FR2230082B1 - - Google Patents
Info
- Publication number
- FR2230082B1 FR2230082B1 FR7417098A FR7417098A FR2230082B1 FR 2230082 B1 FR2230082 B1 FR 2230082B1 FR 7417098 A FR7417098 A FR 7417098A FR 7417098 A FR7417098 A FR 7417098A FR 2230082 B1 FR2230082 B1 FR 2230082B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/143—Shadow masking
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00360996A US3851379A (en) | 1973-05-16 | 1973-05-16 | Solid state components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2230082A1 FR2230082A1 (fr) | 1974-12-13 |
| FR2230082B1 true FR2230082B1 (fr) | 1979-02-16 |
Family
ID=23420237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7417098A Expired FR2230082B1 (fr) | 1973-05-16 | 1974-05-16 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3851379A (fr) |
| JP (1) | JPS546357B2 (fr) |
| DE (1) | DE2423670A1 (fr) |
| FR (1) | FR2230082B1 (fr) |
| GB (1) | GB1465629A (fr) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2341154C2 (de) * | 1973-08-14 | 1975-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer Zweiphasen-Ladungsverschiebeanordnung |
| IE39611B1 (en) * | 1973-08-14 | 1978-11-22 | Siemens Ag | Improvements in or relating to two-phase charge coupled devices |
| US3951708A (en) * | 1974-10-15 | 1976-04-20 | Rca Corporation | Method of manufacturing a semiconductor device |
| US4070690A (en) * | 1976-08-17 | 1978-01-24 | Westinghouse Electric Corporation | VMOS transistor |
| JPS5380976A (en) * | 1976-12-25 | 1978-07-17 | Toshiba Corp | Semiconductor device |
| US4129879A (en) * | 1977-04-21 | 1978-12-12 | General Electric Company | Vertical field effect transistor |
| JPS6013313B2 (ja) * | 1977-05-19 | 1985-04-06 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JPS5733358Y2 (fr) * | 1977-12-28 | 1982-07-22 | ||
| US4206469A (en) * | 1978-09-15 | 1980-06-03 | Westinghouse Electric Corp. | Power metal-oxide-semiconductor-field-effect-transistor |
| US4198250A (en) * | 1979-02-05 | 1980-04-15 | Intel Corporation | Shadow masking process for forming source and drain regions for field-effect transistors and like regions |
| US4262296A (en) * | 1979-07-27 | 1981-04-14 | General Electric Company | Vertical field effect transistor with improved gate and channel structure |
| US4377899A (en) * | 1979-11-19 | 1983-03-29 | Sumitomo Electric Industries, Ltd. | Method of manufacturing Schottky field-effect transistors utilizing shadow masking |
| US4393391A (en) * | 1980-06-16 | 1983-07-12 | Supertex, Inc. | Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area |
| FR2507821A1 (fr) * | 1981-06-16 | 1982-12-17 | Thomson Csf | Transistor a effet de champ vertical a jonction et procede de fabrication |
| US4449285A (en) * | 1981-08-19 | 1984-05-22 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Method for producing a vertical channel transistor |
| US4570174A (en) * | 1981-08-21 | 1986-02-11 | The United States Of America As Represented By The Secretary Of The Army | Vertical MESFET with air spaced gate electrode |
| US4625388A (en) * | 1982-04-26 | 1986-12-02 | Acrian, Inc. | Method of fabricating mesa MOSFET using overhang mask and resulting structure |
| US4419811A (en) * | 1982-04-26 | 1983-12-13 | Acrian, Inc. | Method of fabricating mesa MOSFET using overhang mask |
| US4525919A (en) * | 1982-06-16 | 1985-07-02 | Raytheon Company | Forming sub-micron electrodes by oblique deposition |
| US4738936A (en) * | 1983-07-01 | 1988-04-19 | Acrian, Inc. | Method of fabrication lateral FET structure having a substrate to source contact |
| FR2555816B1 (fr) * | 1983-11-25 | 1986-04-11 | Thomson Csf | Transistor a effet de champ a structure verticale |
| FR2557368B1 (fr) * | 1983-12-27 | 1986-04-11 | Thomson Csf | Transistor a effet de champ, de structure verticale submicronique, et son procede de realisation |
| JPS6123698U (ja) * | 1984-07-19 | 1986-02-12 | 月男 原田 | 斜列型瓦焼成用保持具 |
| US4888626A (en) * | 1985-03-07 | 1989-12-19 | The United States Of America As Represented By The Secretary Of The Navy | Self-aligned gaas fet with low 1/f noise |
| US4941026A (en) * | 1986-12-05 | 1990-07-10 | General Electric Company | Semiconductor devices exhibiting minimum on-resistance |
| US5166769A (en) * | 1988-07-18 | 1992-11-24 | General Instrument Corporation | Passitvated mesa semiconductor and method for making same |
| JP2768988B2 (ja) * | 1989-08-17 | 1998-06-25 | 三菱電機株式会社 | 端面部分コーティング方法 |
| JP3461277B2 (ja) * | 1998-01-23 | 2003-10-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US6667215B2 (en) * | 2002-05-02 | 2003-12-23 | 3M Innovative Properties | Method of making transistors |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2875505A (en) * | 1952-12-11 | 1959-03-03 | Bell Telephone Labor Inc | Semiconductor translating device |
| US3387360A (en) * | 1965-04-01 | 1968-06-11 | Sony Corp | Method of making a semiconductor device |
| US3761785A (en) * | 1971-04-23 | 1973-09-25 | Bell Telephone Labor Inc | Methods for making transistor structures |
| US3689993A (en) * | 1971-07-26 | 1972-09-12 | Texas Instruments Inc | Fabrication of semiconductor devices having low thermal inpedance bonds to heat sinks |
-
1973
- 1973-05-16 US US00360996A patent/US3851379A/en not_active Expired - Lifetime
-
1974
- 1974-05-01 GB GB1911774A patent/GB1465629A/en not_active Expired
- 1974-05-15 DE DE2423670A patent/DE2423670A1/de active Pending
- 1974-05-16 FR FR7417098A patent/FR2230082B1/fr not_active Expired
- 1974-05-16 JP JP5392374A patent/JPS546357B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2423670A1 (de) | 1974-12-05 |
| JPS5019379A (fr) | 1975-02-28 |
| FR2230082A1 (fr) | 1974-12-13 |
| GB1465629A (en) | 1977-02-23 |
| US3851379A (en) | 1974-12-03 |
| JPS546357B2 (fr) | 1979-03-27 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |