ES482959A1 - Procedimiento para la fabricacion de dispositivos mediante mordentado con plasma, de superficies ricas en aluminio - Google Patents
Procedimiento para la fabricacion de dispositivos mediante mordentado con plasma, de superficies ricas en aluminioInfo
- Publication number
- ES482959A1 ES482959A1 ES482959A ES482959A ES482959A1 ES 482959 A1 ES482959 A1 ES 482959A1 ES 482959 A ES482959 A ES 482959A ES 482959 A ES482959 A ES 482959A ES 482959 A1 ES482959 A1 ES 482959A1
- Authority
- ES
- Spain
- Prior art keywords
- plasma etching
- device fabrication
- bcl3
- expedited
- etchants
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Procedimiento para la fabricación de dispositivos mediante mordentado con plasma, de superficies ricas en aluminio, del tipo que comprende por lo menos una operación durante la cuál el dispositivo én fabricación comprende una superficie de material de la cual por lo menos ciertas regiones elegidas se han de mordentar. cuyo dispositivo o artículo se mordente dentro de un ambiente de plasma contenido en el interior de un aparato, resultando el plasma de la imposición de un campo eléctrico a través de una mezcla gaseosa entre electrodos, comprendiendo el material que se mordente una composición elemental rica en aluminio, debiéndose principalmente el mordentado a reacción química con el material que se mordenta; caracterizado porque para mejorar el control sobre el perfil del mordentado del material rico en aluminio elemental, por ejemplo para obtener paredes verticales rectas, con formación de rebajo positivo o formación de rebajo negativo, de dichas regiones elegidas, la mezcla gaseosa contiene una mezcla de BCl3 y Cl2 que en el plasma da por resultado la reacción química en la cual el contenido de Cl en la mezcla gaseosa es de 0,1% en volumen al 20% en volumen expresado como porcentaje del contenido total de BCl3 más Cl2 y, además, porque la presión y la potencia dentro del ambiente del plasma se mantienen dentro de los límites del orden de 0,05 torr a 1 torr y de 0,035 watios/cm2 a 0,7 watios/cm2 respectivamente.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/929,567 US4256534A (en) | 1978-07-31 | 1978-07-31 | Device fabrication by plasma etching |
Publications (1)
Publication Number | Publication Date |
---|---|
ES482959A1 true ES482959A1 (es) | 1980-03-01 |
Family
ID=25458063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES482959A Expired ES482959A1 (es) | 1978-07-31 | 1979-07-30 | Procedimiento para la fabricacion de dispositivos mediante mordentado con plasma, de superficies ricas en aluminio |
Country Status (14)
Country | Link |
---|---|
US (1) | US4256534A (es) |
JP (1) | JPS5914111B2 (es) |
AU (1) | AU524453B2 (es) |
BE (1) | BE877895A (es) |
CA (1) | CA1121306A (es) |
DE (1) | DE2930291A1 (es) |
ES (1) | ES482959A1 (es) |
FR (1) | FR2445622A1 (es) |
GB (1) | GB2026393B (es) |
IE (1) | IE48605B1 (es) |
IL (1) | IL57890A (es) |
IT (1) | IT1123506B (es) |
NL (1) | NL189738B (es) |
SE (1) | SE442357B (es) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4569718A (en) * | 1980-08-22 | 1986-02-11 | At&T Bell Laboratories | Method for plasma etching III-V semiconductors with a BCl3 -Cl2 gas |
JPS5747876A (en) * | 1980-09-03 | 1982-03-18 | Toshiba Corp | Plasma etching apparatus and method |
GB2087315B (en) * | 1980-10-14 | 1984-07-18 | Branson Int Plasma | Plasma etching of aluminum |
US4380488A (en) * | 1980-10-14 | 1983-04-19 | Branson International Plasma Corporation | Process and gas mixture for etching aluminum |
US4373990A (en) * | 1981-01-08 | 1983-02-15 | Bell Telephone Laboratories, Incorporated | Dry etching aluminum |
US4343677A (en) * | 1981-03-23 | 1982-08-10 | Bell Telephone Laboratories, Incorporated | Method for patterning films using reactive ion etching thereof |
US4351696A (en) * | 1981-10-28 | 1982-09-28 | Fairchild Camera & Instrument Corp. | Corrosion inhibition of aluminum or aluminum alloy film utilizing bromine-containing plasma |
US4372806A (en) * | 1981-12-30 | 1983-02-08 | Rca Corporation | Plasma etching technique |
US4370196A (en) * | 1982-03-25 | 1983-01-25 | Rca Corporation | Anisotropic etching of aluminum |
DE3215410A1 (de) * | 1982-04-24 | 1983-10-27 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen von oeffnungen mit hilfe einer maske in einer auf einer unterlage befindlichen schicht |
US4426246A (en) * | 1982-07-26 | 1984-01-17 | Bell Telephone Laboratories, Incorporated | Plasma pretreatment with BCl3 to remove passivation formed by fluorine-etch |
US4412885A (en) * | 1982-11-03 | 1983-11-01 | Applied Materials, Inc. | Materials and methods for plasma etching of aluminum and aluminum alloys |
EP0117258B1 (de) * | 1983-02-23 | 1987-05-20 | Ibm Deutschland Gmbh | Verfahren zur Herstellung von haftfesten Metallschichten auf Kunststoffsubstraten |
US4505782A (en) * | 1983-03-25 | 1985-03-19 | Lfe Corporation | Plasma reactive ion etching of aluminum and aluminum alloys |
US4778562A (en) * | 1984-08-13 | 1988-10-18 | General Motors Corporation | Reactive ion etching of tin oxide films using neutral reactant gas containing hydrogen |
US4544444A (en) * | 1984-08-15 | 1985-10-01 | General Motors Corporation | Reactive ion etching of tin oxide films using silicon tetrachloride reactant gas |
JPS6184835A (ja) * | 1984-10-02 | 1986-04-30 | Matsushita Electric Ind Co Ltd | アルミニウムおよびアルミニウム―シリコン合金の反応性イオンエッチング方法 |
US4943417A (en) * | 1987-02-25 | 1990-07-24 | Adir Jacob | Apparatus for dry sterilization of medical devices and materials |
US5087418A (en) * | 1987-02-25 | 1992-02-11 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US5200158A (en) * | 1987-02-25 | 1993-04-06 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US5171525A (en) * | 1987-02-25 | 1992-12-15 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US4976920A (en) * | 1987-07-14 | 1990-12-11 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US4818488A (en) * | 1987-02-25 | 1989-04-04 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US4917586A (en) * | 1987-02-25 | 1990-04-17 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US4801427A (en) * | 1987-02-25 | 1989-01-31 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US4931261A (en) * | 1987-02-25 | 1990-06-05 | Adir Jacob | Apparatus for dry sterilization of medical devices and materials |
US4828649A (en) * | 1987-07-16 | 1989-05-09 | Texas Instruments Incorporated | Method for etching an aluminum film doped with silicon |
US4919748A (en) * | 1989-06-30 | 1990-04-24 | At&T Bell Laboratories | Method for tapered etching |
JPH03156927A (ja) * | 1989-10-24 | 1991-07-04 | Hewlett Packard Co <Hp> | アルミ・メタライゼーションのパターン形成方法 |
US5318664A (en) * | 1990-06-25 | 1994-06-07 | General Electric Company | Patterning of indium-tin oxide via selective reactive ion etching |
US5211804A (en) * | 1990-10-16 | 1993-05-18 | Oki Electric Industry, Co., Ltd. | Method for dry etching |
US5290396A (en) * | 1991-06-06 | 1994-03-01 | Lsi Logic Corporation | Trench planarization techniques |
US5413966A (en) * | 1990-12-20 | 1995-05-09 | Lsi Logic Corporation | Shallow trench etch |
DE4107006A1 (de) * | 1991-03-05 | 1992-09-10 | Siemens Ag | Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen |
US5248625A (en) * | 1991-06-06 | 1993-09-28 | Lsi Logic Corporation | Techniques for forming isolation structures |
US5252503A (en) * | 1991-06-06 | 1993-10-12 | Lsi Logic Corporation | Techniques for forming isolation structures |
US5225358A (en) * | 1991-06-06 | 1993-07-06 | Lsi Logic Corporation | Method of forming late isolation with polishing |
US5286337A (en) * | 1993-01-25 | 1994-02-15 | North American Philips Corporation | Reactive ion etching or indium tin oxide |
US5779926A (en) * | 1994-09-16 | 1998-07-14 | Applied Materials, Inc. | Plasma process for etching multicomponent alloys |
JPH08130206A (ja) * | 1994-10-31 | 1996-05-21 | Sony Corp | Al系金属層のプラズマエッチング方法 |
JPH07169756A (ja) * | 1994-11-07 | 1995-07-04 | Semiconductor Energy Lab Co Ltd | プラズマエッチング方法 |
US7294578B1 (en) | 1995-06-02 | 2007-11-13 | Micron Technology, Inc. | Use of a plasma source to form a layer during the formation of a semiconductor device |
JPH08306675A (ja) * | 1996-05-13 | 1996-11-22 | Semiconductor Energy Lab Co Ltd | プラズマエッチング方法 |
US6008140A (en) | 1997-08-13 | 1999-12-28 | Applied Materials, Inc. | Copper etch using HCI and HBr chemistry |
US6165375A (en) * | 1997-09-23 | 2000-12-26 | Cypress Semiconductor Corporation | Plasma etching method |
TW505984B (en) | 1997-12-12 | 2002-10-11 | Applied Materials Inc | Method of etching patterned layers useful as masking during subsequent etching or for damascene structures |
US6143476A (en) * | 1997-12-12 | 2000-11-07 | Applied Materials Inc | Method for high temperature etching of patterned layers using an organic mask stack |
US5994235A (en) | 1998-06-24 | 1999-11-30 | Lam Research Corporation | Methods for etching an aluminum-containing layer |
EP1394835A1 (en) * | 2002-08-29 | 2004-03-03 | STMicroelectronics S.r.l. | A method and apparatus for detecting a leak of external air into a plasma reactor |
US20040192059A1 (en) * | 2003-03-28 | 2004-09-30 | Mosel Vitelic, Inc. | Method for etching a titanium-containing layer prior to etching an aluminum layer in a metal stack |
DE10324570A1 (de) * | 2003-05-30 | 2004-12-23 | Daimlerchrysler Ag | Vorrichtung und Verfahren zur Oberflächenbehandlung einer metallischen Laufbahn einer Maschine mittels Plasmatechnologie |
US9051655B2 (en) | 2013-09-16 | 2015-06-09 | Applied Materials, Inc. | Boron ionization for aluminum oxide etch enhancement |
US9484216B1 (en) | 2015-06-02 | 2016-11-01 | Sandia Corporation | Methods for dry etching semiconductor devices |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615956A (en) * | 1969-03-27 | 1971-10-26 | Signetics Corp | Gas plasma vapor etching process |
US3994793A (en) * | 1975-05-22 | 1976-11-30 | International Business Machines Corporation | Reactive ion etching of aluminum |
CA1059882A (en) * | 1976-08-16 | 1979-08-07 | Northern Telecom Limited | Gaseous plasma etching of aluminum and aluminum oxide |
US4030967A (en) * | 1976-08-16 | 1977-06-21 | Northern Telecom Limited | Gaseous plasma etching of aluminum and aluminum oxide |
-
1978
- 1978-07-31 US US05/929,567 patent/US4256534A/en not_active Expired - Lifetime
-
1979
- 1979-07-19 CA CA000332162A patent/CA1121306A/en not_active Expired
- 1979-07-23 SE SE7906298A patent/SE442357B/sv unknown
- 1979-07-25 FR FR7919157A patent/FR2445622A1/fr active Granted
- 1979-07-25 IL IL57890A patent/IL57890A/xx unknown
- 1979-07-25 AU AU49236/79A patent/AU524453B2/en not_active Expired
- 1979-07-25 BE BE0/196455A patent/BE877895A/xx not_active IP Right Cessation
- 1979-07-26 DE DE19792930291 patent/DE2930291A1/de not_active Ceased
- 1979-07-26 GB GB7926036A patent/GB2026393B/en not_active Expired
- 1979-07-30 ES ES482959A patent/ES482959A1/es not_active Expired
- 1979-07-30 IT IT24774/79A patent/IT1123506B/it active
- 1979-07-30 NL NLAANVRAGE7905867,A patent/NL189738B/xx not_active IP Right Cessation
- 1979-07-31 JP JP54096878A patent/JPS5914111B2/ja not_active Expired
- 1979-08-08 IE IE1447/79A patent/IE48605B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR2445622B1 (es) | 1984-08-10 |
JPS5521594A (en) | 1980-02-15 |
JPS5914111B2 (ja) | 1984-04-03 |
SE7906298L (sv) | 1980-02-01 |
IT1123506B (it) | 1986-04-30 |
DE2930291A1 (de) | 1980-02-21 |
NL7905867A (nl) | 1980-02-04 |
AU524453B2 (en) | 1982-09-16 |
GB2026393A (en) | 1980-02-06 |
AU4923679A (en) | 1980-02-07 |
FR2445622A1 (fr) | 1980-07-25 |
NL189738B (nl) | 1993-02-01 |
IL57890A (en) | 1981-12-31 |
US4256534A (en) | 1981-03-17 |
IL57890A0 (en) | 1979-11-30 |
IT7924774A0 (it) | 1979-07-30 |
GB2026393B (en) | 1982-11-03 |
SE442357B (sv) | 1985-12-16 |
IE791447L (en) | 1980-01-31 |
BE877895A (fr) | 1979-11-16 |
IE48605B1 (en) | 1985-03-20 |
CA1121306A (en) | 1982-04-06 |
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