FR2428918A1 - Switching transistor with reduced current in conducting mode - uses two surfaces on substrate for twin emitter short circuiting one (NL 18.12.79) - Google Patents
Switching transistor with reduced current in conducting mode - uses two surfaces on substrate for twin emitter short circuiting one (NL 18.12.79)Info
- Publication number
- FR2428918A1 FR2428918A1 FR7915122A FR7915122A FR2428918A1 FR 2428918 A1 FR2428918 A1 FR 2428918A1 FR 7915122 A FR7915122 A FR 7915122A FR 7915122 A FR7915122 A FR 7915122A FR 2428918 A1 FR2428918 A1 FR 2428918A1
- Authority
- FR
- France
- Prior art keywords
- emitter
- region
- switching transistor
- twin
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Abstract
The switching transistor has a selective short-circuited anode emitter to reduce the current flow when switched on. The central section has one or more emitter fingers formed by a mesh of grid and cathode emitter structure. The current carrying capacity is relatively high. There is a first emitter region (12) of a given conductivity on a first suface. A first base region (14) of a second type conductivity near to the cathode region (22) forming a PN junction. There is a second base region on a second surface with a control region. The second emitter region is short-circuited.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91556378A | 1978-06-14 | 1978-06-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2428918A1 true FR2428918A1 (en) | 1980-01-11 |
FR2428918B1 FR2428918B1 (en) | 1984-06-29 |
Family
ID=25435941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7915122A Granted FR2428918A1 (en) | 1978-06-14 | 1979-06-13 | Switching transistor with reduced current in conducting mode - uses two surfaces on substrate for twin emitter short circuiting one (NL 18.12.79) |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5516497A (en) |
DE (1) | DE2923693A1 (en) |
FR (1) | FR2428918A1 (en) |
NL (1) | NL190389C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0061046A1 (en) * | 1981-03-14 | 1982-09-29 | Semikron, Gesellschaft Für Gleichrichterbau Und Elektronik M.B.H. | Reversely non-conducting thyristor |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57150120U (en) * | 1981-03-17 | 1982-09-21 | ||
DE3531631A1 (en) * | 1985-09-05 | 1987-03-05 | Licentia Gmbh | ASYMMETRIC THYRISTOR AND METHOD FOR THE PRODUCTION THEREOF |
DE3742638A1 (en) * | 1987-12-16 | 1989-06-29 | Semikron Elektronik Gmbh | GTO thyristor |
JPH02124295A (en) * | 1988-10-28 | 1990-05-11 | Ushio Kk | Multishaft boring device |
DE4218398A1 (en) * | 1992-06-04 | 1993-12-09 | Asea Brown Boveri | High current pulse thyristor with two opposite semiconductor main faces - has GTO structure with highly doped emitter distributed over first face in form of narrow cathode fingers |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3513367A (en) * | 1968-03-06 | 1970-05-19 | Westinghouse Electric Corp | High current gate controlled switches |
FR2043541A7 (en) * | 1969-05-20 | 1971-02-19 | Bbc Brown Boveri & Cie | |
DE2041727A1 (en) * | 1969-08-27 | 1971-03-04 | Westinghouse Electric Corp | Switching device controllable by means of a gate electrode |
DE2056806A1 (en) * | 1970-11-02 | 1972-05-25 | Bbc Brown Boveri & Cie | Bistable semiconductor component |
DE2217604A1 (en) * | 1971-04-13 | 1972-11-16 | Sony Corp., Tokio | Gate-controlled semiconductor switch |
FR2164901A1 (en) * | 1971-12-24 | 1973-08-03 | Semikron Gleichrichterbau | |
FR2284193A1 (en) * | 1974-09-06 | 1976-04-02 | Rca Corp | Semiconductor rectifier module - with gate control and low cut off current, has regenerative and non-regenerative section electrodes on separated surfaces |
FR2367354A1 (en) * | 1976-10-08 | 1978-05-05 | Bbc Brown Boveri & Cie | THYRISTOR WITH TRANSMITTER SHORT CIRCUITS AND ITS APPLICATION |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3504242A (en) * | 1967-08-11 | 1970-03-31 | Westinghouse Electric Corp | Switching power transistor with thyristor overload capacity |
US3619738A (en) * | 1969-10-13 | 1971-11-09 | Tokyo Shibaura Electric Co | Semiconductor device with improved connection to control electrode region |
US3914781A (en) * | 1971-04-13 | 1975-10-21 | Sony Corp | Gate controlled rectifier |
JPS54111790A (en) * | 1978-02-22 | 1979-09-01 | Hitachi Ltd | Semiconductor switchgear |
-
1979
- 1979-06-12 JP JP7310879A patent/JPS5516497A/en active Granted
- 1979-06-12 DE DE19792923693 patent/DE2923693A1/en active Granted
- 1979-06-12 NL NL7904589A patent/NL190389C/en not_active Application Discontinuation
- 1979-06-13 FR FR7915122A patent/FR2428918A1/en active Granted
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3513367A (en) * | 1968-03-06 | 1970-05-19 | Westinghouse Electric Corp | High current gate controlled switches |
FR2043541A7 (en) * | 1969-05-20 | 1971-02-19 | Bbc Brown Boveri & Cie | |
DE2041727A1 (en) * | 1969-08-27 | 1971-03-04 | Westinghouse Electric Corp | Switching device controllable by means of a gate electrode |
DE2056806A1 (en) * | 1970-11-02 | 1972-05-25 | Bbc Brown Boveri & Cie | Bistable semiconductor component |
DE2217604A1 (en) * | 1971-04-13 | 1972-11-16 | Sony Corp., Tokio | Gate-controlled semiconductor switch |
FR2164901A1 (en) * | 1971-12-24 | 1973-08-03 | Semikron Gleichrichterbau | |
FR2284193A1 (en) * | 1974-09-06 | 1976-04-02 | Rca Corp | Semiconductor rectifier module - with gate control and low cut off current, has regenerative and non-regenerative section electrodes on separated surfaces |
FR2367354A1 (en) * | 1976-10-08 | 1978-05-05 | Bbc Brown Boveri & Cie | THYRISTOR WITH TRANSMITTER SHORT CIRCUITS AND ITS APPLICATION |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0061046A1 (en) * | 1981-03-14 | 1982-09-29 | Semikron, Gesellschaft Für Gleichrichterbau Und Elektronik M.B.H. | Reversely non-conducting thyristor |
Also Published As
Publication number | Publication date |
---|---|
NL7904589A (en) | 1979-12-18 |
NL190389B (en) | 1993-09-01 |
JPS5516497A (en) | 1980-02-05 |
JPS6220713B2 (en) | 1987-05-08 |
NL190389C (en) | 1994-02-01 |
DE2923693C2 (en) | 1990-12-06 |
DE2923693A1 (en) | 1980-01-03 |
FR2428918B1 (en) | 1984-06-29 |
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