B1 (fr) | Procede de formation d'image et appareil pour sa mise en oeuvre. | |
FR2539652B1 (fr) | Procede et appareil d'enduction | |
FR2569837B1 (fr) | Procede et appareil de production d'un faisceau d'energie | |
FR2573917B1 (fr) | Appareil et procede de depot a la vapeur pour la realisation de semi-conducteurs | |
FR2548204B1 (fr) | Procede de transformation d'hydrocarbures | |
FR2583313B1 (fr) | Procede et appareil de revetement d'une nappe continue par raclage. | |
FR2550967B1 (fr) | Procede de nettoyage d'un generateur de vapeur | |
FR2573325B1 (fr) | Appareil et procede pour faire des depots de vapeur sur des plaquettes | |
FR2583572B1 (fr) | Procede et appareil pour fabriquer un film mince cristallin. | |
FR2528728B1 (fr) | Procede d'actionnement d'un appareil de criblage pneumatique et appareil de criblage pour la mise en oeuvre de ce procede | |
FR2520522B1 (fr) | Appareil et procede d'holographie a multiplication de phase | |
FR2486715B1 (fr) | Procede de realisation d'un dispositif semi-conducteur | |
FR2486716B1 (fr) | Procede de realisation d'un dispositif semi-conducteur | |
FR2428312B1 (fr) | Procede pour la realisation d'un dielectrique a structure en perowski | |
FR2544573B1 (fr) | Procede et dispositif de transcodage de la frequence d'echan tillonnage a quatre echantillons | |
FR2560218B1 (fr) | Appareil et procede de refroidissement d'un revetement sur une fil metallique | |
FR2502288B1 (fr) | Procede pour revetir un tube et tube obtenu | |
FR2541704B1 (fr) | Procede de realisation d'un sous-sol prefabrique | |
FR2651872B1 (fr) | Procede et appareil pour produire de la neige. | |
FR2557595B1 (fr) | Procede de depot de revetements et revetements obtenus par ledit procede | |
FR2545093B1 (fr) | Procede de formation d'un revetement en polyarylate | |
FR2567799B1 (fr) | Procede pour la realisation de modeles et d'outillages pour thermoformage, et dispositif pour sa mise en oeuvre | |
BE896651A (fr) | Procede et appareil pour produire des cables metalliques. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |