GB884557A - Improvements in or relating to semi-conductive devices - Google Patents

Improvements in or relating to semi-conductive devices

Info

Publication number
GB884557A
GB884557A GB25039/58A GB2503958A GB884557A GB 884557 A GB884557 A GB 884557A GB 25039/58 A GB25039/58 A GB 25039/58A GB 2503958 A GB2503958 A GB 2503958A GB 884557 A GB884557 A GB 884557A
Authority
GB
United Kingdom
Prior art keywords
semi
accommodating
mica
aug
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25039/58A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB884557A publication Critical patent/GB884557A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Contacts (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

884,557. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. Aug. 5, 1958 [Aug. 8, 1957], No. 25039/58. Class 37. A jig for manufacturing a semi-conductor device has a space for accommodating a semiconductor body and a mica part with an aperture for accommodating material to be alloyed to the body and defining the area over which alloying is to be effected. As shown, a graphite or chrome-iron plate 1 contains a slice of ntype germanium in the space 2 and a mica plate 4 has two apertures 5 accommodating two globules 6 of indium. The complete arrangement is heated in an oven so that alloying takes place. Holes with a diameter of 100Á and with a separation of 50Á may be punched in a mica plate 200Á thick.
GB25039/58A 1957-08-08 1958-08-05 Improvements in or relating to semi-conductive devices Expired GB884557A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL219744 1957-08-08

Publications (1)

Publication Number Publication Date
GB884557A true GB884557A (en) 1961-12-13

Family

ID=19750946

Family Applications (1)

Application Number Title Priority Date Filing Date
GB25039/58A Expired GB884557A (en) 1957-08-08 1958-08-05 Improvements in or relating to semi-conductive devices

Country Status (7)

Country Link
US (1) US2979024A (en)
BE (1) BE570141A (en)
CH (1) CH363095A (en)
DE (1) DE1087705B (en)
FR (1) FR1201191A (en)
GB (1) GB884557A (en)
NL (2) NL219744A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1177254B (en) * 1961-09-12 1964-09-03 Philips Nv Alloy form and method for manufacturing semiconductor devices

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3105784A (en) * 1960-12-23 1963-10-01 Merck & Co Inc Process of making semiconductors
DE1125084B (en) * 1961-01-31 1962-03-08 Telefunken Patent Method for alloying alloy material on a semiconductor body
GB1074285A (en) * 1963-01-09 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
US3302612A (en) * 1963-09-12 1967-02-07 Guy R Stutzman Pattern masks and method for making same
US4530861A (en) * 1983-12-19 1985-07-23 General Electric Company Method and apparatus for masking a surface of a blade member
US7946470B2 (en) * 2005-12-30 2011-05-24 Semx Corporation Method for depositing solder material on an electronic component part using separators

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1670700A (en) * 1925-04-28 1928-05-22 Gen Electric Method of electric welding
US2506047A (en) * 1946-12-31 1950-05-02 Sylvania Electric Prod Protective device for use in soldering operations
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
NL180482B (en) * 1952-08-14 Basf Ag PROCEDURE FOR SEPARATING AND REGENERATION OF RODIUM-CONTAINING CATALYSTS FROM DISTILLATION RESIDUES OBTAINED FROM HYDROFORMYLATIONS.
GB794128A (en) * 1955-08-04 1958-04-30 Gen Electric Co Ltd Improvements in or relating to methods of forming a junction in a semiconductor
DE1153119B (en) * 1955-08-05 1963-08-22 Siemens Ag Method for manufacturing a semiconductor device
US2835615A (en) * 1956-01-23 1958-05-20 Clevite Corp Method of producing a semiconductor alloy junction
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
US2858246A (en) * 1957-04-22 1958-10-28 Bell Telephone Labor Inc Silicon single crystal conductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1177254B (en) * 1961-09-12 1964-09-03 Philips Nv Alloy form and method for manufacturing semiconductor devices

Also Published As

Publication number Publication date
DE1087705B (en) 1960-08-25
FR1201191A (en) 1959-12-29
NL108503C (en)
US2979024A (en) 1961-04-11
CH363095A (en) 1962-07-15
BE570141A (en)
NL219744A (en)

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