GB8529157D0 - Vapour deposition apparatus - Google Patents

Vapour deposition apparatus

Info

Publication number: GB8529157D0
Authority: GB; United Kingdom
Prior art keywords: deposition apparatus; vapour deposition; vapour; deposition
Prior art date: 1984-11-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

GB858529157A

Other versions

GB2168080B (en

GB2168080A (en

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sony Corp

Original Assignee

Sony Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-11-27

Filing date

1985-11-27

Publication date

1986-01-02

1985-11-27 Application filed by Sony Corp filed Critical Sony Corp

1986-01-02 Publication of GB8529157D0 publication Critical patent/GB8529157D0/en

1986-06-11 Publication of GB2168080A publication Critical patent/GB2168080A/en

1988-05-11 Application granted granted Critical

1988-05-11 Publication of GB2168080B publication Critical patent/GB2168080B/en

Status Expired legal-status Critical Current

Links

230000008021 deposition Effects 0.000 title 1

Classifications

- H01L21/205—
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated

Landscapes

Chemical & Material Sciences (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Mechanical Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Recrystallisation Techniques (AREA)

GB08529157A 1984-11-27 1985-11-27 Vapour deposition apparatus and epitaxial layer growth methods Expired GB2168080B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP59250243A JPH0639358B2 (en)	1984-11-27	1984-11-27	Metalorganic vapor phase growth equipment

Publications (3)

Publication Number	Publication Date
GB8529157D0 true GB8529157D0 (en)	1986-01-02
GB2168080A GB2168080A (en)	1986-06-11
GB2168080B GB2168080B (en)	1988-05-11

Family

ID=17204968

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08529157A Expired GB2168080B (en)	1984-11-27	1985-11-27	Vapour deposition apparatus and epitaxial layer growth methods

Country Status (6)

Country	Link
JP (1)	JPH0639358B2 (en)
KR (1)	KR940011099B1 (en)
DE (1)	DE3541962C2 (en)
FR (1)	FR2573917B1 (en)
GB (1)	GB2168080B (en)
NL (1)	NL8503293A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2582552B2 (en) *	1986-05-29	1997-02-19	三菱電機株式会社	Ion implanter
JPS63144513A (en) *	1986-12-09	1988-06-16	Nkk Corp	Barrel type epitaxial growth device
US5002011A (en) *	1987-04-14	1991-03-26	Kabushiki Kaisha Toshiba	Vapor deposition apparatus
US4858558A (en) *	1988-01-25	1989-08-22	Nippon Kokan Kabushiki Kaisha	Film forming apparatus
US5558721A (en) *	1993-11-15	1996-09-24	The Furukawa Electric Co., Ltd.	Vapor phase growth system and a gas-drive motor
US5776256A (en) *	1996-10-01	1998-07-07	The United States Of America As Represented By The Secretary Of The Air Force	Coating chamber planetary gear mirror rotating system
DE10261362B8 (en) *	2002-12-30	2008-08-28	Osram Opto Semiconductors Gmbh	Substrate holder
US7182814B1 (en) *	2005-08-12	2007-02-27	Hong-Cing Lin	Sample holder for physical vapor deposition equipment
KR100790729B1 (en) *	2006-12-11	2008-01-02	삼성전기주식회사	Chemical vapor deposition apparatus
JP5394092B2 (en) *	2009-02-10	2014-01-22	東洋炭素株式会社	CVD equipment
WO2013054876A1 (en) *	2011-10-14	2013-04-18	東洋炭素株式会社	Cvd device, method for manufacturing susceptor in which cvd device is used, and susceptor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3598083A (en) *	1969-10-27	1971-08-10	Varian Associates	Complex motion mechanism for thin film coating apparatuses
US3690290A (en) *	1971-04-29	1972-09-12	Motorola Inc	Apparatus for providing epitaxial layers on a substrate
JPS5145337B2 (en) *	1971-05-21	1976-12-03
CA956999A (en) *	1971-08-26	1974-10-29	Leland B. Wagner	Pressure responsive device having stacked diaphragm assembly
JPS4841669A (en) *	1971-09-28	1973-06-18
JPS5019015U (en) *	1973-06-14	1975-03-03
CH599982A5 (en) *	1975-09-02	1978-06-15	Balzers Patent Beteilig Ag

1984
- 1984-11-27 JP JP59250243A patent/JPH0639358B2/en not_active Expired - Lifetime
1985
- 1985-10-08 KR KR1019850007389A patent/KR940011099B1/en not_active IP Right Cessation
- 1985-11-27 DE DE3541962A patent/DE3541962C2/en not_active Expired - Fee Related
- 1985-11-27 FR FR858517519A patent/FR2573917B1/en not_active Expired
- 1985-11-27 NL NL8503293A patent/NL8503293A/en active Search and Examination
- 1985-11-27 GB GB08529157A patent/GB2168080B/en not_active Expired

Also Published As

Publication number	Publication date
KR860004456A (en)	1986-06-23
JPH0639358B2 (en)	1994-05-25
FR2573917B1 (en)	1989-03-17
DE3541962A1 (en)	1986-06-12
GB2168080B (en)	1988-05-11
FR2573917A1 (en)	1986-05-30
JPS61127696A (en)	1986-06-14
GB2168080A (en)	1986-06-11
NL8503293A (en)	1986-06-16
KR940011099B1 (en)	1994-11-23
DE3541962C2 (en)	1993-11-11

Legal Events

Date	Code	Title	Description
2003-07-16	PCNP	Patent ceased through non-payment of renewal fee

Publication	Publication Date	Title
GB2156578B (en)	1988-11-02	Vapour deposition apparatus
GB2148049B (en)	1987-12-02	Physical vapor deposition apparatus
GB2145741B (en)	1986-07-16	Reactive vapour deposition operation
GB8408023D0 (en)	1984-05-10	Vacuum coating apparatus
DE3564290D1 (en)	1988-09-15	Chemical vapour deposition process
GB2206608B (en)	1990-12-19	Vapor deposition apparatus
GB8429300D0 (en)	1984-12-27	Apparatus for coating
GB2119406B (en)	1986-01-29	Chemical vapour deposition apparatus
GB8528217D0 (en)	1985-12-18	Vapour deposition
GB8321536D0 (en)	1983-09-14	Deposition process
GB8529157D0 (en)	1986-01-02	Vapour deposition apparatus
GB2093072B (en)	1985-06-05	Apparatus for physical vapour deposition
GB8328858D0 (en)	1983-11-30	Metal vapour deposition
GB8809611D0 (en)	1988-05-25	Deposition apparatus
GB8506478D0 (en)	1985-04-17	Plasma chemical vapour deposition apparatus
GB2231586B (en)	1991-08-14	Deposition apparatus
GB2213835B (en)	1992-07-08	Deposition apparatus
GB8625410D0 (en)	1986-11-26	Vapour deposition apparatus
GB8334330D0 (en)	1984-02-01	Deposition apparatus
GB2155959B (en)	1987-02-04	Chemical vapour deposition
GB2141142B (en)	1986-06-25	Vapour deposition process
GB2155958B (en)	1987-06-03	Chemical vapour deposition
IE842221L (en)	1985-02-28	Chemical vapour deposition apparatus
GB2194372B (en)	1988-06-29	Deposit accepting apparatus
GB2138843B (en)	1986-01-08	Reactive vapour deposition