FR1515458A - Dispositif redresseur à semi-conducteurs en parallèle - Google Patents
Dispositif redresseur à semi-conducteurs en parallèleInfo
- Publication number
- FR1515458A FR1515458A FR69048400A FR69048400A FR1515458A FR 1515458 A FR1515458 A FR 1515458A FR 69048400 A FR69048400 A FR 69048400A FR 69048400 A FR69048400 A FR 69048400A FR 1515458 A FR1515458 A FR 1515458A
- Authority
- FR
- France
- Prior art keywords
- rectifier device
- semiconductor rectifier
- parallel semiconductor
- parallel
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
- H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/44—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements the complete device being wholly immersed in a fluid other than air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Rectifiers (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH389666A CH445628A (fr) | 1966-03-16 | 1966-03-16 | Dispositif redresseur à semi-conducteurs en parallèle |
CH389566A CH448213A (fr) | 1966-03-16 | 1966-03-16 | Dispositif de contrôle à semi-conducteurs pour courant alternatif |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1515458A true FR1515458A (fr) | 1968-03-01 |
Family
ID=25694119
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR69048400A Expired FR1515458A (fr) | 1966-03-16 | 1967-03-13 | Dispositif redresseur à semi-conducteurs en parallèle |
FR69048399A Expired FR1515457A (fr) | 1966-03-16 | 1967-03-13 | Dispositif de contrôle à semi-conducteurs pour courant alternatif |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR69048399A Expired FR1515457A (fr) | 1966-03-16 | 1967-03-13 | Dispositif de contrôle à semi-conducteurs pour courant alternatif |
Country Status (4)
Country | Link |
---|---|
CH (1) | CH448213A (fr) |
DE (2) | DE1614444C2 (fr) |
FR (2) | FR1515458A (fr) |
GB (2) | GB1155236A (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3143336A1 (de) * | 1981-10-31 | 1983-05-19 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleitergleichrichterbaueinheit |
JPS5968958A (ja) * | 1982-10-12 | 1984-04-19 | Mitsubishi Electric Corp | ゲ−トタ−ンオフサイリスタ組立体 |
US4538170A (en) * | 1983-01-03 | 1985-08-27 | General Electric Company | Power chip package |
JPS61218151A (ja) * | 1985-03-23 | 1986-09-27 | Hitachi Ltd | 半導体装置 |
DE3910470C2 (de) * | 1988-03-31 | 1995-03-09 | Toshiba Kawasaki Kk | Leistungshalbleiter-Schaltervorrichtung mit in den beteiligten Chips verringerter Wärmebelastung, insb. Wärmespannung |
DE19615112A1 (de) * | 1996-04-17 | 1997-10-23 | Asea Brown Boveri | Leistungshalbleiterbauelement |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH338528A (de) * | 1954-07-31 | 1959-05-31 | Siemens Ag | Trockengleichrichteranordnung |
BE633287A (fr) * | 1962-06-09 | |||
FR1399802A (fr) * | 1963-05-03 | 1965-05-21 | Westinghouse Electric Corp | Appareil électrique |
US3370207A (en) * | 1964-02-24 | 1968-02-20 | Gen Electric | Multilayer contact system for semiconductor devices including gold and copper layers |
FR1431304A (fr) * | 1964-03-30 | 1966-03-11 | Gen Electric | Perfectionnements apportés aux organes de contact pour dispositifs semiconducteurs |
-
1966
- 1966-03-16 CH CH389566A patent/CH448213A/fr unknown
-
1967
- 1967-03-10 DE DE1614444A patent/DE1614444C2/de not_active Expired
- 1967-03-10 DE DE1614445A patent/DE1614445C3/de not_active Expired
- 1967-03-13 FR FR69048400A patent/FR1515458A/fr not_active Expired
- 1967-03-13 FR FR69048399A patent/FR1515457A/fr not_active Expired
- 1967-03-14 GB GB1196167A patent/GB1155236A/en not_active Expired
- 1967-03-14 GB GB1196267A patent/GB1168851A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1614445C3 (de) | 1975-04-03 |
DE1614444B1 (de) | 1974-08-01 |
FR1515457A (fr) | 1968-03-01 |
GB1168851A (en) | 1969-10-29 |
DE1614445A1 (de) | 1970-09-10 |
DE1614444C2 (de) | 1978-08-31 |
DE1614445B2 (de) | 1974-08-08 |
GB1155236A (en) | 1969-06-18 |
CH448213A (fr) | 1967-12-15 |
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