FR2458148A1 - Transistor pouvant etre commande par la lumiere - Google Patents

Transistor pouvant etre commande par la lumiere

Info

Publication number
FR2458148A1
FR2458148A1 FR8011333A FR8011333A FR2458148A1 FR 2458148 A1 FR2458148 A1 FR 2458148A1 FR 8011333 A FR8011333 A FR 8011333A FR 8011333 A FR8011333 A FR 8011333A FR 2458148 A1 FR2458148 A1 FR 2458148A1
Authority
FR
France
Prior art keywords
zone
light
transistor
controlled
controlled transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8011333A
Other languages
English (en)
Other versions
FR2458148B1 (fr
Inventor
Jeno Tihanyi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2458148A1 publication Critical patent/FR2458148A1/fr
Application granted granted Critical
Publication of FR2458148B1 publication Critical patent/FR2458148B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'INVENTION CONCERNE UN TRANSISTOR POUVANT ETRE COMMANDE PAR LA LUMIERE. CE TRANSISTOR COMPORTANT, DANS UN CORPS SEMI-CONDUCTEUR, UNE ZONE DE COLLECTEUR 1, UNE ZONE DE BASE 3 ET UNE ZONE D'EMETTEUR2 AVEC DES JONCTIONS PN 4,5 SITUEES ENTRE CES ZONES 1, 2, 3 COMPORTE AU MOINS UNE ELECTRODE AUXILIAIRE 9 DISPOSEE A LA SURFACE 12 ET QUI RECOUVRE AU MOINS UNE PARTIE DE LA ZONE DE BASE 3, S'ETENDANT AU VOISINAGE DE CETTE SURFACE ET AU MOINS UNE PARTIE DE LA ZONE DE COLLECTEUR 1 ET QUI PEUT ETRE PLACEE A UNE TENSION AUXILIAIRE DE MEME POLARITE QUE LA TENSION DE POLARISATION D'EMETTEUR. APPLICATION NOTAMMENT AUX TRANSISTORS COMMANDES PAR LA LUMIERE, A STRUCTURE PLANAR.
FR8011333A 1979-05-31 1980-05-21 Transistor pouvant etre commande par la lumiere Granted FR2458148A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792922250 DE2922250A1 (de) 1979-05-31 1979-05-31 Lichtsteuerbarer transistor

Publications (2)

Publication Number Publication Date
FR2458148A1 true FR2458148A1 (fr) 1980-12-26
FR2458148B1 FR2458148B1 (fr) 1983-12-23

Family

ID=6072203

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8011333A Granted FR2458148A1 (fr) 1979-05-31 1980-05-21 Transistor pouvant etre commande par la lumiere

Country Status (5)

Country Link
US (1) US4355320A (fr)
JP (1) JPS5846190B2 (fr)
DE (1) DE2922250A1 (fr)
FR (1) FR2458148A1 (fr)
GB (1) GB2051479B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8003906A (nl) * 1980-07-07 1982-02-01 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
DE3044341C2 (de) * 1980-11-25 1984-10-25 Siemens AG, 1000 Berlin und 8000 München Fototransistor
US4677452A (en) * 1981-10-26 1987-06-30 Intersil, Inc. Power field-effect transistor structures
JPS58184855U (ja) * 1982-06-01 1983-12-08 シャープ株式会社 ホトトランジスタ
IL70462A (en) * 1982-12-21 1987-09-16 Int Rectifier Corp A.c.solid state relay circuit and thyristor structure
JPS63183590U (fr) * 1987-05-19 1988-11-25
JPS6434591U (fr) * 1987-08-25 1989-03-02
US5994162A (en) * 1998-02-05 1999-11-30 International Business Machines Corporation Integrated circuit-compatible photo detector device and fabrication process
DE19844531B4 (de) 1998-09-29 2017-12-14 Prema Semiconductor Gmbh Verfahren zur Herstellung von Transistoren
JP2006506819A (ja) * 2002-11-20 2006-02-23 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 発光半導体素子と発光半導体素子の製造方法
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3663869A (en) * 1971-01-26 1972-05-16 Westinghouse Electric Corp Bipolar-unipolar transistor structure
GB1289953A (fr) * 1969-01-16 1972-09-20

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6709192A (fr) * 1967-07-01 1969-01-03
AU446887B2 (en) * 1970-11-26 1974-04-04 Matsushita Electric Industrial Co., Ltd. Field-effect semiconductor device
JPS5641186B2 (fr) * 1972-03-03 1981-09-26
DE2605641C3 (de) * 1976-02-12 1979-12-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Hochfrequenztransistor und Verfahren zu seiner Herstellung
US4107721A (en) * 1977-01-26 1978-08-15 Bell Telephone Laboratories, Incorporated Phototransistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1289953A (fr) * 1969-01-16 1972-09-20
US3663869A (en) * 1971-01-26 1972-05-16 Westinghouse Electric Corp Bipolar-unipolar transistor structure

Also Published As

Publication number Publication date
DE2922250A1 (de) 1980-12-11
GB2051479A (en) 1981-01-14
FR2458148B1 (fr) 1983-12-23
JPS55162282A (en) 1980-12-17
JPS5846190B2 (ja) 1983-10-14
GB2051479B (en) 1983-05-18
DE2922250C2 (fr) 1989-03-09
US4355320A (en) 1982-10-19

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