GB1111991A - Method of passivation of pn junction devices - Google Patents

Method of passivation of pn junction devices

Info

Publication number
GB1111991A
GB1111991A GB823665A GB823665A GB1111991A GB 1111991 A GB1111991 A GB 1111991A GB 823665 A GB823665 A GB 823665A GB 823665 A GB823665 A GB 823665A GB 1111991 A GB1111991 A GB 1111991A
Authority
GB
United Kingdom
Prior art keywords
layer
alloying
feb
semi
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB823665A
Inventor
Michael John Coupland
Ronald Francis Johnston Broom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Priority to GB823665A priority Critical patent/GB1111991A/en
Publication of GB1111991A publication Critical patent/GB1111991A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)

Abstract

1,111,991. Semi-conductor devices. NATIONAL RESEARCH DEVELOPMENT CORPORATION. 24 Feb., 1966 [25 Feb., 1965], No. 8236/65. Heading H1K, A PN junction in an A m B v compound semiconductor body is protected by an epitaxial layer of semi-insulating material produced by diffusion into the body or vapour deposition on it. In a typical case the material is deposited on a transistor zone structure formed by oxide masking technique after removal of the oxide, contacts being made to the zones by alloying through the material. Alternatively a layer of intrinsic gallium arsenide is epitaxially deposited on a doped body of the same material and a buried PN junction formed by alloying through the intrinsic layer. The use of gallium phosphide to protect PN junctions in gallium phosphide is also suggested.
GB823665A 1965-02-25 1965-02-25 Method of passivation of pn junction devices Expired GB1111991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB823665A GB1111991A (en) 1965-02-25 1965-02-25 Method of passivation of pn junction devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB823665A GB1111991A (en) 1965-02-25 1965-02-25 Method of passivation of pn junction devices

Publications (1)

Publication Number Publication Date
GB1111991A true GB1111991A (en) 1968-05-01

Family

ID=9848589

Family Applications (1)

Application Number Title Priority Date Filing Date
GB823665A Expired GB1111991A (en) 1965-02-25 1965-02-25 Method of passivation of pn junction devices

Country Status (1)

Country Link
GB (1) GB1111991A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207586A (en) * 1976-12-31 1980-06-10 U.S. Philips Corporation Semiconductor device having a passivating layer
GB2133928A (en) * 1982-12-04 1984-08-01 Plessey Co Plc Coatings for semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207586A (en) * 1976-12-31 1980-06-10 U.S. Philips Corporation Semiconductor device having a passivating layer
GB2133928A (en) * 1982-12-04 1984-08-01 Plessey Co Plc Coatings for semiconductor devices

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