FR2376513A1 - Dispositif semiconducteur muni d'un film protecteur - Google Patents
Dispositif semiconducteur muni d'un film protecteurInfo
- Publication number
- FR2376513A1 FR2376513A1 FR7639706A FR7639706A FR2376513A1 FR 2376513 A1 FR2376513 A1 FR 2376513A1 FR 7639706 A FR7639706 A FR 7639706A FR 7639706 A FR7639706 A FR 7639706A FR 2376513 A1 FR2376513 A1 FR 2376513A1
- Authority
- FR
- France
- Prior art keywords
- protective film
- semiconductor device
- region
- film
- device equipped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000001681 protective effect Effects 0.000 title abstract 2
- 239000000969 carrier Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
- B32B7/025—Electric or magnetic properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Ceramic Engineering (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Lasers (AREA)
Abstract
Dispositif semiconducteur muni d'un film protecteur réduisant et stabilisant la vitesse de recombinaison des porteurs minoritaires en surface Le dispositif est caractérisé par le fait qu'une région active 43 est recouverte par un film 42 constitué d'un matériau semiconducteur polycristallin, du même type de conductivité que la région 43 et de préférence de concentration d'impureté voisine, et en ce que le matériau du film 42 a une énergie de bande interdite qui dépasse d'au moins 80 milliélectronvolts celle de ia région 43. L'invention s'applique en général aux dispositifs semiconducteurs fonctionnant avec injection de porteurs minoritaires et, en particulier, aux dispositifs optoélectroniques
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7639706A FR2376513A1 (fr) | 1976-12-31 | 1976-12-31 | Dispositif semiconducteur muni d'un film protecteur |
DE19772756426 DE2756426A1 (de) | 1976-12-31 | 1977-12-17 | Halbleiteranordnung mit passivierungsschicht |
CA293,365A CA1098608A (fr) | 1976-12-31 | 1977-12-19 | Traduction non-disponible |
US05/864,331 US4207586A (en) | 1976-12-31 | 1977-12-27 | Semiconductor device having a passivating layer |
NL7714399A NL7714399A (nl) | 1976-12-31 | 1977-12-27 | Halfgeleiderinrichting met passiveringslaag. |
GB53934/77A GB1594246A (en) | 1976-12-31 | 1977-12-28 | Semiconductor device having a passivating layer |
JP16098477A JPS5391685A (en) | 1976-12-31 | 1977-12-29 | Semiconductor |
JP61175822A JPS62122183A (ja) | 1976-12-31 | 1986-07-28 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7639706A FR2376513A1 (fr) | 1976-12-31 | 1976-12-31 | Dispositif semiconducteur muni d'un film protecteur |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2376513A1 true FR2376513A1 (fr) | 1978-07-28 |
FR2376513B1 FR2376513B1 (fr) | 1981-10-30 |
Family
ID=9181792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7639706A Granted FR2376513A1 (fr) | 1976-12-31 | 1976-12-31 | Dispositif semiconducteur muni d'un film protecteur |
Country Status (7)
Country | Link |
---|---|
US (1) | US4207586A (fr) |
JP (2) | JPS5391685A (fr) |
CA (1) | CA1098608A (fr) |
DE (1) | DE2756426A1 (fr) |
FR (1) | FR2376513A1 (fr) |
GB (1) | GB1594246A (fr) |
NL (1) | NL7714399A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0022857A1 (fr) * | 1979-01-30 | 1981-01-28 | Western Electric Company, Incorporated | REDUCTION DU COURANT DE RECOMBINAISON EN SURFACE DANS DES DISPOSITIFS GaAs |
EP0076495A2 (fr) * | 1981-10-02 | 1983-04-13 | Hitachi, Ltd. | Photodiode |
EP0038697B1 (fr) * | 1980-04-22 | 1984-12-12 | Semiconductor Research Foundation | Capteur d'images à semiconducteurs |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4291322A (en) * | 1979-07-30 | 1981-09-22 | Bell Telephone Laboratories, Incorporated | Structure for shallow junction MOS circuits |
JPS56165473A (en) * | 1980-05-24 | 1981-12-19 | Semiconductor Res Found | Semiconductor pickup device |
GB2133928B (en) * | 1982-12-04 | 1986-07-30 | Plessey Co Plc | Coatings for semiconductor devices |
US4860066A (en) * | 1987-01-08 | 1989-08-22 | International Business Machines Corporation | Semiconductor electro-optical conversion |
US5218216A (en) * | 1987-01-31 | 1993-06-08 | Toyoda Gosei Co., Ltd. | Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same |
JPH07114237B2 (ja) * | 1987-08-26 | 1995-12-06 | 株式会社東芝 | 半導体装置 |
US4935384A (en) * | 1988-12-14 | 1990-06-19 | The United States Of America As Represented By The United States Department Of Energy | Method of passivating semiconductor surfaces |
JPH02228080A (ja) * | 1989-02-28 | 1990-09-11 | Furukawa Electric Co Ltd:The | 半導体受光素子 |
JPH0327577A (ja) * | 1989-06-23 | 1991-02-05 | イーストマン・コダックジャパン株式会社 | 発光ダイオ―ドアレイ |
US5112409A (en) * | 1991-01-23 | 1992-05-12 | Solarex Corporation | Solar cells with reduced recombination under grid lines, and method of manufacturing same |
CA2070708C (fr) * | 1991-08-08 | 1997-04-29 | Ichiro Kasai | Detecteur de lumieres visible et infrarouge a antimoniure d'indium comportant une surface receptrice sans clignotement |
JP4221818B2 (ja) * | 1999-05-28 | 2009-02-12 | 沖電気工業株式会社 | 光半導体素子の製造方法 |
DE10024473B4 (de) * | 2000-05-18 | 2007-04-19 | Vishay Semiconductor Gmbh | Optischer Empfänger |
US6777982B2 (en) * | 2001-04-03 | 2004-08-17 | Carnegie Mellon University | Molecular scale latch and associated clocking scheme to provide gain, memory and I/O isolation |
TWM307906U (en) * | 2006-06-05 | 2007-03-11 | Hon Hai Prec Ind Co Ltd | Electrical connector |
US20120312361A1 (en) * | 2011-06-08 | 2012-12-13 | International Business Machines Corporation | Emitter structure and fabrication method for silicon heterojunction solar cell |
US9153717B2 (en) * | 2013-08-09 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside illuminated photo-sensitive device with gradated buffer layer |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1184178B (de) * | 1960-02-20 | 1964-12-23 | Standard Elektrik Lorenz Ag | Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit pn-UEbergaengen durch Vakuumbedampfen |
GB1111991A (en) * | 1965-02-25 | 1968-05-01 | Nat Res Dev | Method of passivation of pn junction devices |
JPS502235B1 (fr) * | 1970-09-07 | 1975-01-24 | ||
US3723201A (en) * | 1971-11-01 | 1973-03-27 | Motorola Inc | Diffusion process for heteroepitaxial germanium device fabrication utilizing polycrystalline silicon mask |
FR2270753B1 (fr) * | 1974-05-09 | 1977-10-21 | Radiotechnique Compelec | |
CA1023835A (fr) * | 1974-07-08 | 1978-01-03 | Tadao Nakamura | Ecran lumineux de phosphure de gallium |
FR2281650A1 (fr) * | 1974-08-06 | 1976-03-05 | Telecommunications Sa | Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede |
JPS5824951B2 (ja) * | 1974-10-09 | 1983-05-24 | ソニー株式会社 | コウガクソウチ |
JPS51121263A (en) * | 1975-04-17 | 1976-10-23 | Sony Corp | Method of manufacturing a semiconductor divice |
JPS51128268A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
US4121238A (en) * | 1977-02-16 | 1978-10-17 | Bell Telephone Laboratories, Incorporated | Metal oxide/indium phosphide devices |
-
1976
- 1976-12-31 FR FR7639706A patent/FR2376513A1/fr active Granted
-
1977
- 1977-12-17 DE DE19772756426 patent/DE2756426A1/de not_active Ceased
- 1977-12-19 CA CA293,365A patent/CA1098608A/fr not_active Expired
- 1977-12-27 NL NL7714399A patent/NL7714399A/xx not_active Application Discontinuation
- 1977-12-27 US US05/864,331 patent/US4207586A/en not_active Expired - Lifetime
- 1977-12-28 GB GB53934/77A patent/GB1594246A/en not_active Expired
- 1977-12-29 JP JP16098477A patent/JPS5391685A/ja active Granted
-
1986
- 1986-07-28 JP JP61175822A patent/JPS62122183A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0022857A1 (fr) * | 1979-01-30 | 1981-01-28 | Western Electric Company, Incorporated | REDUCTION DU COURANT DE RECOMBINAISON EN SURFACE DANS DES DISPOSITIFS GaAs |
EP0022857A4 (fr) * | 1979-01-30 | 1982-01-11 | Western Electric Co | REDUCTION DU COURANT DE RECOMBINAISON EN SURFACE DANS DES DISPOSITIFS GaAs. |
EP0038697B1 (fr) * | 1980-04-22 | 1984-12-12 | Semiconductor Research Foundation | Capteur d'images à semiconducteurs |
EP0076495A2 (fr) * | 1981-10-02 | 1983-04-13 | Hitachi, Ltd. | Photodiode |
EP0076495A3 (en) * | 1981-10-02 | 1984-12-05 | Hitachi, Ltd. | Photo-detective semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
DE2756426A1 (de) | 1978-07-13 |
NL7714399A (nl) | 1978-07-04 |
JPS5391685A (en) | 1978-08-11 |
US4207586A (en) | 1980-06-10 |
JPS62122183A (ja) | 1987-06-03 |
GB1594246A (en) | 1981-07-30 |
FR2376513B1 (fr) | 1981-10-30 |
JPS6327851B2 (fr) | 1988-06-06 |
CA1098608A (fr) | 1981-03-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |