FR1201191A - Procédé et dispositif pour appliquer par fusion des contacts sur des corps semi-conducteurs - Google Patents

Procédé et dispositif pour appliquer par fusion des contacts sur des corps semi-conducteurs

Info

Publication number
FR1201191A
FR1201191A FR1201191DA FR1201191A FR 1201191 A FR1201191 A FR 1201191A FR 1201191D A FR1201191D A FR 1201191DA FR 1201191 A FR1201191 A FR 1201191A
Authority
FR
France
Prior art keywords
semiconductor bodies
fusing
contacts
fusing contacts
bodies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1201191A publication Critical patent/FR1201191A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Contacts (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1201191D 1957-08-08 1958-08-07 Procédé et dispositif pour appliquer par fusion des contacts sur des corps semi-conducteurs Expired FR1201191A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL219744 1957-08-08

Publications (1)

Publication Number Publication Date
FR1201191A true FR1201191A (fr) 1959-12-29

Family

ID=19750946

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1201191D Expired FR1201191A (fr) 1957-08-08 1958-08-07 Procédé et dispositif pour appliquer par fusion des contacts sur des corps semi-conducteurs

Country Status (7)

Country Link
US (1) US2979024A (fr)
BE (1) BE570141A (fr)
CH (1) CH363095A (fr)
DE (1) DE1087705B (fr)
FR (1) FR1201191A (fr)
GB (1) GB884557A (fr)
NL (2) NL219744A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3105784A (en) * 1960-12-23 1963-10-01 Merck & Co Inc Process of making semiconductors
DE1125084B (de) * 1961-01-31 1962-03-08 Telefunken Patent Verfahren zum Auflegieren von Legierungsmaterial auf einen Halbleiterkoerper
GB1001517A (en) * 1961-09-12 1965-08-18 Mullard Ltd Improvements in and relating to jigs for alloying material to semiconductor bodies
GB1074285A (en) * 1963-01-09 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
US3302612A (en) * 1963-09-12 1967-02-07 Guy R Stutzman Pattern masks and method for making same
US4530861A (en) * 1983-12-19 1985-07-23 General Electric Company Method and apparatus for masking a surface of a blade member
US7946470B2 (en) * 2005-12-30 2011-05-24 Semx Corporation Method for depositing solder material on an electronic component part using separators

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1670700A (en) * 1925-04-28 1928-05-22 Gen Electric Method of electric welding
US2506047A (en) * 1946-12-31 1950-05-02 Sylvania Electric Prod Protective device for use in soldering operations
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
NL180482B (nl) * 1952-08-14 Basf Ag Werkwijze voor het afscheiden en regenereren van rodium bevattende katalysatoren uit bij hydroformyleringen verkregen destillatieresiduen.
GB794128A (en) * 1955-08-04 1958-04-30 Gen Electric Co Ltd Improvements in or relating to methods of forming a junction in a semiconductor
DE1153119B (de) * 1955-08-05 1963-08-22 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung
US2835615A (en) * 1956-01-23 1958-05-20 Clevite Corp Method of producing a semiconductor alloy junction
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
US2858246A (en) * 1957-04-22 1958-10-28 Bell Telephone Labor Inc Silicon single crystal conductor devices

Also Published As

Publication number Publication date
DE1087705B (de) 1960-08-25
NL108503C (fr)
US2979024A (en) 1961-04-11
CH363095A (de) 1962-07-15
BE570141A (fr)
NL219744A (fr)
GB884557A (en) 1961-12-13

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