JPS5617064A - Transistor - Google Patents

Transistor

Info

Publication number
JPS5617064A
JPS5617064A JP9359279A JP9359279A JPS5617064A JP S5617064 A JPS5617064 A JP S5617064A JP 9359279 A JP9359279 A JP 9359279A JP 9359279 A JP9359279 A JP 9359279A JP S5617064 A JPS5617064 A JP S5617064A
Authority
JP
Japan
Prior art keywords
layer
region
type
collector
impurity density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9359279A
Other languages
Japanese (ja)
Inventor
Kunihiro Nakamura
Yoshio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9359279A priority Critical patent/JPS5617064A/en
Publication of JPS5617064A publication Critical patent/JPS5617064A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To enhance the injection efficiency of the transistor in reverse operation by forming a collector region of an upper low impurity density layer and a lower low impurity density layer and forming high impurity density regions for surrounding the base region at an interval in the upper layer when forming the base region in the upper layer. CONSTITUTION:A semiconductor substrate 3 becoming a collector region is formed of upper N<->-type epitaxial layer 2 and a lower N<+>-type layer 1, a P-type base region 4 is diffused in the upper epitaxial layer 2, an N-type emitter region 5 is formed therein to form the planar type transistor. In this configuration, an N<+>-type region 10 is diffused newly to the layer 2 at an interval while surrounding the region 4, and an insulating film 6 is coated on the entire surface. Thereafter, openings are perforated at the film 6, base, emitter and collector electrodes 8, 9, 11 are mounted therethrough, and the electrode 11 is connected and shorted to the collector electrode 7 formed on the back surface of the layer 1. In this manner, the surface injection efficiency can be improved to increase the current amplification factor thereof.
JP9359279A 1979-07-20 1979-07-20 Transistor Pending JPS5617064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9359279A JPS5617064A (en) 1979-07-20 1979-07-20 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9359279A JPS5617064A (en) 1979-07-20 1979-07-20 Transistor

Publications (1)

Publication Number Publication Date
JPS5617064A true JPS5617064A (en) 1981-02-18

Family

ID=14086563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9359279A Pending JPS5617064A (en) 1979-07-20 1979-07-20 Transistor

Country Status (1)

Country Link
JP (1) JPS5617064A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60259163A (en) * 1984-06-07 1985-12-21 Kanegi Shoten Kk Preparation of food using processing residue of frozen tuna

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60259163A (en) * 1984-06-07 1985-12-21 Kanegi Shoten Kk Preparation of food using processing residue of frozen tuna

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