ES255834A1 - Improvements in or relating to solid-state image intensifiers - Google Patents
Improvements in or relating to solid-state image intensifiersInfo
- Publication number
- ES255834A1 ES255834A1 ES0255834A ES255834A ES255834A1 ES 255834 A1 ES255834 A1 ES 255834A1 ES 0255834 A ES0255834 A ES 0255834A ES 255834 A ES255834 A ES 255834A ES 255834 A1 ES255834 A1 ES 255834A1
- Authority
- ES
- Spain
- Prior art keywords
- photo
- conductive
- layer
- elements
- polarized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 8
- 210000003298 dental enamel Anatomy 0.000 abstract 5
- 239000011521 glass Substances 0.000 abstract 4
- 230000005855 radiation Effects 0.000 abstract 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- -1 aluminium activated zinc sulphide Chemical class 0.000 abstract 2
- 239000011230 binding agent Substances 0.000 abstract 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 229910052744 lithium Inorganic materials 0.000 abstract 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 abstract 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Compositions (AREA)
Abstract
A solid state image intensifier incorporates a layer of 70-90, preferably 80%, by volume of finely divided, photo-conductive cadmium sulphide or selenide and 10-30% by volume of electret material which constitutes a binder. The electret material can be a lead-free, lithium containing glass enamel. A suitable composition for the enamel is in mol. per cent: Li2O-15, K2O-7.5, CaO-10.5, SrO-4.5, ZnO-10.3, TiO2-2.8, Al2O3-2.3, SiO2-18.8, B2O3-28.3. The layer is formed by spreading over ridges in the intensifier a thin coating of a suspension of the photo-conductive grains and the powdered glass enamel in an organic liquid such as butyl acetate and heating to about 600 DEG C. for about 3 minutes.ALSO:A solid-state image intensifier comprises electric field sensitive luminescent elements, radiation-sensitive impedance-variable elements and electrodes for applying an alternating voltage, so arranged that in operation the part of the supply voltage appearing across any luminescent element is controlled by a group consisting of at least two radiation-sensitive elements electrically associated with that luminescent element, the radiation-sensitive elements consisting of a finely divided photo-conductive material and an electret material polarized in such a manner that the group of radiation-sensitive elements electrically associated with the same luminescent element comprises at least one element polarized in one direction with respect thereto and at least one polarized in the opposite direction. As shown <PICT:0950593/C3/1> in Fig. 1, the intensifier may comprise a transparent base 1, a transparent electrode 2, an electroluminescent layer 3, an opaque layer 4, auxiliary electrode elements 5 defining elements 11 in the electroluminescent layer 3, and insulating V-section ridges 6 surmounted by electrodes 8 and covered by a photo-conductive layer 10 extending into the valleys between the ridges to contact the electrodes 5. The electroluminescent layer 3 is 50-100 microns thick and comprises 20% by volume of copper and aluminium activated zinc sulphide and 80% by volume of lead-free glass enamel. The photo-conductive layer comprises 70-90% by volume of finely divided photo-conductive copper or gallium activated cadmium sulphide or cadmium selenide or cadmium telluride and 10-30% of electret material also acting as a binder. The electret material is preferably a lead-free lithium-containing glass enamel, e.g. Li2O 15% K2O 7.5% CuO 10.5% SrO 4.5%, ZnO 10.3% TiO2 10.8% Al2O3 2.3% SiO2 18.8% B2O3 28.3% in terms of mol. per cent The electret material is polarized in the required direction by application of a direct voltage of about 650 v. from source 15 with a simultaneous exposure to white light of intensity about 20 lux for 5-10 seconds. The intensifier operates with A.C. from source 14 applied across electrode layer 2 and the electrodes 8, commoned as shown, the photo conductive elements 12, 13 associated with the electroluminescent "element" 11 being oppositely polarized. In another embodiment neighbouring "elements" of the photo-conductive layer are oppositely polarized by two successive exposures to light through an element-defining mask, the applied D.C. being reversed between the two exposures. In a further embodiment wherein after assembly, electrodes to polarize or re-polarize the electret material are inaccessible from outside, this material is contacted by insulating strips which may be rendered temporarily conductive, e.g. by irradiation or heat, to enable a polarizing voltage to be applied.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL236377 | 1959-02-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES255834A1 true ES255834A1 (en) | 1960-04-16 |
Family
ID=19751583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES0255834A Expired ES255834A1 (en) | 1959-02-20 | 1960-02-17 | Improvements in or relating to solid-state image intensifiers |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS3622517B1 (en) |
| BE (1) | BE587830A (en) |
| ES (1) | ES255834A1 (en) |
| GB (1) | GB950593A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4053309A (en) * | 1974-06-10 | 1977-10-11 | Varian Associates, Inc. | Electrophotographic imaging method |
-
1960
- 1960-02-17 ES ES0255834A patent/ES255834A1/en not_active Expired
- 1960-02-17 JP JP458860A patent/JPS3622517B1/ja active Pending
- 1960-02-19 GB GB5971/60A patent/GB950593A/en not_active Expired
- 1960-02-19 BE BE587830A patent/BE587830A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE587830A (en) | 1960-08-19 |
| JPS3622517B1 (en) | 1961-11-24 |
| GB950593A (en) | 1964-02-26 |
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