FR2373879A1 - Mesa type diode semiconductor structure - has reduced mesa part and has highly doped residual substrate of small thickness - Google Patents

Mesa type diode semiconductor structure - has reduced mesa part and has highly doped residual substrate of small thickness

Info

Publication number
FR2373879A1
FR2373879A1 FR7636786A FR7636786A FR2373879A1 FR 2373879 A1 FR2373879 A1 FR 2373879A1 FR 7636786 A FR7636786 A FR 7636786A FR 7636786 A FR7636786 A FR 7636786A FR 2373879 A1 FR2373879 A1 FR 2373879A1
Authority
FR
France
Prior art keywords
mesa
diode
semiconductor structure
substrate
highly doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7636786A
Other languages
French (fr)
Other versions
FR2373879B1 (en
Inventor
Raymond Henry
Jean-Victor Bouvet
Alain Chapard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7636786A priority Critical patent/FR2373879A1/en
Publication of FR2373879A1 publication Critical patent/FR2373879A1/en
Application granted granted Critical
Publication of FR2373879B1 publication Critical patent/FR2373879B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

The semiconductor structure includes a diode of the mesa type and a block of dielectric material. The dielectric material has larger dimensions than that of the mesa part of the diode. The dielectric material block (10) has two large plane and parallel faces each carrying metallised areas (3, 4). The diode (10) which is reduced at its mesa part has a highly doped residual substrate. The thickness of this substrate is small with respect to the thickness of the mesa part. The diode is buried in the dielectric block so that its residual substrate is in contact with one of the metal areas on the largest face. A metal contact (5) of good heat and electrical conducting properties ensures the connection through the block between the opposite face of the substrate and the metal area of the blocks other largest face.
FR7636786A 1976-12-07 1976-12-07 Mesa type diode semiconductor structure - has reduced mesa part and has highly doped residual substrate of small thickness Granted FR2373879A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7636786A FR2373879A1 (en) 1976-12-07 1976-12-07 Mesa type diode semiconductor structure - has reduced mesa part and has highly doped residual substrate of small thickness

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7636786A FR2373879A1 (en) 1976-12-07 1976-12-07 Mesa type diode semiconductor structure - has reduced mesa part and has highly doped residual substrate of small thickness

Publications (2)

Publication Number Publication Date
FR2373879A1 true FR2373879A1 (en) 1978-07-07
FR2373879B1 FR2373879B1 (en) 1980-02-08

Family

ID=9180741

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7636786A Granted FR2373879A1 (en) 1976-12-07 1976-12-07 Mesa type diode semiconductor structure - has reduced mesa part and has highly doped residual substrate of small thickness

Country Status (1)

Country Link
FR (1) FR2373879A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0029334A1 (en) * 1979-11-15 1981-05-27 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Series-connected combination of two-terminal semiconductor devices and their fabrication
US4340900A (en) * 1979-06-19 1982-07-20 The United States Of America As Represented By The Secretary Of The Air Force Mesa epitaxial diode with oxide passivated junction and plated heat sink
EP0417851A2 (en) * 1989-09-15 1991-03-20 Philips Electronics Uk Limited Two-terminal non-linear devices and their method of fabrication
US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure
US5179035A (en) * 1989-09-15 1993-01-12 U.S. Philips Corporation Method of fabricating two-terminal non-linear devices
WO2002001629A1 (en) * 2000-06-28 2002-01-03 Marconi Applied Technologies Limited Semiconductor device and method of manufacturing

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340900A (en) * 1979-06-19 1982-07-20 The United States Of America As Represented By The Secretary Of The Air Force Mesa epitaxial diode with oxide passivated junction and plated heat sink
EP0029334A1 (en) * 1979-11-15 1981-05-27 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Series-connected combination of two-terminal semiconductor devices and their fabrication
US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure
EP0417851A2 (en) * 1989-09-15 1991-03-20 Philips Electronics Uk Limited Two-terminal non-linear devices and their method of fabrication
EP0417851A3 (en) * 1989-09-15 1991-09-25 Philips Electronic And Associated Industries Limited Two-terminal non-linear devices and their method of fabrication
US5179035A (en) * 1989-09-15 1993-01-12 U.S. Philips Corporation Method of fabricating two-terminal non-linear devices
WO2002001629A1 (en) * 2000-06-28 2002-01-03 Marconi Applied Technologies Limited Semiconductor device and method of manufacturing

Also Published As

Publication number Publication date
FR2373879B1 (en) 1980-02-08

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Legal Events

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