JPS6451666A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS6451666A JPS6451666A JP20954187A JP20954187A JPS6451666A JP S6451666 A JPS6451666 A JP S6451666A JP 20954187 A JP20954187 A JP 20954187A JP 20954187 A JP20954187 A JP 20954187A JP S6451666 A JPS6451666 A JP S6451666A
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- gate electrode
- compound semiconductor
- semiconductor active
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To reduce feedback capacitance, and improve gain, by forming a structure wherein, between a gate electrode and a drain electrode, a compound semiconductor active layer of one conductivity type is dug in the form of a trench (recessed part) on the gate electrode edge. CONSTITUTION:Between a gate electrode G and a drain electrode D, a trench part 20 is formed in a compound semiconductor active layer 12 on the gate electrode edge. Thereby the sectional area of a boundary surface, on which a depletion layer and an active layer generated in the compound semiconductor active layer 12 of one conductivity type by a Schottky work function are in contact, can be reduced. As the result, the further improvement of functional efficiency of a GaAs FET or a HEMT for high frequency communication amplification is enabled by reducing the feedback capacitance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20954187A JPS6451666A (en) | 1987-08-24 | 1987-08-24 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20954187A JPS6451666A (en) | 1987-08-24 | 1987-08-24 | Semiconductor device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6451666A true JPS6451666A (en) | 1989-02-27 |
Family
ID=16574513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20954187A Pending JPS6451666A (en) | 1987-08-24 | 1987-08-24 | Semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6451666A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5139968A (en) * | 1989-03-03 | 1992-08-18 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a t-shaped gate electrode |
US5539228A (en) * | 1992-07-28 | 1996-07-23 | Hughes Aircraft Company | Field-effect transistor with high breakdown voltage provided by channel recess offset toward drain |
KR100710671B1 (en) * | 2005-12-09 | 2007-04-24 | 현대모비스 주식회사 | Knee-bolster for glove box of vehicles |
-
1987
- 1987-08-24 JP JP20954187A patent/JPS6451666A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5139968A (en) * | 1989-03-03 | 1992-08-18 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a t-shaped gate electrode |
US5539228A (en) * | 1992-07-28 | 1996-07-23 | Hughes Aircraft Company | Field-effect transistor with high breakdown voltage provided by channel recess offset toward drain |
KR100710671B1 (en) * | 2005-12-09 | 2007-04-24 | 현대모비스 주식회사 | Knee-bolster for glove box of vehicles |
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