FR2452791A1 - Transistor a effet de champ a frequence de coupure elevee - Google Patents

Transistor a effet de champ a frequence de coupure elevee

Info

Publication number
FR2452791A1
FR2452791A1 FR7907803A FR7907803A FR2452791A1 FR 2452791 A1 FR2452791 A1 FR 2452791A1 FR 7907803 A FR7907803 A FR 7907803A FR 7907803 A FR7907803 A FR 7907803A FR 2452791 A1 FR2452791 A1 FR 2452791A1
Authority
FR
France
Prior art keywords
alxga1
gallium arsenide
xas
gaas
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7907803A
Other languages
English (en)
Other versions
FR2452791B1 (fr
Inventor
Daniel Delagebeaudeuf
Trong Linh Nuyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7907803A priority Critical patent/FR2452791A1/fr
Priority to FR7922301A priority patent/FR2465317A2/fr
Priority to EP80400343A priority patent/EP0017531B1/fr
Priority to DE8080400343T priority patent/DE3068161D1/de
Priority to JP4013280A priority patent/JPS55160473A/ja
Publication of FR2452791A1 publication Critical patent/FR2452791A1/fr
Priority to US06/353,100 priority patent/US4471366A/en
Application granted granted Critical
Publication of FR2452791B1 publication Critical patent/FR2452791B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

L'INVENTION CONCERNE LES DISPOSITIFS A FREQUENCE DE COUPURE ELEVEE ET PLUS PARTICULIEREMENT LES TRANSISTORS A EFFET DE CHAMP A HETERO-JONCTION A ACCUMULATION DE PORTEURS MAJORITAIRES. LES TRANSISTORS SELON L'INVENTION UTILISENT LES PROPRIETES DES JONCTIONS GAASALGAAS DE MEME TYPE, DOPEES N, GAAS ETANT FAIBLEMENT DOPE, FAVORABLES A UNE GRANDE MOBILITE DES CHARGES DANS LA COUCHE D'ACCUMULATION: UNE STRUCTURE SELON LAQUELLE LES REGIONS DE SOURCE ET DE DRAIN SONT PARTIELLEMENT RECOUVERTES PAR LA REGION DE GRILLE DIMINUE LES RESISTANCES D'ACCES ET AUGMENTE LES FREQUENCES DE TRANSITION. APPLICATION AUX TRANSISTORS HYPERFREQUENCES POUR TELECOMMUNICATIONS ET CIRCUITS INTEGRES.
FR7907803A 1979-03-28 1979-03-28 Transistor a effet de champ a frequence de coupure elevee Granted FR2452791A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7907803A FR2452791A1 (fr) 1979-03-28 1979-03-28 Transistor a effet de champ a frequence de coupure elevee
FR7922301A FR2465317A2 (fr) 1979-03-28 1979-09-06 Transistor a effet de champ a frequence de coupure elevee
EP80400343A EP0017531B1 (fr) 1979-03-28 1980-03-14 Transistor à effet de champ à fréquence de coupure élevée et son procédé de réalisation
DE8080400343T DE3068161D1 (en) 1979-03-28 1980-03-14 Field-effect transistor with high cut-off frequency and method of making it
JP4013280A JPS55160473A (en) 1979-03-28 1980-03-28 Semiconductor device and method of fabricating same
US06/353,100 US4471366A (en) 1979-03-28 1982-03-01 Field effect transistor with high cut-off frequency and process for forming same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7907803A FR2452791A1 (fr) 1979-03-28 1979-03-28 Transistor a effet de champ a frequence de coupure elevee

Publications (2)

Publication Number Publication Date
FR2452791A1 true FR2452791A1 (fr) 1980-10-24
FR2452791B1 FR2452791B1 (fr) 1982-06-04

Family

ID=9223666

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7907803A Granted FR2452791A1 (fr) 1979-03-28 1979-03-28 Transistor a effet de champ a frequence de coupure elevee

Country Status (1)

Country Link
FR (1) FR2452791A1 (fr)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2268363A1 (fr) * 1974-04-17 1975-11-14 Matsushita Electronics Corp

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2268363A1 (fr) * 1974-04-17 1975-11-14 Matsushita Electronics Corp

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/78 *

Also Published As

Publication number Publication date
FR2452791B1 (fr) 1982-06-04

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