JPS6451666A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS6451666A
JPS6451666A JP20954187A JP20954187A JPS6451666A JP S6451666 A JPS6451666 A JP S6451666A JP 20954187 A JP20954187 A JP 20954187A JP 20954187 A JP20954187 A JP 20954187A JP S6451666 A JPS6451666 A JP S6451666A
Authority
JP
Japan
Prior art keywords
active layer
gate electrode
compound semiconductor
semiconductor active
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20954187A
Other languages
Japanese (ja)
Inventor
Yoshio Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20954187A priority Critical patent/JPS6451666A/en
Publication of JPS6451666A publication Critical patent/JPS6451666A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To reduce feedback capacitance, and improve gain, by forming a structure wherein, between a gate electrode and a drain electrode, a compound semiconductor active layer of one conductivity type is dug in the form of a trench (recessed part) on the gate electrode edge. CONSTITUTION:Between a gate electrode G and a drain electrode D, a trench part 20 is formed in a compound semiconductor active layer 12 on the gate electrode edge. Thereby the sectional area of a boundary surface, on which a depletion layer and an active layer generated in the compound semiconductor active layer 12 of one conductivity type by a Schottky work function are in contact, can be reduced. As the result, the further improvement of functional efficiency of a GaAs FET or a HEMT for high frequency communication amplification is enabled by reducing the feedback capacitance.
JP20954187A 1987-08-24 1987-08-24 Semiconductor device and its manufacture Pending JPS6451666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20954187A JPS6451666A (en) 1987-08-24 1987-08-24 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20954187A JPS6451666A (en) 1987-08-24 1987-08-24 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS6451666A true JPS6451666A (en) 1989-02-27

Family

ID=16574513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20954187A Pending JPS6451666A (en) 1987-08-24 1987-08-24 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS6451666A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139968A (en) * 1989-03-03 1992-08-18 Mitsubishi Denki Kabushiki Kaisha Method of producing a t-shaped gate electrode
US5539228A (en) * 1992-07-28 1996-07-23 Hughes Aircraft Company Field-effect transistor with high breakdown voltage provided by channel recess offset toward drain
KR100710671B1 (en) * 2005-12-09 2007-04-24 현대모비스 주식회사 Knee-bolster for glove box of vehicles

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139968A (en) * 1989-03-03 1992-08-18 Mitsubishi Denki Kabushiki Kaisha Method of producing a t-shaped gate electrode
US5539228A (en) * 1992-07-28 1996-07-23 Hughes Aircraft Company Field-effect transistor with high breakdown voltage provided by channel recess offset toward drain
KR100710671B1 (en) * 2005-12-09 2007-04-24 현대모비스 주식회사 Knee-bolster for glove box of vehicles

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