FR2356279A1 - Dispositif semi-conducteur auto-protege - Google Patents
Dispositif semi-conducteur auto-protegeInfo
- Publication number
- FR2356279A1 FR2356279A1 FR7708373A FR7708373A FR2356279A1 FR 2356279 A1 FR2356279 A1 FR 2356279A1 FR 7708373 A FR7708373 A FR 7708373A FR 7708373 A FR7708373 A FR 7708373A FR 2356279 A1 FR2356279 A1 FR 2356279A1
- Authority
- FR
- France
- Prior art keywords
- region
- trigger
- self
- semiconductor device
- protected semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000015556 catabolic process Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Abstract
Dispositif dont la région de gâchette a une tension de rupture inférieure à celle du reste du dispositif. Il comprend une région semi-conductrice principale 34, une région de gâchette 30 recouvrant une jonction semi-conductrice associée à une zone d'épuisement 38, 40, et une région gravée 36, dans la région de gâchette s'étendant dans la région d'épuisement jusqu'à une profondeur suffisante pour réduire la tension de rupture de cette région de gâchette au-dessous de la tension de rupture de la région semi-conductrice principale. Application aux thyristors.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/669,403 US4087834A (en) | 1976-03-22 | 1976-03-22 | Self-protecting semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2356279A1 true FR2356279A1 (fr) | 1978-01-20 |
FR2356279B1 FR2356279B1 (fr) | 1983-07-01 |
Family
ID=24686213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7708373A Granted FR2356279A1 (fr) | 1976-03-22 | 1977-03-21 | Dispositif semi-conducteur auto-protege |
Country Status (6)
Country | Link |
---|---|
US (1) | US4087834A (fr) |
JP (1) | JPS52126181A (fr) |
DE (1) | DE2712114C2 (fr) |
FR (1) | FR2356279A1 (fr) |
GB (1) | GB1579938A (fr) |
SE (1) | SE427884B (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4812892A (en) * | 1978-03-30 | 1989-03-14 | Siemens Aktiengesellschaft | Light controllable thyristors |
DE2945347A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb |
DE2945380A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Triac mit einem mehrschichten-halbleiterkoerper |
DE2945366A1 (de) * | 1979-11-09 | 1981-05-14 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitter-kurzschluessen |
US4261000A (en) * | 1980-05-23 | 1981-04-07 | General Electric Company | High voltage semiconductor device having an improved dv/dt capability |
IE54111B1 (en) * | 1982-03-11 | 1989-06-21 | Westinghouse Electric Corp | Laser treatment of thyristor to provide overvoltage self-protection |
JPS594075A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | サイリスタ |
US4555845A (en) * | 1982-10-13 | 1985-12-03 | Westinghouse Electric Corp. | Temperature stable self-protected thyristor and method of producing |
DE3240564A1 (de) * | 1982-11-03 | 1984-05-03 | Licentia Patent-Verwaltungs-Gmbh | Steuerbares halbleiterschaltelement |
IE840248L (en) * | 1983-02-18 | 1984-08-18 | Westinghouse Electric Corp | Light activated power transistor |
US4514898A (en) * | 1983-02-18 | 1985-05-07 | Westinghouse Electric Corp. | Method of making a self protected thyristor |
US4516315A (en) * | 1983-05-09 | 1985-05-14 | Westinghouse Electric Corp. | Method of making a self-protected thyristor |
DE3465222D1 (en) * | 1983-05-26 | 1987-09-10 | Gen Electric | Voltage breakover protected thyristor having field-containing layer in avalanche voltage breakover zone |
CA1272811A (fr) * | 1985-04-24 | 1990-08-14 | Hitachi, Ltd. | Dispositif semiconducteur du type autoprotege contre les surtensions |
EP0320738A3 (fr) * | 1987-12-17 | 1991-02-06 | Siemens Aktiengesellschaft | Thyristor supportant les amorçages par retournement |
DE102014009044B4 (de) | 2014-06-18 | 2020-04-09 | U.M. Gewerbeimmobilien Gmbh & Co. Kg | Kupplungsteil für eine Schnellkupplung für Hochdruckhydraulikleitungen |
DE102014009046A1 (de) | 2014-06-18 | 2015-12-24 | Voswinkel Entwicklungs- Und Verwaltungs-Gmbh & Co. Kg | Kupplungsteil für eine Schnellkupplung für Hochdruckhydraulikleitungen |
DE102014009063B4 (de) | 2014-06-18 | 2020-04-09 | U.M. Gewerbeimmobilien Gmbh & Co. Kg | Kupplungsteil für eine Schnellkupplung für Hochdruckhydraulikleitungen |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1518155A (fr) * | 1966-04-09 | 1968-03-22 | Licentia Gmbh | élément de montage à semi-conducteur |
US3408545A (en) * | 1964-07-27 | 1968-10-29 | Gen Electric | Semiconductor rectifier with improved turn-on and turn-off characteristics |
CH473476A (de) * | 1967-08-05 | 1969-05-31 | Siemens Ag | Photothyristor und Verfahren zu seiner Herstellung |
DE2408079A1 (de) * | 1974-01-18 | 1975-07-24 | Bbc Brown Boveri & Cie | Thyristor |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1107899A (en) * | 1966-04-15 | 1968-03-27 | Westinghouse Brake & Signal | Semiconductor controllable rectifier devices |
US3440501A (en) * | 1967-02-02 | 1969-04-22 | Gen Electric | Double-triggering semiconductor controlled rectifier |
US3486088A (en) * | 1968-05-22 | 1969-12-23 | Nat Electronics Inc | Regenerative gate thyristor construction |
US3622845A (en) * | 1969-05-01 | 1971-11-23 | Gen Electric | Scr with amplified emitter gate |
BE758745A (fr) * | 1969-11-10 | 1971-05-10 | Westinghouse Electric Corp | Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs |
JPS508315B1 (fr) * | 1970-02-20 | 1975-04-03 | ||
USRE27440E (en) | 1970-10-27 | 1972-07-18 | Semiconductor rectifier with improved turn-on and turn-off characteristics | |
DE2141627C3 (de) * | 1971-08-19 | 1979-06-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
US3922774A (en) * | 1972-05-01 | 1975-12-02 | Communications Satellite Corp | Tantalum pentoxide anti-reflective coating |
US3872493A (en) * | 1972-08-25 | 1975-03-18 | Westinghouse Electric Corp | Selective irradiation of junctioned semiconductor devices |
US3893153A (en) * | 1974-01-10 | 1975-07-01 | Westinghouse Electric Corp | Light activated thyristor with high di/dt capability |
DE2407696C3 (de) * | 1974-02-18 | 1979-02-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
-
1976
- 1976-03-22 US US05/669,403 patent/US4087834A/en not_active Expired - Lifetime
-
1977
- 1977-03-18 JP JP2936777A patent/JPS52126181A/ja active Granted
- 1977-03-19 DE DE2712114A patent/DE2712114C2/de not_active Expired
- 1977-03-21 FR FR7708373A patent/FR2356279A1/fr active Granted
- 1977-03-21 SE SE7703219A patent/SE427884B/xx not_active IP Right Cessation
- 1977-03-21 GB GB11791/77A patent/GB1579938A/en not_active Expired
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3408545A (en) * | 1964-07-27 | 1968-10-29 | Gen Electric | Semiconductor rectifier with improved turn-on and turn-off characteristics |
FR1518155A (fr) * | 1966-04-09 | 1968-03-22 | Licentia Gmbh | élément de montage à semi-conducteur |
CH473476A (de) * | 1967-08-05 | 1969-05-31 | Siemens Ag | Photothyristor und Verfahren zu seiner Herstellung |
DE2408079A1 (de) * | 1974-01-18 | 1975-07-24 | Bbc Brown Boveri & Cie | Thyristor |
Also Published As
Publication number | Publication date |
---|---|
DE2712114C2 (de) | 1985-05-15 |
DE2712114A1 (de) | 1977-10-06 |
SE427884B (sv) | 1983-05-09 |
GB1579938A (en) | 1980-11-26 |
JPS5643665B2 (fr) | 1981-10-14 |
FR2356279B1 (fr) | 1983-07-01 |
SE7703219L (sv) | 1977-09-23 |
JPS52126181A (en) | 1977-10-22 |
US4087834A (en) | 1978-05-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |