FR2375724A1 - Perfectionnement a un dispositif semi-conducteur - Google Patents

Perfectionnement a un dispositif semi-conducteur

Info

Publication number
FR2375724A1
FR2375724A1 FR7739067A FR7739067A FR2375724A1 FR 2375724 A1 FR2375724 A1 FR 2375724A1 FR 7739067 A FR7739067 A FR 7739067A FR 7739067 A FR7739067 A FR 7739067A FR 2375724 A1 FR2375724 A1 FR 2375724A1
Authority
FR
France
Prior art keywords
semiconductor device
comb
development
trunk
fingers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7739067A
Other languages
English (en)
Other versions
FR2375724B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2375724A1 publication Critical patent/FR2375724A1/fr
Application granted granted Critical
Publication of FR2375724B1 publication Critical patent/FR2375724B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thermistors And Varistors (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

L'invention concerne un dispositif semi-conducteur comprenant un corps semi-conducteur ayant une surface, deux régions de types opposés de conductivité dans le corps, près de la surface, et une couche en matériau conducteur sur la surface du corps en contact avec l'une des régions. Selon l'invention, la couche 22 a une configuration comprenant : une première partie 24 en peigne ayant un premier des 26 avec des extrémités et une premiere quantité de doigts 28 s'étendant du premier des 24; cette configuration comprend également un tronc 30 ayant un segment 32 parallèle au des 26 de la première partie en peigne 24, le tronc 30 contactant le premier des de la premiere partie en forme de peigne en un point entre ses extrémités. L'invention s'applique notamment aux transistors ayant des structures base-émetteur imbriquées à la façon de doigts.
FR7739067A 1976-12-27 1977-12-23 Perfectionnement a un dispositif semi-conducteur Granted FR2375724A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/754,683 US4091409A (en) 1976-12-27 1976-12-27 Semiconductor device having symmetrical current distribution

Publications (2)

Publication Number Publication Date
FR2375724A1 true FR2375724A1 (fr) 1978-07-21
FR2375724B1 FR2375724B1 (fr) 1982-11-19

Family

ID=25035860

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7739067A Granted FR2375724A1 (fr) 1976-12-27 1977-12-23 Perfectionnement a un dispositif semi-conducteur

Country Status (11)

Country Link
US (1) US4091409A (fr)
JP (1) JPS5383580A (fr)
BE (1) BE862301A (fr)
DE (1) DE2756514A1 (fr)
FR (1) FR2375724A1 (fr)
GB (1) GB1540559A (fr)
IN (1) IN147965B (fr)
IT (1) IT1087917B (fr)
PL (1) PL113788B1 (fr)
SE (1) SE437588B (fr)
YU (1) YU39405B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2702571C3 (de) * 1977-01-22 1982-02-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Kontaktstruktur für ein Vielfach- Halbleiterbauelement
US4194174A (en) * 1978-06-19 1980-03-18 Microwave Semiconductor Corp. Method for fabricating ballasted finger electrode
US4717946A (en) * 1983-04-20 1988-01-05 Applied Solar Energy Corporation Thin line junction photodiode
US5204735A (en) * 1988-04-21 1993-04-20 Kabushiki Kaisha Toshiba High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same
US5804867A (en) * 1996-10-02 1998-09-08 Ericsson Inc. Thermally balanced radio frequency power transistor
PL232498B1 (pl) 2016-06-10 2019-06-28 Wido Profil Spolka Z Ograniczona Odpowiedzialnoscia Bezkotwowy zespół do mocowania płytowych elementów okładzinowych i sposób jego mocowania

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
US3430115A (en) * 1966-08-31 1969-02-25 Webb James E Apparatus for ballasting high frequency transistors
US3609460A (en) * 1968-06-28 1971-09-28 Rca Corp Power transistor having ballasted emitter fingers interdigitated with base fingers
US3619738A (en) * 1969-10-13 1971-11-09 Tokyo Shibaura Electric Co Semiconductor device with improved connection to control electrode region
US3756924A (en) * 1971-04-01 1973-09-04 Texas Instruments Inc Method of fabricating a semiconductor device
JPS5110699U (fr) * 1974-07-10 1976-01-26

Also Published As

Publication number Publication date
US4091409A (en) 1978-05-23
DE2756514C2 (fr) 1989-04-06
BE862301A (fr) 1978-04-14
SE437588B (sv) 1985-03-04
SE7713580L (sv) 1978-06-28
IT1087917B (it) 1985-06-04
DE2756514A1 (de) 1978-06-29
IN147965B (fr) 1980-08-23
FR2375724B1 (fr) 1982-11-19
YU39405B (en) 1984-12-31
YU286377A (en) 1982-02-28
PL203303A1 (pl) 1978-07-17
PL113788B1 (en) 1980-12-31
JPS5383580A (en) 1978-07-24
GB1540559A (en) 1979-02-14

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Legal Events

Date Code Title Description
ST Notification of lapse