FR2308166A1 - Regenerateur de charge pour un dispositif semi-conducteur a transfert de charge - Google Patents

Regenerateur de charge pour un dispositif semi-conducteur a transfert de charge

Info

Publication number
FR2308166A1
FR2308166A1 FR7611392A FR7611392A FR2308166A1 FR 2308166 A1 FR2308166 A1 FR 2308166A1 FR 7611392 A FR7611392 A FR 7611392A FR 7611392 A FR7611392 A FR 7611392A FR 2308166 A1 FR2308166 A1 FR 2308166A1
Authority
FR
France
Prior art keywords
charge
transfer device
regenerator
semiconductor
charge transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7611392A
Other languages
English (en)
Other versions
FR2308166B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2308166A1 publication Critical patent/FR2308166A1/fr
Application granted granted Critical
Publication of FR2308166B1 publication Critical patent/FR2308166B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76825—Structures for regeneration, refreshing, leakage compensation or the like
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7611392A 1975-04-18 1976-04-16 Regenerateur de charge pour un dispositif semi-conducteur a transfert de charge Granted FR2308166A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/569,580 US3986059A (en) 1975-04-18 1975-04-18 Electrically pulsed charge regenerator for semiconductor charge coupled devices

Publications (2)

Publication Number Publication Date
FR2308166A1 true FR2308166A1 (fr) 1976-11-12
FR2308166B1 FR2308166B1 (fr) 1981-07-31

Family

ID=24276012

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7611392A Granted FR2308166A1 (fr) 1975-04-18 1976-04-16 Regenerateur de charge pour un dispositif semi-conducteur a transfert de charge

Country Status (6)

Country Link
US (1) US3986059A (fr)
JP (1) JPS51129145A (fr)
DE (1) DE2616476A1 (fr)
FR (1) FR2308166A1 (fr)
GB (1) GB1531042A (fr)
NL (1) NL7603910A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2316695A1 (fr) * 1975-06-30 1977-01-28 Honeywell Inf Systems Injecteurs de charge pour registre ccd
FR2373856A1 (fr) * 1976-12-08 1978-07-07 Western Electric Co Dispositif de transfert de charges ayant une entree lineaire differentielle de partage de la charge

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2539205A1 (de) * 1975-09-03 1977-03-17 Siemens Ag Regenerierverstaerker fuer ladungsverschiebeanordnungen
DE2541662A1 (de) * 1975-09-18 1977-03-24 Siemens Ag Regenerierschaltung fuer ladungsverschiebeanordnungen
DE2541686A1 (de) * 1975-09-18 1977-03-24 Siemens Ag Regenerierschaltung fuer ladungsgekoppelte elemente
DE2721039C2 (de) * 1977-05-10 1986-10-23 Siemens AG, 1000 Berlin und 8000 München Digitale Ladungsverschiebeanordnung
FR2392392A1 (fr) * 1977-05-27 1978-12-22 Commissariat Energie Atomique Circuit de mesure de charge stockee dans un d.t.c.
US4135104A (en) * 1977-12-02 1979-01-16 Trw, Inc. Regenerator circuit
NL186416C (nl) * 1981-06-05 1990-11-16 Philips Nv Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
US3789247A (en) * 1972-07-03 1974-01-29 Ibm Dynamically ordered bidirectional shift register having charge coupled devices
US3819954A (en) * 1973-02-01 1974-06-25 Gen Electric Signal level shift compensation in chargetransfer delay line circuits
US3876989A (en) * 1973-06-18 1975-04-08 Ibm Ccd optical sensor storage device having continuous light exposure compensation
US3881117A (en) * 1973-09-10 1975-04-29 Bell Telephone Labor Inc Input circuit for semiconductor charge transfer devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2316695A1 (fr) * 1975-06-30 1977-01-28 Honeywell Inf Systems Injecteurs de charge pour registre ccd
FR2373856A1 (fr) * 1976-12-08 1978-07-07 Western Electric Co Dispositif de transfert de charges ayant une entree lineaire differentielle de partage de la charge

Also Published As

Publication number Publication date
NL7603910A (nl) 1976-10-20
JPS51129145A (en) 1976-11-10
US3986059A (en) 1976-10-12
DE2616476A1 (de) 1976-10-28
FR2308166B1 (fr) 1981-07-31
GB1531042A (en) 1978-11-01

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Legal Events

Date Code Title Description
ST Notification of lapse