FR2376513A1 - Dispositif semiconducteur muni d'un film protecteur - Google Patents

Dispositif semiconducteur muni d'un film protecteur

Info

Publication number
FR2376513A1
FR2376513A1 FR7639706A FR7639706A FR2376513A1 FR 2376513 A1 FR2376513 A1 FR 2376513A1 FR 7639706 A FR7639706 A FR 7639706A FR 7639706 A FR7639706 A FR 7639706A FR 2376513 A1 FR2376513 A1 FR 2376513A1
Authority
FR
France
Prior art keywords
protective film
semiconductor device
region
film
device equipped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7639706A
Other languages
English (en)
Other versions
FR2376513B1 (fr
Inventor
Jacques Lebailly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7639706A priority Critical patent/FR2376513A1/fr
Priority to DE19772756426 priority patent/DE2756426A1/de
Priority to CA293,365A priority patent/CA1098608A/fr
Priority to NL7714399A priority patent/NL7714399A/xx
Priority to US05/864,331 priority patent/US4207586A/en
Priority to GB53934/77A priority patent/GB1594246A/en
Priority to JP16098477A priority patent/JPS5391685A/ja
Publication of FR2376513A1 publication Critical patent/FR2376513A1/fr
Application granted granted Critical
Publication of FR2376513B1 publication Critical patent/FR2376513B1/fr
Priority to JP61175822A priority patent/JPS62122183A/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/025—Electric or magnetic properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Ceramic Engineering (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Dispositif semiconducteur muni d'un film protecteur réduisant et stabilisant la vitesse de recombinaison des porteurs minoritaires en surface Le dispositif est caractérisé par le fait qu'une région active 43 est recouverte par un film 42 constitué d'un matériau semiconducteur polycristallin, du même type de conductivité que la région 43 et de préférence de concentration d'impureté voisine, et en ce que le matériau du film 42 a une énergie de bande interdite qui dépasse d'au moins 80 milliélectronvolts celle de ia région 43. L'invention s'applique en général aux dispositifs semiconducteurs fonctionnant avec injection de porteurs minoritaires et, en particulier, aux dispositifs optoélectroniques
FR7639706A 1976-12-31 1976-12-31 Dispositif semiconducteur muni d'un film protecteur Granted FR2376513A1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR7639706A FR2376513A1 (fr) 1976-12-31 1976-12-31 Dispositif semiconducteur muni d'un film protecteur
DE19772756426 DE2756426A1 (de) 1976-12-31 1977-12-17 Halbleiteranordnung mit passivierungsschicht
CA293,365A CA1098608A (fr) 1976-12-31 1977-12-19 Traduction non-disponible
US05/864,331 US4207586A (en) 1976-12-31 1977-12-27 Semiconductor device having a passivating layer
NL7714399A NL7714399A (nl) 1976-12-31 1977-12-27 Halfgeleiderinrichting met passiveringslaag.
GB53934/77A GB1594246A (en) 1976-12-31 1977-12-28 Semiconductor device having a passivating layer
JP16098477A JPS5391685A (en) 1976-12-31 1977-12-29 Semiconductor
JP61175822A JPS62122183A (ja) 1976-12-31 1986-07-28 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7639706A FR2376513A1 (fr) 1976-12-31 1976-12-31 Dispositif semiconducteur muni d'un film protecteur

Publications (2)

Publication Number Publication Date
FR2376513A1 true FR2376513A1 (fr) 1978-07-28
FR2376513B1 FR2376513B1 (fr) 1981-10-30

Family

ID=9181792

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7639706A Granted FR2376513A1 (fr) 1976-12-31 1976-12-31 Dispositif semiconducteur muni d'un film protecteur

Country Status (7)

Country Link
US (1) US4207586A (fr)
JP (2) JPS5391685A (fr)
CA (1) CA1098608A (fr)
DE (1) DE2756426A1 (fr)
FR (1) FR2376513A1 (fr)
GB (1) GB1594246A (fr)
NL (1) NL7714399A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022857A1 (fr) * 1979-01-30 1981-01-28 Western Electric Company, Incorporated REDUCTION DU COURANT DE RECOMBINAISON EN SURFACE DANS DES DISPOSITIFS GaAs
EP0076495A2 (fr) * 1981-10-02 1983-04-13 Hitachi, Ltd. Photodiode
EP0038697B1 (fr) * 1980-04-22 1984-12-12 Semiconductor Research Foundation Capteur d'images à semiconducteurs

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291322A (en) * 1979-07-30 1981-09-22 Bell Telephone Laboratories, Incorporated Structure for shallow junction MOS circuits
JPS56165473A (en) * 1980-05-24 1981-12-19 Semiconductor Res Found Semiconductor pickup device
GB2133928B (en) * 1982-12-04 1986-07-30 Plessey Co Plc Coatings for semiconductor devices
US4860066A (en) * 1987-01-08 1989-08-22 International Business Machines Corporation Semiconductor electro-optical conversion
US5218216A (en) * 1987-01-31 1993-06-08 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
JPH07114237B2 (ja) * 1987-08-26 1995-12-06 株式会社東芝 半導体装置
US4935384A (en) * 1988-12-14 1990-06-19 The United States Of America As Represented By The United States Department Of Energy Method of passivating semiconductor surfaces
JPH02228080A (ja) * 1989-02-28 1990-09-11 Furukawa Electric Co Ltd:The 半導体受光素子
JPH0327577A (ja) * 1989-06-23 1991-02-05 イーストマン・コダックジャパン株式会社 発光ダイオ―ドアレイ
US5112409A (en) * 1991-01-23 1992-05-12 Solarex Corporation Solar cells with reduced recombination under grid lines, and method of manufacturing same
CA2070708C (fr) * 1991-08-08 1997-04-29 Ichiro Kasai Detecteur de lumieres visible et infrarouge a antimoniure d'indium comportant une surface receptrice sans clignotement
JP4221818B2 (ja) * 1999-05-28 2009-02-12 沖電気工業株式会社 光半導体素子の製造方法
DE10024473B4 (de) * 2000-05-18 2007-04-19 Vishay Semiconductor Gmbh Optischer Empfänger
US6777982B2 (en) * 2001-04-03 2004-08-17 Carnegie Mellon University Molecular scale latch and associated clocking scheme to provide gain, memory and I/O isolation
TWM307906U (en) * 2006-06-05 2007-03-11 Hon Hai Prec Ind Co Ltd Electrical connector
US20120312361A1 (en) * 2011-06-08 2012-12-13 International Business Machines Corporation Emitter structure and fabrication method for silicon heterojunction solar cell
US9153717B2 (en) * 2013-08-09 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Backside illuminated photo-sensitive device with gradated buffer layer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1184178B (de) * 1960-02-20 1964-12-23 Standard Elektrik Lorenz Ag Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit pn-UEbergaengen durch Vakuumbedampfen
GB1111991A (en) * 1965-02-25 1968-05-01 Nat Res Dev Method of passivation of pn junction devices
JPS502235B1 (fr) * 1970-09-07 1975-01-24
US3723201A (en) * 1971-11-01 1973-03-27 Motorola Inc Diffusion process for heteroepitaxial germanium device fabrication utilizing polycrystalline silicon mask
FR2270753B1 (fr) * 1974-05-09 1977-10-21 Radiotechnique Compelec
CA1023835A (fr) * 1974-07-08 1978-01-03 Tadao Nakamura Ecran lumineux de phosphure de gallium
FR2281650A1 (fr) * 1974-08-06 1976-03-05 Telecommunications Sa Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede
JPS5824951B2 (ja) * 1974-10-09 1983-05-24 ソニー株式会社 コウガクソウチ
JPS51121263A (en) * 1975-04-17 1976-10-23 Sony Corp Method of manufacturing a semiconductor divice
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
US4121238A (en) * 1977-02-16 1978-10-17 Bell Telephone Laboratories, Incorporated Metal oxide/indium phosphide devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022857A1 (fr) * 1979-01-30 1981-01-28 Western Electric Company, Incorporated REDUCTION DU COURANT DE RECOMBINAISON EN SURFACE DANS DES DISPOSITIFS GaAs
EP0022857A4 (fr) * 1979-01-30 1982-01-11 Western Electric Co REDUCTION DU COURANT DE RECOMBINAISON EN SURFACE DANS DES DISPOSITIFS GaAs.
EP0038697B1 (fr) * 1980-04-22 1984-12-12 Semiconductor Research Foundation Capteur d'images à semiconducteurs
EP0076495A2 (fr) * 1981-10-02 1983-04-13 Hitachi, Ltd. Photodiode
EP0076495A3 (en) * 1981-10-02 1984-12-05 Hitachi, Ltd. Photo-detective semiconductor device

Also Published As

Publication number Publication date
DE2756426A1 (de) 1978-07-13
NL7714399A (nl) 1978-07-04
JPS5391685A (en) 1978-08-11
US4207586A (en) 1980-06-10
JPS62122183A (ja) 1987-06-03
GB1594246A (en) 1981-07-30
FR2376513B1 (fr) 1981-10-30
JPS6327851B2 (fr) 1988-06-06
CA1098608A (fr) 1981-03-31

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