FR2573917B1 - Appareil et procede de depot a la vapeur pour la realisation de semi-conducteurs - Google Patents

Appareil et procede de depot a la vapeur pour la realisation de semi-conducteurs

Info

Publication number
FR2573917B1
FR2573917B1 FR858517519A FR8517519A FR2573917B1 FR 2573917 B1 FR2573917 B1 FR 2573917B1 FR 858517519 A FR858517519 A FR 858517519A FR 8517519 A FR8517519 A FR 8517519A FR 2573917 B1 FR2573917 B1 FR 2573917B1
Authority
FR
France
Prior art keywords
steam deposition
producing semiconductors
semiconductors
steam
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR858517519A
Other languages
English (en)
Other versions
FR2573917A1 (fr
Inventor
Keiichi Yoneyama
Kikuo Kaise
Masaaki Ayabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2573917A1 publication Critical patent/FR2573917A1/fr
Application granted granted Critical
Publication of FR2573917B1 publication Critical patent/FR2573917B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
FR858517519A 1984-11-27 1985-11-27 Appareil et procede de depot a la vapeur pour la realisation de semi-conducteurs Expired FR2573917B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59250243A JPH0639358B2 (ja) 1984-11-27 1984-11-27 有機金属気相成長装置

Publications (2)

Publication Number Publication Date
FR2573917A1 FR2573917A1 (fr) 1986-05-30
FR2573917B1 true FR2573917B1 (fr) 1989-03-17

Family

ID=17204968

Family Applications (1)

Application Number Title Priority Date Filing Date
FR858517519A Expired FR2573917B1 (fr) 1984-11-27 1985-11-27 Appareil et procede de depot a la vapeur pour la realisation de semi-conducteurs

Country Status (6)

Country Link
JP (1) JPH0639358B2 (fr)
KR (1) KR940011099B1 (fr)
DE (1) DE3541962C2 (fr)
FR (1) FR2573917B1 (fr)
GB (1) GB2168080B (fr)
NL (1) NL8503293A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2582552B2 (ja) * 1986-05-29 1997-02-19 三菱電機株式会社 イオン注入装置
JPS63144513A (ja) * 1986-12-09 1988-06-16 Nkk Corp バレル型エピタキシヤル成長装置
US5002011A (en) * 1987-04-14 1991-03-26 Kabushiki Kaisha Toshiba Vapor deposition apparatus
US4858558A (en) * 1988-01-25 1989-08-22 Nippon Kokan Kabushiki Kaisha Film forming apparatus
US5558721A (en) * 1993-11-15 1996-09-24 The Furukawa Electric Co., Ltd. Vapor phase growth system and a gas-drive motor
US5776256A (en) * 1996-10-01 1998-07-07 The United States Of America As Represented By The Secretary Of The Air Force Coating chamber planetary gear mirror rotating system
DE10261362B8 (de) * 2002-12-30 2008-08-28 Osram Opto Semiconductors Gmbh Substrat-Halter
US7182814B1 (en) * 2005-08-12 2007-02-27 Hong-Cing Lin Sample holder for physical vapor deposition equipment
KR100790729B1 (ko) * 2006-12-11 2008-01-02 삼성전기주식회사 화학 기상 증착 장치
JP5394092B2 (ja) * 2009-02-10 2014-01-22 東洋炭素株式会社 Ｃｖｄ装置
EP2767612A4 (fr) * 2011-10-14 2015-03-25 Toyo Tanso Co Dispositif de dépôt chimique en phase vapeur (cvd), procédé de fabrication d'un suscepteur dans lequel un dispositif de cvd est utilisé et suscepteur

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3598083A (en) * 1969-10-27 1971-08-10 Varian Associates Complex motion mechanism for thin film coating apparatuses
US3690290A (en) * 1971-04-29 1972-09-12 Motorola Inc Apparatus for providing epitaxial layers on a substrate
JPS5145337B2 (fr) * 1971-05-21 1976-12-03
CA956999A (en) * 1971-08-26 1974-10-29 Leland B. Wagner Pressure responsive device having stacked diaphragm assembly
JPS4841669A (fr) * 1971-09-28 1973-06-18
JPS5019015U (fr) * 1973-06-14 1975-03-03
CH599982A5 (fr) * 1975-09-02 1978-06-15 Balzers Patent Beteilig Ag

Also Published As

Publication number Publication date
GB2168080A (en) 1986-06-11
JPH0639358B2 (ja) 1994-05-25
GB8529157D0 (en) 1986-01-02
GB2168080B (en) 1988-05-11
JPS61127696A (ja) 1986-06-14
FR2573917A1 (fr) 1986-05-30
NL8503293A (nl) 1986-06-16
KR940011099B1 (ko) 1994-11-23
DE3541962A1 (de) 1986-06-12
KR860004456A (ko) 1986-06-23
DE3541962C2 (de) 1993-11-11

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Legal Events

Date Code Title Description
ST Notification of lapse