FR2151130A1 - Photo mask mfr - eliminating defects by successive partial exposures - Google Patents

Photo mask mfr - eliminating defects by successive partial exposures

Info

Publication number
FR2151130A1
FR2151130A1 FR7231319A FR7231319A FR2151130A1 FR 2151130 A1 FR2151130 A1 FR 2151130A1 FR 7231319 A FR7231319 A FR 7231319A FR 7231319 A FR7231319 A FR 7231319A FR 2151130 A1 FR2151130 A1 FR 2151130A1
Authority
FR
France
Prior art keywords
photo
mfr
photo mask
successive partial
eliminating defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7231319A
Other languages
English (en)
French (fr)
Other versions
FR2151130B1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2151130A1 publication Critical patent/FR2151130A1/fr
Application granted granted Critical
Publication of FR2151130B1 publication Critical patent/FR2151130B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • ing And Chemical Polishing (AREA)
FR7231319A 1971-09-01 1972-08-29 Photo mask mfr - eliminating defects by successive partial exposures Granted FR2151130A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712143737 DE2143737A1 (de) 1971-09-01 1971-09-01 Photoaetzverfahren

Publications (2)

Publication Number Publication Date
FR2151130A1 true FR2151130A1 (en) 1973-04-13
FR2151130B1 FR2151130B1 (de) 1974-08-19

Family

ID=5818349

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7231319A Granted FR2151130A1 (en) 1971-09-01 1972-08-29 Photo mask mfr - eliminating defects by successive partial exposures

Country Status (4)

Country Link
JP (1) JPS5133445B2 (de)
DE (1) DE2143737A1 (de)
FR (1) FR2151130A1 (de)
IT (1) IT963413B (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2375665A1 (fr) * 1976-12-27 1978-07-21 Ibm Procede de lithographie par faisceau electronique
EP0000571A1 (de) * 1977-08-01 1979-02-07 Hoechst Aktiengesellschaft Verfahren zum Herstellen eines Originals
EP0037936A2 (de) * 1980-04-10 1981-10-21 Siemens Aktiengesellschaft Verfahren zur Herstellung gedruckter Leiterplatten
EP0097903A2 (de) * 1982-06-30 1984-01-11 Kabushiki Kaisha Toshiba Elektronenstrahl-Belichtungsverfahren
EP0097831A2 (de) * 1982-06-30 1984-01-11 International Business Machines Corporation Optischer Projektionsapparat und Verfahren zur Herstellung optischer Bilder
EP0448735A1 (de) * 1990-03-23 1991-10-02 Ushio Denki Kabushiki Kaisha Randbelichtungsverfahren für Halbleiterscheiben

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501805A (de) * 1973-05-14 1975-01-09
JPS5168772A (en) * 1974-12-11 1976-06-14 Matsushita Electronics Corp Handotaisochino seizohoho
JPS5348676A (en) * 1976-10-15 1978-05-02 Handotai Kenkyu Shinkokai Method of forming pattern
JPS5429976A (en) * 1977-08-10 1979-03-06 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS5676531A (en) * 1979-11-28 1981-06-24 Fujitsu Ltd Manufacture of semiconductor device
JPS5749915A (en) * 1980-09-10 1982-03-24 Sumitomo Electric Ind Ltd Image converting element
JPS59232418A (ja) * 1983-06-15 1984-12-27 Sumitomo Electric Ind Ltd 微細パタ−ン形成法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2375665A1 (fr) * 1976-12-27 1978-07-21 Ibm Procede de lithographie par faisceau electronique
EP0000571A1 (de) * 1977-08-01 1979-02-07 Hoechst Aktiengesellschaft Verfahren zum Herstellen eines Originals
EP0037936A2 (de) * 1980-04-10 1981-10-21 Siemens Aktiengesellschaft Verfahren zur Herstellung gedruckter Leiterplatten
EP0037936A3 (de) * 1980-04-10 1983-08-17 Siemens Aktiengesellschaft Verfahren zur Herstellung gedruckter Leiterplatten
EP0097903A2 (de) * 1982-06-30 1984-01-11 Kabushiki Kaisha Toshiba Elektronenstrahl-Belichtungsverfahren
EP0097831A2 (de) * 1982-06-30 1984-01-11 International Business Machines Corporation Optischer Projektionsapparat und Verfahren zur Herstellung optischer Bilder
EP0097903A3 (en) * 1982-06-30 1985-10-23 Kabushiki Kaisha Toshiba Method of electron beam exposure
EP0097831A3 (en) * 1982-06-30 1986-05-07 International Business Machines Corporation Optical projection systems and methods of producing optical images
US4644170A (en) * 1982-06-30 1987-02-17 Tokyo Shibaura Denki Kabushiki Kaisha Method of electron beam exposure
EP0448735A1 (de) * 1990-03-23 1991-10-02 Ushio Denki Kabushiki Kaisha Randbelichtungsverfahren für Halbleiterscheiben

Also Published As

Publication number Publication date
JPS5133445B2 (de) 1976-09-20
JPS4833908A (de) 1973-05-15
FR2151130B1 (de) 1974-08-19
IT963413B (it) 1974-01-10
DE2143737A1 (de) 1973-03-08

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Legal Events

Date Code Title Description
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