FR2371524A1 - Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma - Google Patents

Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma

Info

Publication number
FR2371524A1
FR2371524A1 FR7634688A FR7634688A FR2371524A1 FR 2371524 A1 FR2371524 A1 FR 2371524A1 FR 7634688 A FR7634688 A FR 7634688A FR 7634688 A FR7634688 A FR 7634688A FR 2371524 A1 FR2371524 A1 FR 2371524A1
Authority
FR
France
Prior art keywords
plasma
depositing
gas
decomposition
thin layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7634688A
Other languages
English (en)
Other versions
FR2371524B1 (fr
Inventor
Bernard Bourdon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alsthom Atlantique SA
Original Assignee
Alsthom Atlantique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alsthom Atlantique SA filed Critical Alsthom Atlantique SA
Priority to FR7634688A priority Critical patent/FR2371524A1/fr
Priority to GB44118/77A priority patent/GB1534833A/en
Priority to BE1008474A priority patent/BE860160A/fr
Priority to US05/846,073 priority patent/US4173661A/en
Priority to DE2750597A priority patent/DE2750597C2/de
Publication of FR2371524A1 publication Critical patent/FR2371524A1/fr
Application granted granted Critical
Publication of FR2371524B1 publication Critical patent/FR2371524B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

L'invention concerne un procédé de dépôt d'une couche mince par décomposition d'un gaz dans un plasma. Pour éviter une saturation de la vitesse de dépôt de silicium dopé, on polarise le substrat par rapport au plasma. Application à la réalisation de composants semi-conducteurs.
FR7634688A 1976-11-18 1976-11-18 Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma Granted FR2371524A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7634688A FR2371524A1 (fr) 1976-11-18 1976-11-18 Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma
GB44118/77A GB1534833A (en) 1976-11-18 1977-10-24 Method for depositing thin layers of materials by decomposing a gas to yield a plasma
BE1008474A BE860160A (fr) 1976-11-18 1977-10-27 Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma
US05/846,073 US4173661A (en) 1976-11-18 1977-10-27 Method for depositing thin layers of materials by decomposing a gas to yield a plasma
DE2750597A DE2750597C2 (de) 1976-11-18 1977-11-11 Verfahren zum Aufbringen einer dünnen Schicht auf ein Substrat durch Zersetzen eines Gases in einem Plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7634688A FR2371524A1 (fr) 1976-11-18 1976-11-18 Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma

Publications (2)

Publication Number Publication Date
FR2371524A1 true FR2371524A1 (fr) 1978-06-16
FR2371524B1 FR2371524B1 (fr) 1979-08-31

Family

ID=9180036

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7634688A Granted FR2371524A1 (fr) 1976-11-18 1976-11-18 Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma

Country Status (5)

Country Link
US (1) US4173661A (fr)
BE (1) BE860160A (fr)
DE (1) DE2750597C2 (fr)
FR (1) FR2371524A1 (fr)
GB (1) GB1534833A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008406A1 (fr) * 1978-08-23 1980-03-05 Siemens Aktiengesellschaft Procédé de réalisation d'une couche de passivation sur un corps semiconducteur en silicium
DE2951453A1 (de) * 1978-12-28 1980-07-17 Canon Kk Verfahren zur erzeugung eines films unter anwendung von glimmentladung
EP0036780A2 (fr) * 1980-03-24 1981-09-30 Hitachi, Ltd. Procédé de fabrication de transducteurs photoélectriques
EP0174553A2 (fr) * 1984-09-13 1986-03-19 Kabushiki Kaisha Nagano Keiki Seisakusho Méthode pour la production de dispositifs piézorésistifs en couche mince de silicium
FR2646557A1 (fr) * 1989-04-28 1990-11-02 Canon Kk Procede pour former un film de semiconducteur polycristallin sur un substrat isolant

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565731A (en) * 1978-05-04 1986-01-21 Canon Kabushiki Kaisha Image-forming member for electrophotography
JPS5930130B2 (ja) * 1979-09-20 1984-07-25 富士通株式会社 気相成長方法
DE3026164A1 (de) * 1980-07-08 1982-01-28 Europäische Atomgemeinschaft (EURATOM), Kirchberg Verfahren und vorrichtung zur entladungschemischen behandlung empfindlicher werkstuecke durch einsatz der glimmentladung
EP0049032B1 (fr) * 1980-08-21 1986-09-17 National Research Development Corporation Revêtement de matériaux isolants à l'aide d'une décharge luminescente
US4421786A (en) * 1981-01-23 1983-12-20 Western Electric Co. Chemical vapor deposition reactor for silicon epitaxial processes
US4512283A (en) * 1982-02-01 1985-04-23 Texas Instruments Incorporated Plasma reactor sidewall shield
US4501766A (en) * 1982-02-03 1985-02-26 Tokyo Shibaura Denki Kabushiki Kaisha Film depositing apparatus and a film depositing method
GB2132637A (en) * 1983-01-03 1984-07-11 Lfe Corp Process for depositing dielectric films in a plasma glow discharge
JPS59207620A (ja) * 1983-05-10 1984-11-24 Zenko Hirose アモルフアスシリコン成膜装置
US4618381A (en) * 1983-05-26 1986-10-21 Fuji Electric Corporate Research And Development Ltd. Method for adding impurities to semiconductor base material
US4891087A (en) * 1984-10-22 1990-01-02 Texas Instruments Incorporated Isolation substrate ring for plasma reactor
GB2193976B (en) * 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate
GB2191510A (en) * 1986-04-16 1987-12-16 Gen Electric Plc Depositing doped polysilicon films
US5028566A (en) * 1987-04-10 1991-07-02 Air Products And Chemicals, Inc. Method of forming silicon dioxide glass films
US6699530B2 (en) 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
US6251758B1 (en) 1994-11-14 2001-06-26 Applied Materials, Inc. Construction of a film on a semiconductor wafer
US6365495B2 (en) 1994-11-14 2002-04-02 Applied Materials, Inc. Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature
US6155198A (en) * 1994-11-14 2000-12-05 Applied Materials, Inc. Apparatus for constructing an oxidized film on a semiconductor wafer
US6291343B1 (en) 1994-11-14 2001-09-18 Applied Materials, Inc. Plasma annealing of substrates to improve adhesion
WO1998000576A1 (fr) 1996-06-28 1998-01-08 Lam Research Corporation Appareil et procede pour le depot en phase vapeur par procede chimique au plasma haute densite
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US6184158B1 (en) 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
FR2772473B1 (fr) * 1997-12-11 2000-04-28 Yvon Sampeur Procede pour realiser une jauge de contrainte et jauge de contrainte obtenue par la mise en oeuvre du procede
US6511760B1 (en) * 1998-02-27 2003-01-28 Restek Corporation Method of passivating a gas vessel or component of a gas transfer system using a silicon overlay coating
US20030192645A1 (en) * 2002-04-16 2003-10-16 Applied Materials, Inc. Method and apparatus for creating circumferential process gas flow in a semiconductor wafer plasma reactor chamber
US7070833B2 (en) * 2003-03-05 2006-07-04 Restek Corporation Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments
US20040175578A1 (en) * 2003-03-05 2004-09-09 Smith David A. Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments
KR101911196B1 (ko) 2009-10-27 2018-10-24 실코텍 코포레이션 화학적 증기 증착 코팅, 물품, 및 방법
KR101790206B1 (ko) 2010-10-05 2017-10-25 실코텍 코포레이션 내마모성 코팅, 물건 및 방법
US9975143B2 (en) 2013-05-14 2018-05-22 Silcotek Corp. Chemical vapor deposition functionalization
WO2016017047A1 (fr) * 2014-07-28 2016-02-04 キヤノンアネルバ株式会社 Procédé de formation de film, dispositif de traitement sous vide, procédé de fabrication d'élément électroluminescent à semi-conducteur, élément électroluminescent à semi-conducteur, procédé de fabrication d'élément électronique à semi-conducteur, élément électronique à semi-conducteur, et dispositif d'éclairage
US9915001B2 (en) 2014-09-03 2018-03-13 Silcotek Corp. Chemical vapor deposition process and coated article
US10316408B2 (en) 2014-12-12 2019-06-11 Silcotek Corp. Delivery device, manufacturing system and process of manufacturing
WO2017040623A1 (fr) 2015-09-01 2017-03-09 Silcotek Corp. Revêtement par dépôt chimique en phase vapeur thermique
US10323321B1 (en) 2016-01-08 2019-06-18 Silcotek Corp. Thermal chemical vapor deposition process and coated article
US10487403B2 (en) 2016-12-13 2019-11-26 Silcotek Corp Fluoro-containing thermal chemical vapor deposition process and article
WO2020252306A1 (fr) 2019-06-14 2020-12-17 Silcotek Corp. Croissance de nanofils

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AT258664B (de) * 1964-08-25 1967-12-11 Fritz Dr Grasenick Vorrichtung zur Herstellung und bzw. oder zum Abbau von Schichten mittels elektrischer Gasentladungen
US3525680A (en) * 1965-12-20 1970-08-25 Ibm Method and apparatus for the radio frequency sputtering of dielectric materials
FR1582129A (fr) * 1968-06-18 1969-09-26
DD96984A1 (fr) * 1972-06-12 1973-04-12
JPS5333053B2 (fr) * 1973-08-15 1978-09-12
US4025339A (en) * 1974-01-18 1977-05-24 Coulter Information Systems, Inc. Electrophotographic film, method of making the same and photoconductive coating used therewith
US4013532A (en) * 1975-03-03 1977-03-22 Airco, Inc. Method for coating a substrate

Non-Patent Citations (1)

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NEANT *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008406A1 (fr) * 1978-08-23 1980-03-05 Siemens Aktiengesellschaft Procédé de réalisation d'une couche de passivation sur un corps semiconducteur en silicium
DE2951453A1 (de) * 1978-12-28 1980-07-17 Canon Kk Verfahren zur erzeugung eines films unter anwendung von glimmentladung
EP0036780A2 (fr) * 1980-03-24 1981-09-30 Hitachi, Ltd. Procédé de fabrication de transducteurs photoélectriques
EP0036780A3 (en) * 1980-03-24 1982-08-04 Hitachi, Ltd. Method of producing photoelectric transducers
EP0174553A2 (fr) * 1984-09-13 1986-03-19 Kabushiki Kaisha Nagano Keiki Seisakusho Méthode pour la production de dispositifs piézorésistifs en couche mince de silicium
EP0174553A3 (en) * 1984-09-13 1986-12-10 Kabushiki Kaisha Nagano Keiki Seisakusho Method for production of silicon thin film piezoresistive devices
FR2646557A1 (fr) * 1989-04-28 1990-11-02 Canon Kk Procede pour former un film de semiconducteur polycristallin sur un substrat isolant

Also Published As

Publication number Publication date
BE860160A (fr) 1978-04-27
DE2750597A1 (de) 1978-05-24
FR2371524B1 (fr) 1979-08-31
GB1534833A (en) 1978-12-06
DE2750597C2 (de) 1985-04-25
US4173661A (en) 1979-11-06

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