JPS5516497A - Gate turnnoff semiconductor switching device - Google Patents

Gate turnnoff semiconductor switching device

Info

Publication number
JPS5516497A
JPS5516497A JP7310879A JP7310879A JPS5516497A JP S5516497 A JPS5516497 A JP S5516497A JP 7310879 A JP7310879 A JP 7310879A JP 7310879 A JP7310879 A JP 7310879A JP S5516497 A JPS5516497 A JP S5516497A
Authority
JP
Japan
Prior art keywords
turnnoff
gate
switching device
semiconductor switching
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7310879A
Other languages
Japanese (ja)
Other versions
JPS6220713B2 (en
Inventor
Oobiru Shieifuaa Piitaa
Deyuan Uoorei Eruden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS5516497A publication Critical patent/JPS5516497A/en
Publication of JPS6220713B2 publication Critical patent/JPS6220713B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP7310879A 1978-06-14 1979-06-12 Gate turnnoff semiconductor switching device Granted JPS5516497A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US91556378A 1978-06-14 1978-06-14

Publications (2)

Publication Number Publication Date
JPS5516497A true JPS5516497A (en) 1980-02-05
JPS6220713B2 JPS6220713B2 (en) 1987-05-08

Family

ID=25435941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7310879A Granted JPS5516497A (en) 1978-06-14 1979-06-12 Gate turnnoff semiconductor switching device

Country Status (4)

Country Link
JP (1) JPS5516497A (en)
DE (1) DE2923693A1 (en)
FR (1) FR2428918A1 (en)
NL (1) NL190389C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57150120U (en) * 1981-03-17 1982-09-21

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3109892A1 (en) * 1981-03-14 1982-09-23 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg REVERSE NON-LOCKING THYRISTOR WITH SHORT RELEASE TIME
DE3531631A1 (en) * 1985-09-05 1987-03-05 Licentia Gmbh ASYMMETRIC THYRISTOR AND METHOD FOR THE PRODUCTION THEREOF
DE3742638A1 (en) * 1987-12-16 1989-06-29 Semikron Elektronik Gmbh GTO thyristor
JPH02124295A (en) * 1988-10-28 1990-05-11 Ushio Kk Multishaft boring device
DE4218398A1 (en) * 1992-06-04 1993-12-09 Asea Brown Boveri High current pulse thyristor with two opposite semiconductor main faces - has GTO structure with highly doped emitter distributed over first face in form of narrow cathode fingers

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504242A (en) * 1967-08-11 1970-03-31 Westinghouse Electric Corp Switching power transistor with thyristor overload capacity
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches
NL165333C (en) * 1969-05-20 Bbc Brown Boveri & Cie STEERABLE SEMICONDUCTOR ELEMENT WITH FOUR LAYERED ZONES OF ALTERNATE GUIDE TYPE.
BE755356A (en) * 1969-08-27 1971-03-01 Westinghouse Electric Corp SEMI-CONDUCTIVE SWITCH WITH HIGH CURRENT CONTROL GRID
US3619738A (en) * 1969-10-13 1971-11-09 Tokyo Shibaura Electric Co Semiconductor device with improved connection to control electrode region
CH526859A (en) * 1970-11-02 1972-08-15 Bbc Brown Boveri & Cie Bistable semiconductor component
US3914781A (en) * 1971-04-13 1975-10-21 Sony Corp Gate controlled rectifier
DE2164644C3 (en) * 1971-12-24 1979-09-27 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Controllable semiconductor rectifier
IT1041931B (en) * 1974-09-06 1980-01-10 Rca Corp SEMICONDUCTIVE RECTIFIER SWITCHED TO THE NON-CONDUCTIVE STATE BY MEANS OF A VOLTAGE APPLIED TO ITS DOOR ELECTRODE
CH598696A5 (en) * 1976-10-08 1978-05-12 Bbc Brown Boveri & Cie
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57150120U (en) * 1981-03-17 1982-09-21

Also Published As

Publication number Publication date
DE2923693A1 (en) 1980-01-03
JPS6220713B2 (en) 1987-05-08
FR2428918A1 (en) 1980-01-11
DE2923693C2 (en) 1990-12-06
NL190389B (en) 1993-09-01
NL190389C (en) 1994-02-01
FR2428918B1 (en) 1984-06-29
NL7904589A (en) 1979-12-18

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