FI20155966A1 - - Google Patents
Info
- Publication number
- FI20155966A1 FI20155966A1 FI20155966A FI20155966A FI20155966A1 FI 20155966 A1 FI20155966 A1 FI 20155966A1 FI 20155966 A FI20155966 A FI 20155966A FI 20155966 A FI20155966 A FI 20155966A FI 20155966 A1 FI20155966 A1 FI 20155966A1
- Authority
- FI
- Finland
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ZA201303911 | 2013-05-29 | ||
| PCT/IB2014/061713 WO2014191892A1 (en) | 2013-05-29 | 2014-05-26 | A field effect transistor and a gas detector including a plurality of field effect transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FI20155966A1 true FI20155966A1 (en) | 2015-12-18 |
| FI130841B1 FI130841B1 (en) | 2024-04-18 |
Family
ID=50884974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI20155966A FI130841B1 (en) | 2013-05-29 | 2014-05-26 | A field effect transistor and a gas detector including a plurality of field effect transistors |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9683957B2 (en) |
| JP (1) | JP6473444B2 (en) |
| KR (1) | KR102234452B1 (en) |
| CN (1) | CN105474006B (en) |
| DE (1) | DE112014002575T5 (en) |
| FI (1) | FI130841B1 (en) |
| TW (1) | TWI653447B (en) |
| WO (1) | WO2014191892A1 (en) |
| ZA (1) | ZA201508707B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| LT6248B (en) * | 2014-04-01 | 2016-02-10 | Kauno technologijos universitetas | Electronic nose for determination of meat freshness and spoilage |
| US10209212B2 (en) | 2016-02-15 | 2019-02-19 | Infineon Technologies Ag | Sensor arrangement for particle analysis and a method for particle analysis |
| US10514357B2 (en) * | 2016-03-25 | 2019-12-24 | Honda Motor Co., Ltd. | Chemical sensor based on layered nanoribbons |
| WO2020047606A1 (en) * | 2018-09-06 | 2020-03-12 | The University Of Sydney | Systems, sensors and methods for determining a concentration of an analyte |
| CN110429030B (en) * | 2019-07-30 | 2022-04-01 | 中国电子科技集团公司第十三研究所 | Preparation method of nano gate and nano gate device |
| CN112505108B (en) * | 2020-12-18 | 2021-07-06 | 联合微电子中心有限责任公司 | Gas detection system and method |
| WO2023242297A1 (en) * | 2022-06-15 | 2023-12-21 | Zhen Zhang | Fet gas sensor device |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6423583B1 (en) * | 2001-01-03 | 2002-07-23 | International Business Machines Corporation | Methodology for electrically induced selective breakdown of nanotubes |
| US7948041B2 (en) * | 2005-05-19 | 2011-05-24 | Nanomix, Inc. | Sensor having a thin-film inhibition layer |
| JP4338948B2 (en) * | 2002-08-01 | 2009-10-07 | 株式会社半導体エネルギー研究所 | Method for producing carbon nanotube semiconductor device |
| US20060263255A1 (en) * | 2002-09-04 | 2006-11-23 | Tzong-Ru Han | Nanoelectronic sensor system and hydrogen-sensitive functionalization |
| DE10325150A1 (en) * | 2003-05-31 | 2004-12-30 | Hahn-Meitner-Institut Berlin Gmbh | Parameterized semiconductor composite structure with integrated doping channels, process for the production and use thereof |
| JP4669213B2 (en) * | 2003-08-29 | 2011-04-13 | 独立行政法人科学技術振興機構 | Field effect transistor, single electron transistor and sensor using the same |
| JP2007505323A (en) * | 2003-09-12 | 2007-03-08 | ナノミックス・インコーポレーテッド | Nanoelectronic sensor for carbon dioxide |
| EP1695072A4 (en) * | 2003-12-18 | 2011-08-10 | Nanomix Inc | Nanoelectronic capnometer adapter |
| US20070259359A1 (en) * | 2004-08-24 | 2007-11-08 | Mikhail Briman | Nanoelectronic Detection of Biomolecules Employing Analyte Amplification and Reporters |
| JP2008511008A (en) * | 2004-08-24 | 2008-04-10 | ナノミックス・インコーポレーテッド | Nanotube sensor device for DNA detection |
| JP2008525822A (en) * | 2004-12-28 | 2008-07-17 | ナノミックス・インコーポレーテッド | Nanoelectronic device for DNA detection / recognition of polynucleotide sequences |
| US20100127241A1 (en) * | 2005-02-25 | 2010-05-27 | The Regents Of The University Of California | Electronic Devices with Carbon Nanotube Components |
| WO2006103872A1 (en) | 2005-03-28 | 2006-10-05 | National University Corporation Hokkaido University | Carbon nano tube field effect transistor |
| WO2007136523A2 (en) * | 2006-05-18 | 2007-11-29 | Nanomix, Inc. | Nanoelectronic breath analyzer and asthma monitor |
| KR101140049B1 (en) * | 2010-03-23 | 2012-05-02 | 서울대학교산학협력단 | A High-Performance VEGF Aptamer Funtionalized Polypyrrole Nanotube Biosensor |
| DE102010038725A1 (en) * | 2010-07-30 | 2012-02-02 | Robert Bosch Gmbh | Gas detecting device for use as e.g. chemical FET, in metal insulator semiconductor component, has metal film comprising aperture with width that includes ratio to thickness of insulator material, where material lies in region of aperture |
| KR102227591B1 (en) * | 2012-10-17 | 2021-03-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
-
2014
- 2014-05-26 JP JP2016516274A patent/JP6473444B2/en active Active
- 2014-05-26 US US14/894,460 patent/US9683957B2/en active Active
- 2014-05-26 CN CN201480031221.3A patent/CN105474006B/en active Active
- 2014-05-26 DE DE112014002575.5T patent/DE112014002575T5/en active Pending
- 2014-05-26 KR KR1020157036846A patent/KR102234452B1/en active IP Right Grant
- 2014-05-26 WO PCT/IB2014/061713 patent/WO2014191892A1/en active Application Filing
- 2014-05-26 FI FI20155966A patent/FI130841B1/en active
- 2014-05-28 TW TW103118607A patent/TWI653447B/en active
-
2015
- 2015-11-26 ZA ZA2015/08707A patent/ZA201508707B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160040473A (en) | 2016-04-14 |
| WO2014191892A1 (en) | 2014-12-04 |
| DE112014002575T5 (en) | 2016-03-10 |
| CN105474006A (en) | 2016-04-06 |
| FI130841B1 (en) | 2024-04-18 |
| TW201504623A (en) | 2015-02-01 |
| US20160116434A1 (en) | 2016-04-28 |
| CN105474006B (en) | 2017-10-27 |
| TWI653447B (en) | 2019-03-11 |
| ZA201508707B (en) | 2017-01-25 |
| US9683957B2 (en) | 2017-06-20 |
| JP2016527476A (en) | 2016-09-08 |
| KR102234452B1 (en) | 2021-04-01 |
| JP6473444B2 (en) | 2019-02-20 |