GB1089315A - Image amplification - Google Patents
Image amplificationInfo
- Publication number
- GB1089315A GB1089315A GB13216/66A GB1321666A GB1089315A GB 1089315 A GB1089315 A GB 1089315A GB 13216/66 A GB13216/66 A GB 13216/66A GB 1321666 A GB1321666 A GB 1321666A GB 1089315 A GB1089315 A GB 1089315A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- photo
- phosphor
- conductive layer
- inch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003321 amplification Effects 0.000 title 1
- 238000003199 nucleic acid amplification method Methods 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract 2
- 239000005083 Zinc sulfide Substances 0.000 abstract 2
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 2
- 239000011669 selenium Substances 0.000 abstract 2
- 229910052711 selenium Inorganic materials 0.000 abstract 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract 2
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 239000011230 binding agent Substances 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000005286 illumination Methods 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 150000003346 selenoethers Chemical class 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 239000011780 sodium chloride Substances 0.000 abstract 1
- 150000004763 sulfides Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Conversion Of X-Rays Into Visible Images (AREA)
Abstract
An image converter comprises a photo-conductive layer between electrodes, one transparent and one opaque, and a phosphor layer; an input image formed on the photo-conductor is converted by the potential maintained across the electrodes into a heat pattern in the photo-conductive layer, which is in thermal contact with the phosphor layer, and this heat pattern modifies the light output of the phosphor layer, which is not traversed by the current between the electrodes. The input may be ultra-violet, infra-red, visible or X-ray radiation, and the output may be a negative, e.g. where an ultra-violet source is used to excite the phosphor, and the applied thermal image quenches the luminescence; or a positive, e.g. where the fluoresence is enhanced by temperature, or where the phosphor stores the excitation energy, and subsequently releases it as visible light, when the phosphor temperature increases. An electro-luminescent layer may be provided between the photo-conductive layer and the opaque electrode; this layer is excited by the increase of current upon illumination of the photo-conductive layer, and the light output of this layer then further excites the photo-conductive layer, i.e. gives an optical feedback. Examples use a stannic oxide coated glass, a 0.01 inch thick layer of cadmium sulphide photo-conductor, a thin layer of conductive silver paste and a thermo-sensitive phosphor comprising 49% zinc sulphide, 49% cadmium sulphide, 2% sodium chloride, 400 ppm. silver and 2 ppm. nickel in a binder. Other photo-conductors mentioned are CdS:Cu, ZnO, selenium, and the sulphides and selenides of lead and selenium. In one embodiment, the transparent electrode consists of stannic oxide strips, 0.001 inch thick, 0.010 inch wide, 0.025 inch pitch, with a 0.007 inch photo-conductive layer and a 0.001 inch layer of electro-luminescent manganese-doped zinc sulphide in a silicone alkyl resin.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44269565A | 1965-03-25 | 1965-03-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1089315A true GB1089315A (en) | 1967-11-01 |
Family
ID=23757773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB13216/66A Expired GB1089315A (en) | 1965-03-25 | 1966-03-25 | Image amplification |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3479515A (en) |
| DE (1) | DE1539899B1 (en) |
| GB (1) | GB1089315A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3541333A (en) * | 1968-12-10 | 1970-11-17 | Us Air Force | System for enhancing fine detail in thermal photographs |
| IT948418B (en) * | 1972-02-02 | 1973-05-30 | Minnesota Mining & Mfg | SYSTEM FORMED BY THE COMBINATION OF A SOLID STATE IMAGE INTENSIFIER AND A SILVER HALIDE RADIOGRAPHIC FILM OR PLATE |
| DE2946108C2 (en) * | 1979-11-15 | 1985-02-14 | Koch & Sterzel Gmbh & Co, 4300 Essen | Radiation detector |
| JPS57141177A (en) * | 1981-02-26 | 1982-09-01 | Matsushita Electric Ind Co Ltd | Video camera with monitor |
| US4780614A (en) * | 1985-04-24 | 1988-10-25 | The Boeing Company | Method and apparatus for remote sensing of mechanical force |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE550888A (en) * | ||||
| US2642538A (en) * | 1949-02-11 | 1953-06-16 | Eastman Kodak Co | Thermal radiography using phosphors |
| US2798960A (en) * | 1953-10-01 | 1957-07-09 | Rca Corp | Photoconductive thermography |
| US2798959A (en) * | 1953-10-01 | 1957-07-09 | Rca Corp | Photoconductive thermography |
| DE1869477U (en) * | 1960-05-14 | 1963-03-28 | Philips Nv | SOLID IMAGE ENHANCER. |
| FR1364972A (en) * | 1963-07-30 | 1964-06-26 | Thomson Houston Comp Francaise | Electroluminescent device for visually observable radiation detector |
-
1965
- 1965-03-25 US US442695A patent/US3479515A/en not_active Expired - Lifetime
-
1966
- 1966-03-23 DE DE19661539899 patent/DE1539899B1/en not_active Withdrawn
- 1966-03-25 GB GB13216/66A patent/GB1089315A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3479515A (en) | 1969-11-18 |
| DE1539899B1 (en) | 1971-10-14 |
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