FR1265016A - Dispositif semiconducteur et son procédé de fabrication - Google Patents

Dispositif semiconducteur et son procédé de fabrication

Info

Publication number
FR1265016A
FR1265016A FR835771A FR835771A FR1265016A FR 1265016 A FR1265016 A FR 1265016A FR 835771 A FR835771 A FR 835771A FR 835771 A FR835771 A FR 835771A FR 1265016 A FR1265016 A FR 1265016A
Authority
FR
France
Prior art keywords
semiconductor device
manufacturing process
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR835771A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1265016A publication Critical patent/FR1265016A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/87Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)
FR835771A 1959-11-17 1960-08-12 Dispositif semiconducteur et son procédé de fabrication Expired FR1265016A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US853484A US3176147A (en) 1959-11-17 1959-11-17 Parallel connected two-terminal semiconductor devices of different negative resistance characteristics

Publications (1)

Publication Number Publication Date
FR1265016A true FR1265016A (fr) 1961-06-23

Family

ID=25316150

Family Applications (1)

Application Number Title Priority Date Filing Date
FR835771A Expired FR1265016A (fr) 1959-11-17 1960-08-12 Dispositif semiconducteur et son procédé de fabrication

Country Status (4)

Country Link
US (1) US3176147A (fr)
DE (1) DE1163459B (fr)
FR (1) FR1265016A (fr)
GB (1) GB880216A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208408B (de) * 1961-06-05 1966-01-05 Gen Electric Steuerbares und schaltbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL277300A (fr) * 1961-04-20
US3244949A (en) * 1962-03-16 1966-04-05 Fairchild Camera Instr Co Voltage regulator
US3317801A (en) * 1963-06-19 1967-05-02 Jr Freeman D Shepherd Tunneling enhanced transistor
US3391310A (en) * 1964-01-13 1968-07-02 Gen Electric Semiconductor switch
US3328584A (en) * 1964-01-17 1967-06-27 Int Rectifier Corp Five-layer light switch
US3284681A (en) * 1964-07-01 1966-11-08 Gen Electric Pnpn semiconductor switching devices with stabilized firing characteristics
US3268782A (en) * 1965-02-02 1966-08-23 Int Rectifier Corp High rate of rise of current-fourlayer device
US3445687A (en) * 1966-12-15 1969-05-20 Int Rectifier Corp Adjustable variable voltage responsive two-terminal semiconductor switch device
US3489962A (en) * 1966-12-19 1970-01-13 Gen Electric Semiconductor switching device with emitter gate
CH516874A (de) * 1970-05-26 1971-12-15 Bbc Brown Boveri & Cie Halbleiterbauelement
GB1303337A (fr) * 1970-10-06 1973-01-17
FR2458905A1 (fr) * 1979-06-06 1981-01-02 Silicium Semiconducteur Ssc Diode de shockley et son procede de fabrication

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048359B (fr) * 1952-07-22
NL104654C (fr) * 1952-12-31 1900-01-01
US2862160A (en) * 1955-10-18 1958-11-25 Hoffmann Electronics Corp Light sensitive device and method of making the same
US2877359A (en) * 1956-04-20 1959-03-10 Bell Telephone Labor Inc Semiconductor signal storage device
US2866140A (en) * 1957-01-11 1958-12-23 Texas Instruments Inc Grown junction transistors
US2900286A (en) * 1957-11-19 1959-08-18 Rca Corp Method of manufacturing semiconductive bodies
US2953735A (en) * 1958-06-30 1960-09-20 Borg Warner Polyphase static inverter
NL265766A (fr) * 1960-06-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208408B (de) * 1961-06-05 1966-01-05 Gen Electric Steuerbares und schaltbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps

Also Published As

Publication number Publication date
GB880216A (en) 1961-10-18
US3176147A (en) 1965-03-30
DE1163459B (de) 1964-02-20

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