FR2433833A1 - Semi-conducteur comportant des regions de silicium en forme de projections a profil particulier et son procede de fabrication - Google Patents
Semi-conducteur comportant des regions de silicium en forme de projections a profil particulier et son procede de fabricationInfo
- Publication number
- FR2433833A1 FR2433833A1 FR7918558A FR7918558A FR2433833A1 FR 2433833 A1 FR2433833 A1 FR 2433833A1 FR 7918558 A FR7918558 A FR 7918558A FR 7918558 A FR7918558 A FR 7918558A FR 2433833 A1 FR2433833 A1 FR 2433833A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor
- substrate
- manufacturing
- silicon regions
- profile projections
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Semi-conducteur utilisable à titre de transistor bipolaire et transistor à effet de champ. Selon l'invention, le semi-conducteur comprend un substrat 11, un semi-conducteur de silicium, un film oxydé 12, des régions de silicium polycristallin dopées 13, 14, 15 sélectivement formées sur le substrat, et un film d'isolation 16 recouvrant les régions 13 à 15. La région 13 a une forme de mésa présentant un coefficient de gradient négatif entre le substrat et le sommet du mésa. L'invention s'applique en particulier à la fabrication de circuits intégrés à hautes performances.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8799778A JPS5515231A (en) | 1978-07-19 | 1978-07-19 | Manufacturing method of semiconductor device |
JP8799678A JPS5515230A (en) | 1978-07-19 | 1978-07-19 | Semiconductor device and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2433833A1 true FR2433833A1 (fr) | 1980-03-14 |
FR2433833B1 FR2433833B1 (fr) | 1984-01-13 |
Family
ID=26429214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7918558A Granted FR2433833A1 (fr) | 1978-07-19 | 1979-07-18 | Semi-conducteur comportant des regions de silicium en forme de projections a profil particulier et son procede de fabrication |
Country Status (6)
Country | Link |
---|---|
US (1) | US4379001A (fr) |
CA (1) | CA1129118A (fr) |
DE (1) | DE2928923A1 (fr) |
FR (1) | FR2433833A1 (fr) |
GB (1) | GB2030002B (fr) |
NL (1) | NL189102C (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0029887A1 (fr) * | 1979-12-03 | 1981-06-10 | International Business Machines Corporation | Procédé de fabrication d'un transistor PNP bipolaire vertical et transistor ainsi obtenu |
EP0056530A2 (fr) * | 1981-01-12 | 1982-07-28 | Kabushiki Kaisha Toshiba | Procédé pour la formation d'une configuration en silicium polycristallin |
WO1984004204A1 (fr) * | 1983-04-18 | 1984-10-25 | Ncr Co | Procede de fabrication d'un dispositif a semiconducteur de petites dimensions |
EP0300514A1 (fr) * | 1987-03-18 | 1989-01-25 | Koninklijke Philips Electronics N.V. | Dispositif semi-conducteur ayant une structure de contact latérale et son procédé de fabrication |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56146246A (en) * | 1980-04-14 | 1981-11-13 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS57194572A (en) * | 1981-05-27 | 1982-11-30 | Clarion Co Ltd | Semiconductor device and manufacture thereof |
US4465528A (en) * | 1981-07-15 | 1984-08-14 | Fujitsu Limited | Method of producing a walled emitter semiconductor device |
US4551906A (en) * | 1983-12-12 | 1985-11-12 | International Business Machines Corporation | Method for making self-aligned lateral bipolar transistors |
US4546535A (en) * | 1983-12-12 | 1985-10-15 | International Business Machines Corporation | Method of making submicron FET structure |
US4636834A (en) * | 1983-12-12 | 1987-01-13 | International Business Machines Corporation | Submicron FET structure and method of making |
NL8402223A (nl) * | 1984-07-13 | 1986-02-03 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en inrichting, vervaardigd door toepassing daarvan. |
NL8402859A (nl) * | 1984-09-18 | 1986-04-16 | Philips Nv | Werkwijze voor het vervaardigen van submicrongroeven in bijvoorbeeld halfgeleidermateriaal en met deze werkwijze verkregen inrichtingen. |
US4745079A (en) * | 1987-03-30 | 1988-05-17 | Motorola, Inc. | Method for fabricating MOS transistors having gates with different work functions |
US5675164A (en) * | 1995-06-07 | 1997-10-07 | International Business Machines Corporation | High performance multi-mesa field effect transistor |
KR100329605B1 (ko) * | 1995-09-25 | 2002-11-04 | 주식회사 하이닉스반도체 | 반도체소자의금속배선제조방법 |
US6309975B1 (en) | 1997-03-14 | 2001-10-30 | Micron Technology, Inc. | Methods of making implanted structures |
US7247578B2 (en) * | 2003-12-30 | 2007-07-24 | Intel Corporation | Method of varying etch selectivities of a film |
US20090170331A1 (en) * | 2007-12-27 | 2009-07-02 | International Business Machines Corporation | Method of forming a bottle-shaped trench by ion implantation |
KR101631165B1 (ko) * | 2009-12-14 | 2016-06-17 | 삼성전자주식회사 | 반도체 셀 구조체의 형성방법, 상기 반도체 셀 구조체를 포함하는 반도체 장치의 형성 방법 및 상기 반도체 장치를 포함하는 반도체 모듈의 형성방법 |
FR3051966B1 (fr) | 2016-05-27 | 2018-11-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de formation d’un motif de guidage fonctionnalise pour un procede de grapho-epitaxie |
FR3051965A1 (fr) | 2016-05-27 | 2017-12-01 | Commissariat Energie Atomique | Procede de formation d’un motif de guidage fonctionnalise pour un procede de grapho-epitaxie |
FR3051964B1 (fr) * | 2016-05-27 | 2018-11-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de formation d’un motif de guidage fonctionnalise pour un procede de grapho-epitaxie |
CN110471099B (zh) * | 2019-06-28 | 2023-03-10 | 上海芬创信息科技有限公司 | 一种离子传感器及其制备方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1417170A (en) * | 1972-12-22 | 1975-12-10 | Mullard Ltd | Methods of manufacturing semiconductor devices |
US4074304A (en) * | 1974-10-04 | 1978-02-14 | Nippon Electric Company, Ltd. | Semiconductor device having a miniature junction area and process for fabricating same |
JPS5928992B2 (ja) * | 1975-02-14 | 1984-07-17 | 日本電信電話株式会社 | Mosトランジスタおよびその製造方法 |
JPS51127682A (en) * | 1975-04-30 | 1976-11-06 | Fujitsu Ltd | Manufacturing process of semiconductor device |
US4162506A (en) * | 1976-04-27 | 1979-07-24 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor integrated circuit device with dual thickness poly-silicon wiring |
JPS539469A (en) * | 1976-07-15 | 1978-01-27 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device having electrode of stepped structure and its production |
NL7703941A (nl) * | 1977-04-12 | 1978-10-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgelei- derinrichting en inrichting, vervaardigd door toepassing van de werkwijze. |
JPS53132275A (en) * | 1977-04-25 | 1978-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its production |
FR2417853A1 (fr) * | 1978-02-17 | 1979-09-14 | Thomson Csf | Procede de realisation d'un transistor de type mos et transistor realise selon ce procede |
JPS54140483A (en) * | 1978-04-21 | 1979-10-31 | Nec Corp | Semiconductor device |
US4157269A (en) * | 1978-06-06 | 1979-06-05 | International Business Machines Corporation | Utilizing polysilicon diffusion sources and special masking techniques |
US4290185A (en) * | 1978-11-03 | 1981-09-22 | Mostek Corporation | Method of making an extremely low current load device for integrated circuit |
JPS5586151A (en) * | 1978-12-23 | 1980-06-28 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor integrated circuit |
US4274891A (en) * | 1979-06-29 | 1981-06-23 | International Business Machines Corporation | Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition |
US4234357A (en) * | 1979-07-16 | 1980-11-18 | Trw Inc. | Process for manufacturing emitters by diffusion from polysilicon |
US4240845A (en) * | 1980-02-04 | 1980-12-23 | International Business Machines Corporation | Method of fabricating random access memory device |
-
1979
- 1979-07-17 CA CA331,965A patent/CA1129118A/fr not_active Expired
- 1979-07-18 GB GB7924980A patent/GB2030002B/en not_active Expired
- 1979-07-18 FR FR7918558A patent/FR2433833A1/fr active Granted
- 1979-07-18 US US06/058,417 patent/US4379001A/en not_active Expired - Lifetime
- 1979-07-18 DE DE19792928923 patent/DE2928923A1/de active Granted
- 1979-07-19 NL NLAANVRAGE7905607,A patent/NL189102C/xx not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0029887A1 (fr) * | 1979-12-03 | 1981-06-10 | International Business Machines Corporation | Procédé de fabrication d'un transistor PNP bipolaire vertical et transistor ainsi obtenu |
EP0056530A2 (fr) * | 1981-01-12 | 1982-07-28 | Kabushiki Kaisha Toshiba | Procédé pour la formation d'une configuration en silicium polycristallin |
EP0056530A3 (en) * | 1981-01-12 | 1982-08-18 | Tokyo Shibaura Denki Kabushiki Kaisha | Process of forming a polycrystalline silicon pattern |
US4438556A (en) * | 1981-01-12 | 1984-03-27 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions |
WO1984004204A1 (fr) * | 1983-04-18 | 1984-10-25 | Ncr Co | Procede de fabrication d'un dispositif a semiconducteur de petites dimensions |
EP0300514A1 (fr) * | 1987-03-18 | 1989-01-25 | Koninklijke Philips Electronics N.V. | Dispositif semi-conducteur ayant une structure de contact latérale et son procédé de fabrication |
Also Published As
Publication number | Publication date |
---|---|
US4379001A (en) | 1983-04-05 |
GB2030002A (en) | 1980-03-26 |
NL189102C (nl) | 1993-01-04 |
DE2928923A1 (de) | 1980-02-07 |
DE2928923C2 (fr) | 1989-04-06 |
GB2030002B (en) | 1983-03-30 |
FR2433833B1 (fr) | 1984-01-13 |
NL7905607A (nl) | 1980-01-22 |
CA1129118A (fr) | 1982-08-03 |
NL189102B (nl) | 1992-08-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
CA | Change of address |