FR1267417A - Dispositif à semi-conducteur et méthode de fabrication - Google Patents
Dispositif à semi-conducteur et méthode de fabricationInfo
- Publication number
- FR1267417A FR1267417A FR838054A FR838054A FR1267417A FR 1267417 A FR1267417 A FR 1267417A FR 838054 A FR838054 A FR 838054A FR 838054 A FR838054 A FR 838054A FR 1267417 A FR1267417 A FR 1267417A
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR838054A FR1267417A (fr) | 1959-09-08 | 1960-09-08 | Dispositif à semi-conducteur et méthode de fabrication |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83850459A | 1959-09-08 | 1959-09-08 | |
FR838054A FR1267417A (fr) | 1959-09-08 | 1960-09-08 | Dispositif à semi-conducteur et méthode de fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1267417A true FR1267417A (fr) | 1961-07-21 |
Family
ID=26187409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR838054A Expired FR1267417A (fr) | 1959-09-08 | 1960-09-08 | Dispositif à semi-conducteur et méthode de fabrication |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1267417A (fr) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1194500B (de) * | 1961-04-07 | 1965-06-10 | Intermetall | Halbleiterbauelement mit einer Mehrzahl von eingesetzten streifenfoermigen Zonen eines Leitfaehigkeitstyps und Verfahren zum Herstellen |
DE1202906B (de) * | 1962-05-10 | 1965-10-14 | Licentia Gmbh | Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen |
DE1211339B (de) * | 1961-10-06 | 1966-02-24 | Westinghouse Electric Corp | Steuerbares Halbleiterbauelement mit vier Zonen |
DE1216435B (de) * | 1963-03-14 | 1966-05-12 | Int Standard Electric Corp | Schaltbares Halbleiterbauelement mit vier Zonen |
US3317746A (en) * | 1963-12-10 | 1967-05-02 | Electronic Controls Corp | Semiconductor device and circuit |
US3346744A (en) * | 1964-02-07 | 1967-10-10 | Gen Electric | Power control circuits |
US3346874A (en) * | 1964-02-07 | 1967-10-10 | Gen Electric | Power control circuits |
US3351826A (en) * | 1963-02-05 | 1967-11-07 | Leroy N Hermann | Five-region, three electrode, symmetrical semiconductor device, with resistive means connecting certain regions |
US3360713A (en) * | 1964-02-07 | 1967-12-26 | Gen Electric | Power control circuits using bi-directional controllable semiconductor switching devices |
DE1265875B (de) * | 1963-01-05 | 1968-04-11 | Licentia Gmbh | Steuerbarer Halbleitergleichrichter |
US3381161A (en) * | 1963-08-01 | 1968-04-30 | Jean Pierre Biet | Device for line scanning in a television receiver using a single gate symmetrically conducting turn-on turn-off five layer semiconductor device |
US3391310A (en) * | 1964-01-13 | 1968-07-02 | Gen Electric | Semiconductor switch |
DE1275597B (de) * | 1963-05-07 | 1968-08-22 | Ibm | Elektronischer Schalter mit einem oberflaechenpotentialgesteuerten Transistor |
US3409810A (en) * | 1964-03-31 | 1968-11-05 | Texas Instruments Inc | Gated symmetrical five layer switch with shorted emitters |
US3439183A (en) * | 1966-03-16 | 1969-04-15 | Intern Electric Fence Co Inc | Solid state fence controller |
DE1464983B1 (de) * | 1963-12-19 | 1970-01-15 | Gen Electric | In zwei Richtungen schaltbares und steuerbares Halbleiterbauelement |
DE1639306B1 (de) * | 1963-05-30 | 1971-10-07 | Licentia Gmbh | Verfahren zum herstellen eines gemeinsamen kontaktes an min destens zwei benachbarten zonen entgegengesetzten leitungs typs eines steuerbaren halbleiterbauelements sowie danach hergestelltes halbleiterbauelement |
-
1960
- 1960-09-08 FR FR838054A patent/FR1267417A/fr not_active Expired
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1194500B (de) * | 1961-04-07 | 1965-06-10 | Intermetall | Halbleiterbauelement mit einer Mehrzahl von eingesetzten streifenfoermigen Zonen eines Leitfaehigkeitstyps und Verfahren zum Herstellen |
DE1211339B (de) * | 1961-10-06 | 1966-02-24 | Westinghouse Electric Corp | Steuerbares Halbleiterbauelement mit vier Zonen |
DE1202906B (de) * | 1962-05-10 | 1965-10-14 | Licentia Gmbh | Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen |
DE1265875B (de) * | 1963-01-05 | 1968-04-11 | Licentia Gmbh | Steuerbarer Halbleitergleichrichter |
US3351826A (en) * | 1963-02-05 | 1967-11-07 | Leroy N Hermann | Five-region, three electrode, symmetrical semiconductor device, with resistive means connecting certain regions |
DE1216435B (de) * | 1963-03-14 | 1966-05-12 | Int Standard Electric Corp | Schaltbares Halbleiterbauelement mit vier Zonen |
DE1275597C2 (de) * | 1963-05-07 | 1969-04-03 | Ibm | Elektronischer Schalter mit einem oberflaechenpotentialgesteuerten Transistor |
DE1275597B (de) * | 1963-05-07 | 1968-08-22 | Ibm | Elektronischer Schalter mit einem oberflaechenpotentialgesteuerten Transistor |
DE1639306B1 (de) * | 1963-05-30 | 1971-10-07 | Licentia Gmbh | Verfahren zum herstellen eines gemeinsamen kontaktes an min destens zwei benachbarten zonen entgegengesetzten leitungs typs eines steuerbaren halbleiterbauelements sowie danach hergestelltes halbleiterbauelement |
US3381161A (en) * | 1963-08-01 | 1968-04-30 | Jean Pierre Biet | Device for line scanning in a television receiver using a single gate symmetrically conducting turn-on turn-off five layer semiconductor device |
US3317746A (en) * | 1963-12-10 | 1967-05-02 | Electronic Controls Corp | Semiconductor device and circuit |
DE1464983B1 (de) * | 1963-12-19 | 1970-01-15 | Gen Electric | In zwei Richtungen schaltbares und steuerbares Halbleiterbauelement |
US3391310A (en) * | 1964-01-13 | 1968-07-02 | Gen Electric | Semiconductor switch |
US3360713A (en) * | 1964-02-07 | 1967-12-26 | Gen Electric | Power control circuits using bi-directional controllable semiconductor switching devices |
US3346874A (en) * | 1964-02-07 | 1967-10-10 | Gen Electric | Power control circuits |
US3346744A (en) * | 1964-02-07 | 1967-10-10 | Gen Electric | Power control circuits |
US3409810A (en) * | 1964-03-31 | 1968-11-05 | Texas Instruments Inc | Gated symmetrical five layer switch with shorted emitters |
US3439183A (en) * | 1966-03-16 | 1969-04-15 | Intern Electric Fence Co Inc | Solid state fence controller |
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