FR2312861A1 - Thin film piexo-electric resonator - operates in 400 Mhz to 1 Ghz range, is mounted on substrate and has gold electrodes - Google Patents

Thin film piexo-electric resonator - operates in 400 Mhz to 1 Ghz range, is mounted on substrate and has gold electrodes

Info

Publication number
FR2312861A1
FR2312861A1 FR7516812A FR7516812A FR2312861A1 FR 2312861 A1 FR2312861 A1 FR 2312861A1 FR 7516812 A FR7516812 A FR 7516812A FR 7516812 A FR7516812 A FR 7516812A FR 2312861 A1 FR2312861 A1 FR 2312861A1
Authority
FR
France
Prior art keywords
thin film
piezo
piexo
mhz
operates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7516812A
Other languages
French (fr)
Other versions
FR2312861B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR7516812A priority Critical patent/FR2312861A1/en
Publication of FR2312861A1 publication Critical patent/FR2312861A1/en
Application granted granted Critical
Publication of FR2312861B1 publication Critical patent/FR2312861B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type

Abstract

Thin film piezo-electric resonator, electrically excited, setting up a longitudinal and a transverse mode vibration. The upper frequency limit is around 1GHz using film about 10 microns or less thick. The resonator is carried on a silicon or ceramic substrate (1) having a through hole (2) about one millimeter in dia. Over this is laid a several angstrom thick film (3) followed by an insulating layer (4) possibly SiO about 5000 angstrom thick. Above this is positioned a CdS or ZnO piezo-electric element (6) sandwiched between 1000 angstrom Au electrodes (5, 7). The piezo-electric thickness is determined by the working frequency required. The polymer layer is depositied chemically on glass and floated off this in a water bath.
FR7516812A 1975-05-29 1975-05-29 Thin film piexo-electric resonator - operates in 400 Mhz to 1 Ghz range, is mounted on substrate and has gold electrodes Granted FR2312861A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7516812A FR2312861A1 (en) 1975-05-29 1975-05-29 Thin film piexo-electric resonator - operates in 400 Mhz to 1 Ghz range, is mounted on substrate and has gold electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7516812A FR2312861A1 (en) 1975-05-29 1975-05-29 Thin film piexo-electric resonator - operates in 400 Mhz to 1 Ghz range, is mounted on substrate and has gold electrodes

Publications (2)

Publication Number Publication Date
FR2312861A1 true FR2312861A1 (en) 1976-12-24
FR2312861B1 FR2312861B1 (en) 1979-06-08

Family

ID=9155848

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7516812A Granted FR2312861A1 (en) 1975-05-29 1975-05-29 Thin film piexo-electric resonator - operates in 400 Mhz to 1 Ghz range, is mounted on substrate and has gold electrodes

Country Status (1)

Country Link
FR (1) FR2312861A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1523097A2 (en) 2003-10-07 2005-04-13 Samsung Electronics Co., Ltd. Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same
CN101059367B (en) * 2006-04-19 2011-10-05 株式会社电装 Vibration sensor and vibration detection method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1523097A2 (en) 2003-10-07 2005-04-13 Samsung Electronics Co., Ltd. Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same
EP1523097A3 (en) * 2003-10-07 2007-07-04 Samsung Electronics Co., Ltd. Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same
US7253703B2 (en) 2003-10-07 2007-08-07 Samsung Electronics Co., Ltd. Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same
CN101059367B (en) * 2006-04-19 2011-10-05 株式会社电装 Vibration sensor and vibration detection method

Also Published As

Publication number Publication date
FR2312861B1 (en) 1979-06-08

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