ES2194154T3 - Dispositivo de conversion fotoelectrica que utiliza el barrido superficial de cargas. - Google Patents

Dispositivo de conversion fotoelectrica que utiliza el barrido superficial de cargas.

Info

Publication number
ES2194154T3
ES2194154T3 ES97301258T ES97301258T ES2194154T3 ES 2194154 T3 ES2194154 T3 ES 2194154T3 ES 97301258 T ES97301258 T ES 97301258T ES 97301258 T ES97301258 T ES 97301258T ES 2194154 T3 ES2194154 T3 ES 2194154T3
Authority
ES
Spain
Prior art keywords
leveling
loads
photoelectric conversion
conversion device
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES97301258T
Other languages
English (en)
Inventor
Isamu Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2194154T3 publication Critical patent/ES2194154T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

LA INVENCION SUMINISTRA UN ELEMENTO QUE TIENE UNA FUNCION DE TRANSFERENCIA DE CARGA NIVELADORA EN UN DISPOSITIVO DE CONVERSION FOTOELECTRICO DEL TIPO DE DIRECCION X-Y, P.EJ., UN SENSOR CMOS, Y UN DISPOSITIVO DE CONVERSION FOTOELECTRICO QUE ACUMULA LAS CARGAS DE SEÑALES FOTOELECTRICAS PRODUCIDAS POR UN ELEMENTO DE CONVERSION FOTOELECTRICO (1) EN UN ELECTRODO DE CONTROL (PUERTA) DE UN TRANSISTOR MOS (2) PARA OBTENER UNA SEÑAL CON UN ALTO PORCENTAJE DE S/N ELIMINANDO LOS COMPONENTES DE SEÑAL PRODUCIDOS POR LA RADIACION DE FONDO SIN USAR NINGUN CCD COMO UN MEDIO DE ACUMULACION DE CARGAS NIVELADORAS, TIENE UN ELECTRODO NIVELADOR (12) PARA TRANSFERIR CARGAS NIVELADORAS DE ESAS PRODUCIDAS POR EL ELEMENTO DE CONVERSION FOTOELECTRICO (1), UNA REGION DEL TIPO N{SUP, +} (31) PARA ACUMULAR LAS CARGAS NIVELADORAS TRANSFERIDAS, UN TRANSISTOR MOS (2) PARA LEER LAS CARGAS POTENCIALES PROVOCADAS POR LAS CARGAS NIVELADORAS, Y UN CIRCUITO (51,52) PARA CONTROLAR AUTOMATICAMENTE LA CANTIDAD DE CARGAS NIVELADORAS QUE VAN A SER TRANSFERIDAS.
ES97301258T 1996-02-27 1997-02-26 Dispositivo de conversion fotoelectrica que utiliza el barrido superficial de cargas. Expired - Lifetime ES2194154T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03961496A JP3559640B2 (ja) 1996-02-27 1996-02-27 光電変換装置

Publications (1)

Publication Number Publication Date
ES2194154T3 true ES2194154T3 (es) 2003-11-16

Family

ID=12557995

Family Applications (1)

Application Number Title Priority Date Filing Date
ES97301258T Expired - Lifetime ES2194154T3 (es) 1996-02-27 1997-02-26 Dispositivo de conversion fotoelectrica que utiliza el barrido superficial de cargas.

Country Status (6)

Country Link
US (2) US6064431A (es)
EP (1) EP0793378B1 (es)
JP (1) JP3559640B2 (es)
DE (1) DE69721109T2 (es)
ES (1) ES2194154T3 (es)
HK (1) HK1002576A1 (es)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3559640B2 (ja) * 1996-02-27 2004-09-02 キヤノン株式会社 光電変換装置
US6141045A (en) * 1997-09-22 2000-10-31 Xerox Corporation Method for detecting defective photosensor circuits in a photosensor array
TW421962B (en) * 1997-09-29 2001-02-11 Canon Kk Image sensing device using mos type image sensing elements
JP4200545B2 (ja) 1998-06-08 2008-12-24 ソニー株式会社 固体撮像素子およびその駆動方法、並びにカメラシステム
EP0999698B1 (en) * 1998-11-02 2013-06-19 Canon Kabushiki Kaisha Solid-state image pickup device and method of resetting the same
US6288387B1 (en) * 1999-04-21 2001-09-11 Raytheon Company Apparatus and method for performing optical signal intensity correction in electro-optical sensor arrays
EP1073267B1 (en) * 1999-07-30 2010-12-22 Canon Kabushiki Kaisha Radiation image pickup device
FR2798994A1 (fr) * 1999-09-24 2001-03-30 Commissariat Energie Atomique Dispositif et procede de lecture de circuit detecteur de rayonnement
US6504141B1 (en) * 2000-09-29 2003-01-07 Rockwell Science Center, Llc Adaptive amplifier circuit with enhanced dynamic range
US6900839B1 (en) 2000-09-29 2005-05-31 Rockwell Science Center, Llc High gain detector amplifier with enhanced dynamic range for single photon read-out of photodetectors
US6873359B1 (en) 2000-09-29 2005-03-29 Rockwell Science Center, Llc. Self-adjusting, adaptive, minimal noise input amplifier circuit
US6965707B1 (en) 2000-09-29 2005-11-15 Rockwell Science Center, Llc Compact active pixel with low-noise snapshot image formation
US6888572B1 (en) 2000-10-26 2005-05-03 Rockwell Science Center, Llc Compact active pixel with low-noise image formation
US6538245B1 (en) 2000-10-26 2003-03-25 Rockwell Science Center, Llc. Amplified CMOS transducer for single photon read-out of photodetectors
JP2005050951A (ja) 2003-07-31 2005-02-24 Toshiba Corp 固体撮像装置および電荷転送装置
US20050083421A1 (en) * 2003-10-16 2005-04-21 Vladimir Berezin Dynamic range enlargement in CMOS image sensors
JP4678676B2 (ja) * 2004-12-10 2011-04-27 株式会社堀場製作所 物理現象または化学現象の測定方法または測定装置
JP4459064B2 (ja) * 2005-01-14 2010-04-28 キヤノン株式会社 固体撮像装置、その制御方法及びカメラ
JP4416668B2 (ja) * 2005-01-14 2010-02-17 キヤノン株式会社 固体撮像装置、その制御方法及びカメラ
JP2006197392A (ja) * 2005-01-14 2006-07-27 Canon Inc 固体撮像装置、カメラ、及び固体撮像装置の駆動方法
US7489351B2 (en) * 2005-01-21 2009-02-10 Bae Systems Information And Electronic Systems Integration Inc. Dynamic range extension for focal plane arrays
US7508434B2 (en) * 2005-06-28 2009-03-24 Motorola, Inc. Image sensor architecture employing one or more floating gate devices
US7710481B2 (en) * 2006-01-30 2010-05-04 Motorola, Inc. Image sensor architecture employing one or more non-volatile memory cells
JP3996618B1 (ja) * 2006-05-11 2007-10-24 総吉 廣津 半導体撮像素子
US7696545B2 (en) 2006-08-29 2010-04-13 Micron Technology, Inc. Skimmed charge capture and charge packet removal for increased effective pixel photosensor full well capacity
JP4866257B2 (ja) * 2007-02-09 2012-02-01 株式会社Ｋｅｎｚａｎ 半導体撮像素子
US8009216B2 (en) * 2008-07-16 2011-08-30 International Business Machines Corporation Pixel sensor cell with frame storage capability
US8009215B2 (en) * 2008-07-16 2011-08-30 International Business Machines Corporation Pixel sensor cell with frame storage capability
US8605181B2 (en) 2010-11-29 2013-12-10 Teledyne Dalsa B.V. Pixel for correlated double sampling with global shutter
US9526468B2 (en) 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
JP6871797B2 (ja) 2017-04-24 2021-05-12 キヤノン株式会社 光電変換装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4866496A (en) * 1986-06-24 1989-09-12 U.S. Philips Corp. Charger transfer device (CTD), eliminating the background level of a detected signal, detection structure and method of using such a CTD
US4743959A (en) * 1986-09-17 1988-05-10 Frederiksen Jeffrey E High resolution color video image acquisition and compression system
JPH0748826B2 (ja) * 1988-12-01 1995-05-24 三菱電機株式会社 固体撮像装置
WO1991004633A1 (en) * 1989-09-23 1991-04-04 Vlsi Vision Limited I.c. sensor
JPH04172085A (ja) * 1990-11-05 1992-06-19 Mitsubishi Electric Corp 固体撮像装置
CA2095739A1 (en) * 1992-05-27 1993-11-28 Michael J. Mcnutt Charge skimming and variable integration time in focal plane arrays
JP3271808B2 (ja) 1992-12-02 2002-04-08 チッソ株式会社 ドレイン材およびその製造方法
US5717199A (en) * 1996-01-26 1998-02-10 Cid Technologies, Inc. Collective charge reading and injection in random access charge transfer devices
JP3559640B2 (ja) * 1996-02-27 2004-09-02 キヤノン株式会社 光電変換装置

Also Published As

Publication number Publication date
JP3559640B2 (ja) 2004-09-02
EP0793378A2 (en) 1997-09-03
DE69721109D1 (de) 2003-05-28
EP0793378B1 (en) 2003-04-23
US20010040634A1 (en) 2001-11-15
JPH09233392A (ja) 1997-09-05
US6064431A (en) 2000-05-16
EP0793378A3 (en) 1998-07-01
HK1002576A1 (en) 1998-09-04
DE69721109T2 (de) 2003-12-04
US6342920B2 (en) 2002-01-29

Similar Documents

Publication Publication Date Title
ES2194154T3 (es) Dispositivo de conversion fotoelectrica que utiliza el barrido superficial de cargas.
Chamberlain et al. A novel wide dynamic range silicon photodetector and linear imaging array
RU2004125149A (ru) Обнаружение заряда или частицы
DE69218128D1 (de) Härtbare Organosiloxanzusammensetzungen, die elektrisch leitfähige Materialien ergeben
TWI587699B (zh) 感光電路及其控制方法
DK1042689T3 (da) Anordning til digital subtraktions-angiografi
EP0239085A3 (en) Device for micro-movement of objects
ATE343248T1 (de) Oszillatorschaltung
EP1139454A3 (en) Electro-optical device
KR890011393A (ko) 고체촬상장치
DE60002612D1 (de) Photodetektor und verfahren zur detektion von strahlung
ATE14170T1 (de) Schutzanordnung fuer elektronische schaltungen, wie integrierte schaltungen, gegen elektrostatische ladungen.
KR880009447A (ko) 레치업 방지회로를 가진 c-mos 집적회로장치
ATE317383T1 (de) Mono-, oligo und polyalkylidenfluorene und ihre verwendung als ladungstransportmaterialien
DE60302025D1 (de) Mono-,Oligo- und Poly(3-Alkynylthiophene) und ihre Verwendung als Ladungstransportmaterialien
KR940006274A (ko) 반도체 장치
EP0495500B1 (en) Charge transfer device equipped with charge signal detector improved in sensitivity as well as in voltage amplification
DE69114408D1 (de) Konstantspannungserzeugungsschaltung.
DE59107793D1 (de) Regelschaltung für einen Substratvorspannungsgenerator
SE0201853D0 (sv) Compositions for ceramic igniters
KR880010607A (ko) 전하전송장치의 출력장치
DE3671676D1 (de) Ladungstransferschaltungsanordnung.
EP0404008A3 (en) Substrate bias generation circuit used in semiconductor integrated circuit
US20090072121A1 (en) Device for detecting an electromagnetic radiation with current limitation
DE3764991D1 (de) Eingangsstufe fuer ccd-anordnung.