FR2362543A1 - Dispositif d'enregistrement d'images - Google Patents

Dispositif d'enregistrement d'images

Info

Publication number
FR2362543A1
FR2362543A1 FR7725028A FR7725028A FR2362543A1 FR 2362543 A1 FR2362543 A1 FR 2362543A1 FR 7725028 A FR7725028 A FR 7725028A FR 7725028 A FR7725028 A FR 7725028A FR 2362543 A1 FR2362543 A1 FR 2362543A1
Authority
FR
France
Prior art keywords
recording device
vertical transport
phase
transport lines
image recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7725028A
Other languages
English (en)
Other versions
FR2362543B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2362543A1 publication Critical patent/FR2362543A1/fr
Application granted granted Critical
Publication of FR2362543B1 publication Critical patent/FR2362543B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)

Abstract

Suivant cette invention, un dispositif d'enregistrement d'images de type interligné comporte des lignes de transport verticales (qui forment une configuration interlignée avec les colonnes de photocellules) dont chacune est munie d'une seule électrode-résistance en forme de bande. Lesdites lignes de transport verticales débouchent dans un registre conventionnel biphasé, triphasé ou quadriphasé à la sortie duquel il est possible de prélever un signal vidéo. Du fait que le cablage des lignes de transport verticales ne s'étend pas au-dessus de la partie photo-sensible du corps semi-conducteur, la photosensibilité du dispositif d'enregistrement est très élevée. Du plus, il est possible d'éviter la surillumination ponctuelle de l'image (anti-flou de points d'image). Application aux caméras de télévision en couleur.
FR7725028A 1976-08-19 1977-08-16 Dispositif d'enregistrement d'images Granted FR2362543A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB34599/76A GB1551935A (en) 1976-08-19 1976-08-19 Imaging devices

Publications (2)

Publication Number Publication Date
FR2362543A1 true FR2362543A1 (fr) 1978-03-17
FR2362543B1 FR2362543B1 (fr) 1984-06-15

Family

ID=10367652

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7725028A Granted FR2362543A1 (fr) 1976-08-19 1977-08-16 Dispositif d'enregistrement d'images

Country Status (9)

Country Link
US (1) US4168444A (fr)
JP (1) JPS5324795A (fr)
AU (1) AU508935B2 (fr)
CA (1) CA1128649A (fr)
DE (1) DE2735651A1 (fr)
FR (1) FR2362543A1 (fr)
GB (1) GB1551935A (fr)
IT (1) IT1084154B (fr)
SE (1) SE7709224L (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2517472A1 (fr) * 1981-11-30 1983-06-03 Philips Nv Dispositif a couplage de charges
FR2596583A1 (fr) * 1986-03-31 1987-10-02 Werk Fernsehelektronik Veb Dispositif de debordement de charge dans le domaine des semi-conducteurs a accumulation de charges, a encombrement reduit
WO1991006123A1 (fr) * 1989-10-12 1991-05-02 Eastman Kodak Company Capteur d'images a semiconducteurs
EP2667410A4 (fr) * 2011-01-20 2017-09-06 Hamamatsu Photonics K.K. Dispositif d'imagerie à semi-conducteurs

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1559312A (en) * 1976-08-26 1980-01-16 Philips Nv Photosensitive device arrangements and systems and photosensitive elements therefor
NL7904654A (nl) * 1979-06-14 1980-12-16 Philips Nv Televisie opneempaneel.
JPS5793568A (en) * 1980-12-02 1982-06-10 Nec Corp Semiconductor image pickup element
US4829354A (en) * 1980-12-04 1989-05-09 Westinghouse Electric Corp. Drift field switch
US4696533A (en) * 1981-01-12 1987-09-29 Massachusetts Institute Of Technology Spatial light modulator
US4865427A (en) * 1981-01-12 1989-09-12 Massachusetts Institute Of Technology Spatial light modulator
US4810663A (en) * 1981-12-07 1989-03-07 Massachusetts Institute Of Technology Method of forming conductive path by low power laser pulse
US4585490A (en) * 1981-12-07 1986-04-29 Massachusetts Institute Of Technology Method of making a conductive path in multi-layer metal structures by low power laser beam
US4636404A (en) * 1982-06-17 1987-01-13 Mass. Institute Of Technology Method and apparatus for forming low resistance lateral links in a semiconductor device
US4675714A (en) * 1983-02-15 1987-06-23 Rockwell International Corporation Gapless gate charge coupled device
GB8401805D0 (en) * 1984-01-24 1984-02-29 Int Computers Ltd Data processing apparatus
US5182623A (en) * 1989-11-13 1993-01-26 Texas Instruments Incorporated Charge coupled device/charge super sweep image system and method for making
EP0621726B1 (fr) * 1993-04-20 1999-06-16 Sony Corporation Méthode et appareillage pour un dispositif d'imagerie à l'état solide
US5705836A (en) * 1995-05-22 1998-01-06 Dalsa, Inc. Efficient charge transfer structure in large pitch charge coupled device
JP2871640B2 (ja) * 1996-12-18 1999-03-17 日本電気株式会社 固体撮像素子の駆動方法
US5965910A (en) * 1997-04-29 1999-10-12 Ohmeda Inc. Large cell charge coupled device for spectroscopy
JP3033524B2 (ja) * 1997-05-23 2000-04-17 日本電気株式会社 固体撮像装置
JP4200545B2 (ja) * 1998-06-08 2008-12-24 ソニー株式会社 固体撮像素子およびその駆動方法、並びにカメラシステム
JP4397989B2 (ja) * 1998-12-28 2010-01-13 浜松ホトニクス株式会社 半導体エネルギー検出器
US6599817B1 (en) * 2002-04-26 2003-07-29 Micron Technology, Inc. Semiconductor constructions, and methods of forming semiconductor constructions
EP2182523B1 (fr) * 2008-10-31 2013-01-09 CSEM Centre Suisse d'Electronique et de Microtechnique SA -Recherche et Développement Dispositif et procédé d'échantillonnage de charge à la base d'une ligne de transmission MOS
JP5452511B2 (ja) * 2011-01-14 2014-03-26 浜松ホトニクス株式会社 固体撮像装置
US8750040B2 (en) 2011-01-21 2014-06-10 Micron Technology, Inc. Memory devices having source lines directly coupled to body regions and methods
KR20190041308A (ko) 2017-10-12 2019-04-22 주식회사 엘지화학 슈트 타입 모노머 디스펜서

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2222756A1 (fr) * 1973-03-19 1974-10-18 Philips Nv
US3896474A (en) * 1973-09-10 1975-07-22 Fairchild Camera Instr Co Charge coupled area imaging device with column anti-blooming control

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3796932A (en) * 1971-06-28 1974-03-12 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3796933A (en) * 1971-11-10 1974-03-12 Ibm Single-phase charge-coupled semiconductor device
NL7311600A (nl) * 1973-08-23 1975-02-25 Philips Nv Ladingsgekoppelde inrichting.
FR2294546A1 (fr) * 1974-12-13 1976-07-09 Thomson Csf Dispositif a transfert de charges monophase
DE2523683C2 (de) * 1975-05-28 1985-03-07 Siemens AG, 1000 Berlin und 8000 München Integrierte Schaltung mit einer Leitung zum Transport von Ladungen zwischen Speicherelementen eines Halbleiterspeichers und einer Schreib-Lese-Schaltung
DE2606308C2 (de) * 1976-02-17 1985-05-23 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler optoelektronischer Halbleitersensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2222756A1 (fr) * 1973-03-19 1974-10-18 Philips Nv
US3896474A (en) * 1973-09-10 1975-07-22 Fairchild Camera Instr Co Charge coupled area imaging device with column anti-blooming control

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/71 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2517472A1 (fr) * 1981-11-30 1983-06-03 Philips Nv Dispositif a couplage de charges
FR2596583A1 (fr) * 1986-03-31 1987-10-02 Werk Fernsehelektronik Veb Dispositif de debordement de charge dans le domaine des semi-conducteurs a accumulation de charges, a encombrement reduit
WO1991006123A1 (fr) * 1989-10-12 1991-05-02 Eastman Kodak Company Capteur d'images a semiconducteurs
EP2667410A4 (fr) * 2011-01-20 2017-09-06 Hamamatsu Photonics K.K. Dispositif d'imagerie à semi-conducteurs

Also Published As

Publication number Publication date
SE7709224L (sv) 1978-02-20
FR2362543B1 (fr) 1984-06-15
JPS5324795A (en) 1978-03-07
CA1128649A (fr) 1982-07-27
IT1084154B (it) 1985-05-25
AU2784577A (en) 1979-02-15
AU508935B2 (en) 1980-04-17
JPS552749B2 (fr) 1980-01-22
US4168444A (en) 1979-09-18
DE2735651C2 (fr) 1990-02-01
GB1551935A (en) 1979-09-05
DE2735651A1 (de) 1978-02-23

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