FR2330118A1 - Dispositif a couplage de charge - Google Patents
Dispositif a couplage de chargeInfo
- Publication number
- FR2330118A1 FR2330118A1 FR7632400A FR7632400A FR2330118A1 FR 2330118 A1 FR2330118 A1 FR 2330118A1 FR 7632400 A FR7632400 A FR 7632400A FR 7632400 A FR7632400 A FR 7632400A FR 2330118 A1 FR2330118 A1 FR 2330118A1
- Authority
- FR
- France
- Prior art keywords
- coupling device
- charge coupling
- charge
- coupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008878 coupling Effects 0.000 title 1
- 238000010168 coupling process Methods 0.000 title 1
- 238000005859 coupling reaction Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50131941A JPS5255478A (en) | 1975-10-31 | 1975-10-31 | Charge transfer device |
JP15323275A JPS5945248B2 (ja) | 1975-12-24 | 1975-12-24 | デンカテンソウソシオモチイタ トランスバ−サルフイルタ |
JP15687675A JPS5282009A (en) | 1975-12-29 | 1975-12-29 | Line-sensor with change transfer unit |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2330118A1 true FR2330118A1 (fr) | 1977-05-27 |
FR2330118B1 FR2330118B1 (fr) | 1982-01-22 |
Family
ID=27316395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7632400A Granted FR2330118A1 (fr) | 1975-10-31 | 1976-10-27 | Dispositif a couplage de charge |
Country Status (6)
Country | Link |
---|---|
US (2) | US4531225A (fr) |
CA (1) | CA1081363A (fr) |
DE (1) | DE2646301C3 (fr) |
FR (1) | FR2330118A1 (fr) |
GB (1) | GB1563341A (fr) |
NL (1) | NL182765C (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0239151A1 (fr) * | 1986-03-27 | 1987-09-30 | Koninklijke Philips Electronics N.V. | Dispositif à couplage de charges |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2646301C3 (de) * | 1975-10-31 | 1981-01-15 | Fujitsu Ltd., Kawasaki, Kanagawa (Japan) | Ladungsgekoppeltes Halbleiterbauelement |
US4371885A (en) * | 1979-10-10 | 1983-02-01 | Hughes Aircraft Company | Charge coupled device improved meander channel serial register |
JPS58184760A (ja) * | 1982-04-22 | 1983-10-28 | Sony Corp | 電荷転送素子 |
US4695715A (en) * | 1985-12-12 | 1987-09-22 | Northrop Corporation | Infrared imaging array employing metal tabs as connecting means |
US4972138A (en) * | 1987-05-11 | 1990-11-20 | Hewlett Packard Co. | Oscilloscope-like user-interface for a logic analyzer |
US4857979A (en) * | 1988-06-20 | 1989-08-15 | Ford Aerospace & Communications Corporation | Platinum silicide imager |
US5225798A (en) * | 1989-02-13 | 1993-07-06 | Electronic Decisions Incorporated | Programmable transversal filter |
JPH03114236A (ja) * | 1989-09-28 | 1991-05-15 | Sony Corp | 電荷転送装置 |
US5528643A (en) * | 1989-11-13 | 1996-06-18 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
US5182623A (en) * | 1989-11-13 | 1993-01-26 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
JP3146526B2 (ja) * | 1991-07-09 | 2001-03-19 | ソニー株式会社 | Ccd撮像素子 |
JP4471677B2 (ja) * | 2004-02-09 | 2010-06-02 | Necエレクトロニクス株式会社 | 固体撮像装置及び電荷転送部 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3858232A (en) * | 1970-02-16 | 1974-12-31 | Bell Telephone Labor Inc | Information storage devices |
US3921194A (en) * | 1970-07-20 | 1975-11-18 | Gen Electric | Method and apparatus for storing and transferring information |
NL165869C (nl) * | 1970-09-25 | 1981-05-15 | Philips Nv | Analoog schuifregister. |
US3789240A (en) * | 1970-10-26 | 1974-01-29 | Rca Corp | Bucket brigade scanning of sensor array |
US3789267A (en) * | 1971-06-28 | 1974-01-29 | Bell Telephone Labor Inc | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel |
US3906542A (en) * | 1972-06-14 | 1975-09-16 | Bell Telephone Labor Inc | Conductively connected charge coupled devices |
US3973138A (en) * | 1975-05-05 | 1976-08-03 | General Electric Company | Bucket brigade transversal filter |
DE2646301C3 (de) * | 1975-10-31 | 1981-01-15 | Fujitsu Ltd., Kawasaki, Kanagawa (Japan) | Ladungsgekoppeltes Halbleiterbauelement |
CA1101993A (fr) * | 1976-04-15 | 1981-05-26 | Kunihiro Tanikawa | Traduction non-disponible |
-
1976
- 1976-10-14 DE DE2646301A patent/DE2646301C3/de not_active Expired
- 1976-10-27 FR FR7632400A patent/FR2330118A1/fr active Granted
- 1976-10-29 GB GB45177/76A patent/GB1563341A/en not_active Expired
- 1976-10-29 NL NLAANVRAGE7612053,A patent/NL182765C/xx not_active IP Right Cessation
- 1976-10-29 CA CA264,443A patent/CA1081363A/fr not_active Expired
-
1981
- 1981-12-18 US US06/332,241 patent/US4531225A/en not_active Expired - Lifetime
-
1985
- 1985-05-08 US US06/731,797 patent/US4639940A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0239151A1 (fr) * | 1986-03-27 | 1987-09-30 | Koninklijke Philips Electronics N.V. | Dispositif à couplage de charges |
Also Published As
Publication number | Publication date |
---|---|
CA1081363A (fr) | 1980-07-08 |
US4531225A (en) | 1985-07-23 |
GB1563341A (en) | 1980-03-26 |
DE2646301C3 (de) | 1981-01-15 |
DE2646301A1 (de) | 1977-06-02 |
NL7612053A (nl) | 1977-05-03 |
DE2646301B2 (de) | 1980-05-14 |
NL182765C (nl) | 1988-05-02 |
US4639940A (en) | 1987-01-27 |
FR2330118B1 (fr) | 1982-01-22 |
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