FR2375724A1 - Perfectionnement a un dispositif semi-conducteur - Google Patents
Perfectionnement a un dispositif semi-conducteurInfo
- Publication number
- FR2375724A1 FR2375724A1 FR7739067A FR7739067A FR2375724A1 FR 2375724 A1 FR2375724 A1 FR 2375724A1 FR 7739067 A FR7739067 A FR 7739067A FR 7739067 A FR7739067 A FR 7739067A FR 2375724 A1 FR2375724 A1 FR 2375724A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- comb
- development
- trunk
- fingers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000004020 conductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Thermistors And Varistors (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Abstract
L'invention concerne un dispositif semi-conducteur comprenant un corps semi-conducteur ayant une surface, deux régions de types opposés de conductivité dans le corps, près de la surface, et une couche en matériau conducteur sur la surface du corps en contact avec l'une des régions. Selon l'invention, la couche 22 a une configuration comprenant : une première partie 24 en peigne ayant un premier des 26 avec des extrémités et une premiere quantité de doigts 28 s'étendant du premier des 24; cette configuration comprend également un tronc 30 ayant un segment 32 parallèle au des 26 de la première partie en peigne 24, le tronc 30 contactant le premier des de la premiere partie en forme de peigne en un point entre ses extrémités. L'invention s'applique notamment aux transistors ayant des structures base-émetteur imbriquées à la façon de doigts.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/754,683 US4091409A (en) | 1976-12-27 | 1976-12-27 | Semiconductor device having symmetrical current distribution |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2375724A1 true FR2375724A1 (fr) | 1978-07-21 |
FR2375724B1 FR2375724B1 (fr) | 1982-11-19 |
Family
ID=25035860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7739067A Granted FR2375724A1 (fr) | 1976-12-27 | 1977-12-23 | Perfectionnement a un dispositif semi-conducteur |
Country Status (11)
Country | Link |
---|---|
US (1) | US4091409A (fr) |
JP (1) | JPS5383580A (fr) |
BE (1) | BE862301A (fr) |
DE (1) | DE2756514A1 (fr) |
FR (1) | FR2375724A1 (fr) |
GB (1) | GB1540559A (fr) |
IN (1) | IN147965B (fr) |
IT (1) | IT1087917B (fr) |
PL (1) | PL113788B1 (fr) |
SE (1) | SE437588B (fr) |
YU (1) | YU39405B (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2702571C3 (de) * | 1977-01-22 | 1982-02-04 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Kontaktstruktur für ein Vielfach- Halbleiterbauelement |
US4194174A (en) * | 1978-06-19 | 1980-03-18 | Microwave Semiconductor Corp. | Method for fabricating ballasted finger electrode |
US4717946A (en) * | 1983-04-20 | 1988-01-05 | Applied Solar Energy Corporation | Thin line junction photodiode |
US5204735A (en) * | 1988-04-21 | 1993-04-20 | Kabushiki Kaisha Toshiba | High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same |
US5804867A (en) * | 1996-10-02 | 1998-09-08 | Ericsson Inc. | Thermally balanced radio frequency power transistor |
PL232498B1 (pl) | 2016-06-10 | 2019-06-28 | Wido Profil Spolka Z Ograniczona Odpowiedzialnoscia | Bezkotwowy zespół do mocowania płytowych elementów okładzinowych i sposób jego mocowania |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3225261A (en) * | 1963-11-19 | 1965-12-21 | Fairchild Camera Instr Co | High frequency power transistor |
US3430115A (en) * | 1966-08-31 | 1969-02-25 | Webb James E | Apparatus for ballasting high frequency transistors |
US3609460A (en) * | 1968-06-28 | 1971-09-28 | Rca Corp | Power transistor having ballasted emitter fingers interdigitated with base fingers |
US3619738A (en) * | 1969-10-13 | 1971-11-09 | Tokyo Shibaura Electric Co | Semiconductor device with improved connection to control electrode region |
US3756924A (en) * | 1971-04-01 | 1973-09-04 | Texas Instruments Inc | Method of fabricating a semiconductor device |
JPS5110699U (fr) * | 1974-07-10 | 1976-01-26 |
-
1976
- 1976-12-27 US US05/754,683 patent/US4091409A/en not_active Expired - Lifetime
-
1977
- 1977-11-07 IN IN1589/CAL/77A patent/IN147965B/en unknown
- 1977-11-29 IT IT30191/77A patent/IT1087917B/it active
- 1977-11-30 SE SE7713580A patent/SE437588B/sv not_active IP Right Cessation
- 1977-12-05 YU YU2863/77A patent/YU39405B/xx unknown
- 1977-12-19 DE DE19772756514 patent/DE2756514A1/de active Granted
- 1977-12-22 GB GB53470/77A patent/GB1540559A/en not_active Expired
- 1977-12-22 JP JP15547577A patent/JPS5383580A/ja active Pending
- 1977-12-23 PL PL1977203303A patent/PL113788B1/pl unknown
- 1977-12-23 BE BE183829A patent/BE862301A/fr unknown
- 1977-12-23 FR FR7739067A patent/FR2375724A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
US4091409A (en) | 1978-05-23 |
DE2756514C2 (fr) | 1989-04-06 |
BE862301A (fr) | 1978-04-14 |
SE437588B (sv) | 1985-03-04 |
SE7713580L (sv) | 1978-06-28 |
IT1087917B (it) | 1985-06-04 |
DE2756514A1 (de) | 1978-06-29 |
IN147965B (fr) | 1980-08-23 |
FR2375724B1 (fr) | 1982-11-19 |
YU39405B (en) | 1984-12-31 |
YU286377A (en) | 1982-02-28 |
PL203303A1 (pl) | 1978-07-17 |
PL113788B1 (en) | 1980-12-31 |
JPS5383580A (en) | 1978-07-24 |
GB1540559A (en) | 1979-02-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |