ES2159391T3 - Substrato para recubrimiento. - Google Patents
Substrato para recubrimiento.Info
- Publication number
- ES2159391T3 ES2159391T3 ES97908102T ES97908102T ES2159391T3 ES 2159391 T3 ES2159391 T3 ES 2159391T3 ES 97908102 T ES97908102 T ES 97908102T ES 97908102 T ES97908102 T ES 97908102T ES 2159391 T3 ES2159391 T3 ES 2159391T3
- Authority
- ES
- Spain
- Prior art keywords
- pct
- substrate
- coating
- thin
- substrate surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title abstract 7
- 239000011248 coating agent Substances 0.000 title abstract 3
- 238000000576 coating method Methods 0.000 title abstract 3
- 238000009501 film coating Methods 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
- Y10T428/12764—Next to Al-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thermal Sciences (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Electroplating Methods And Accessories (AREA)
- Adornments (AREA)
Abstract
SUSTRATO DE RECUBRIMIENTO, QUE CONTIENE UN PRODUCTO ENROLLADO FORMADO DE ALUMINIO O DE ALEACIONES DE ALUMINIO, PARA RECUBRIMIENTOS POR LAMINA FINA PARA OBTENER COMPONENTES ELECTRONICOS. EL SUSTRATO DE RECUBRIMIENTO EVITA LA INTERDIFUSION DE ELEMENTOS DEL SUSTRATO Y ELEMENTOS DE RECUBRIMENTO DE LA LAMINA FINA Y POSIBILITA EL CONTROL TOTAL DE IRREGULARIDADES MEDIANTE LOS RECUBRIMIENTOS EN LAMINA FINA. LAS IRREGULARIDADES PRESENTES DE MANERA LOCAL SOBRE LA SUPERFICIE DEL SUSTRATO QUE SE VA A RECUBRIR, QUE TIENEN UNA EXTENSION MAXIMA MEDIDA VERTICALMENTE CON RESPECTO A LA SUPERFICIE DEL SUSTRATO, MENOR DE 10 MI M Y MAS DE 0,1 MI M, ESTAN DE TAL MANERA QUE LOS LADOS DE LAS IRREGULARIDADES TOTALES SE PUEDEN EXPONER COMPLETAMENTE A LA DEPOSICION DE MATERIAL QUE SE COLOCA SOBRE LA SUPERFICIE DEL SUSTRATO DE UNA MANERA PERPENDICULAR.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH86596 | 1996-04-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2159391T3 true ES2159391T3 (es) | 2001-10-01 |
Family
ID=4196989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES97908102T Expired - Lifetime ES2159391T3 (es) | 1996-04-03 | 1997-03-27 | Substrato para recubrimiento. |
Country Status (10)
Country | Link |
---|---|
US (1) | US6124039A (es) |
EP (1) | EP0914486B1 (es) |
AT (1) | ATE203781T1 (es) |
AU (1) | AU2020597A (es) |
CA (1) | CA2250535C (es) |
DE (1) | DE59704202D1 (es) |
ES (1) | ES2159391T3 (es) |
PT (1) | PT914486E (es) |
TW (1) | TW589387B (es) |
WO (1) | WO1997038145A1 (es) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SK285652B6 (sk) * | 1998-12-24 | 2007-05-03 | Qiagen Gmbh | Ultrafóbny povrch |
DE19916061A1 (de) * | 1999-04-09 | 2000-10-12 | Bayer Ag | Siliciumformteile mit zeitlich stabiler elektronischer Oberflächenpassivierung |
GB2354188A (en) * | 1999-09-16 | 2001-03-21 | Univ Sheffield | Plasma treatment of substrate for adhesive or coating |
US6379382B1 (en) | 2000-03-13 | 2002-04-30 | Jun Yang | Stent having cover with drug delivery capability |
US7053294B2 (en) * | 2001-07-13 | 2006-05-30 | Midwest Research Institute | Thin-film solar cell fabricated on a flexible metallic substrate |
US6579472B2 (en) | 2001-07-27 | 2003-06-17 | The Boeing Company | Corrosion inhibiting sol-gel coatings for metal alloys |
US6768048B2 (en) * | 2002-12-04 | 2004-07-27 | The Boeing Company | Sol-gel coatings for solar cells |
US20050072461A1 (en) * | 2003-05-27 | 2005-04-07 | Frank Kuchinski | Pinhole porosity free insulating films on flexible metallic substrates for thin film applications |
US8642455B2 (en) * | 2004-02-19 | 2014-02-04 | Matthew R. Robinson | High-throughput printing of semiconductor precursor layer from nanoflake particles |
US7306823B2 (en) | 2004-09-18 | 2007-12-11 | Nanosolar, Inc. | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
US20070169809A1 (en) * | 2004-02-19 | 2007-07-26 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides |
US7604843B1 (en) | 2005-03-16 | 2009-10-20 | Nanosolar, Inc. | Metallic dispersion |
US8309163B2 (en) * | 2004-02-19 | 2012-11-13 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material |
US7605328B2 (en) * | 2004-02-19 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic thin-film cell produced from metallic blend using high-temperature printing |
US8623448B2 (en) * | 2004-02-19 | 2014-01-07 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles |
US8372734B2 (en) | 2004-02-19 | 2013-02-12 | Nanosolar, Inc | High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles |
US20060060237A1 (en) * | 2004-09-18 | 2006-03-23 | Nanosolar, Inc. | Formation of solar cells on foil substrates |
US8846141B1 (en) | 2004-02-19 | 2014-09-30 | Aeris Capital Sustainable Ip Ltd. | High-throughput printing of semiconductor precursor layer from microflake particles |
US20070163639A1 (en) * | 2004-02-19 | 2007-07-19 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from microflake particles |
US7700464B2 (en) * | 2004-02-19 | 2010-04-20 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from nanoflake particles |
US8329501B1 (en) | 2004-02-19 | 2012-12-11 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles |
US20070163642A1 (en) * | 2004-02-19 | 2007-07-19 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles |
US7663057B2 (en) * | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
FR2870989B1 (fr) * | 2004-05-27 | 2006-08-04 | Commissariat Energie Atomique | Substrat pour application electronique, comprenant un support flexible et son procede de fabrication |
US7732229B2 (en) * | 2004-09-18 | 2010-06-08 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
US7838868B2 (en) | 2005-01-20 | 2010-11-23 | Nanosolar, Inc. | Optoelectronic architecture having compound conducting substrate |
US20090032108A1 (en) * | 2007-03-30 | 2009-02-05 | Craig Leidholm | Formation of photovoltaic absorber layers on foil substrates |
US8541048B1 (en) | 2004-09-18 | 2013-09-24 | Nanosolar, Inc. | Formation of photovoltaic absorber layers on foil substrates |
US8927315B1 (en) | 2005-01-20 | 2015-01-06 | Aeris Capital Sustainable Ip Ltd. | High-throughput assembly of series interconnected solar cells |
EP1829991A1 (fr) * | 2006-03-02 | 2007-09-05 | UGINE & ALZ FRANCE | Tôle en acier inoxydable revêtue par un revêtement auto-nettoyant |
DE102006028429B3 (de) | 2006-06-21 | 2007-06-28 | Fachhochschule Kiel | Verfahren zur Herstellung einer Absorberbeschichtung auf Sol-Gel-Basis für Solarthermie |
EP1993142A1 (de) * | 2007-05-14 | 2008-11-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Reflektiv beschichtetes Halbleiterbauelement, Verfahren zu dessen Herstellung sowie dessen Verwendung |
US20080302357A1 (en) * | 2007-06-05 | 2008-12-11 | Denault Roger | Solar photovoltaic collector hybrid |
EP2165366B8 (en) * | 2007-07-04 | 2018-12-26 | Beijing Xiaomi Mobile Software Co., Ltd. | A method for forming a patterned layer on a substrate |
JP5064935B2 (ja) * | 2007-08-22 | 2012-10-31 | 株式会社神戸製鋼所 | 耐久性と低汚染性を兼備した陽極酸化処理アルミニウム合金 |
US20090065046A1 (en) * | 2007-09-12 | 2009-03-12 | Denault Roger | Solar photovoltaic module to solar collector hybrid retrofit |
EP2071632B1 (en) * | 2007-12-14 | 2013-02-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Thin-film solar cell and process for its manufacture |
DE102009004966A1 (de) | 2008-01-15 | 2009-07-23 | Mol Katalysatortechnik Gmbh | Verfahren zur Herstellung einer Solarzelle sowie Solarzelle |
US8247243B2 (en) | 2009-05-22 | 2012-08-21 | Nanosolar, Inc. | Solar cell interconnection |
US8900674B2 (en) * | 2009-10-06 | 2014-12-02 | Tel Solar Ag | Method of coating a substrate |
EP2328183A1 (de) * | 2009-11-26 | 2011-06-01 | Engineered Products Switzerland AG | Substrat mit einer Metallfolie zur Herstellung von Photovoltaik-Zellen |
TWI418472B (zh) * | 2011-08-08 | 2013-12-11 | Prior Company Ltd | 裝飾薄膜、加飾成型品以及加飾成型品的製造方法 |
US9105779B2 (en) | 2011-09-26 | 2015-08-11 | International Business Machines Corporation | Method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer |
JP6014785B2 (ja) * | 2014-10-31 | 2016-10-25 | 株式会社Uacj | 磁気ディスク用アルミニウム合金基板 |
BE1022819B1 (nl) * | 2015-03-12 | 2016-09-13 | Polyvision, Naamloze Vennootschap | Fotovoltaïsche zonnecel en werkwijze om ze te vervaardigen |
JP6646551B2 (ja) * | 2015-12-25 | 2020-02-14 | 昭和電工株式会社 | 磁気記録媒体用基板 |
JP6574740B2 (ja) * | 2016-07-08 | 2019-09-11 | 昭和電工株式会社 | 磁気記録媒体用基板およびハードディスクドライブ |
JP6832179B2 (ja) * | 2017-02-03 | 2021-02-24 | 昭和電工株式会社 | 磁気記録媒体用基板およびハードディスクドライブ |
WO2022175551A1 (en) * | 2021-02-22 | 2022-08-25 | Microshade A/S | Angular and spectrally selective shading sheet |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60119784A (ja) * | 1983-12-01 | 1985-06-27 | Kanegafuchi Chem Ind Co Ltd | 絶縁金属基板の製法およびそれに用いる装置 |
US4650736A (en) * | 1984-02-13 | 1987-03-17 | Canon Kabushiki Kaisha | Light receiving member having photosensitive layer with non-parallel interfaces |
DE3528087C2 (de) * | 1984-08-06 | 1995-02-09 | Showa Aluminum Corp | Substrat für Solarzellen aus amorphem Silicium |
CH683188A5 (de) * | 1991-01-11 | 1994-01-31 | Alusuisse Lonza Services Ag | Aluminiumoberflächen. |
CH689065A5 (de) * | 1994-11-24 | 1998-08-31 | Alusuisse Lonza Services Ag | Aluminiumoberflaechen fuer lichttechnische Zwecke. |
CH690080A5 (de) * | 1995-09-12 | 2000-04-14 | Alusuisse Lonza Services Ag | Aluminium-Reflektor mit reflexionserhöhendem Schichtverbund. |
DK0802267T3 (da) * | 1996-04-18 | 2000-06-26 | Alusuisse Lonza Services Ag | Aluminiumsoverflade med interferensfarver |
US5723221A (en) * | 1996-04-26 | 1998-03-03 | Formica Corporation | Aluminous press plate and process for producing same |
-
1997
- 1997-03-27 DE DE59704202T patent/DE59704202D1/de not_active Expired - Lifetime
- 1997-03-27 ES ES97908102T patent/ES2159391T3/es not_active Expired - Lifetime
- 1997-03-27 EP EP19970908102 patent/EP0914486B1/de not_active Expired - Lifetime
- 1997-03-27 US US09/155,702 patent/US6124039A/en not_active Expired - Fee Related
- 1997-03-27 AU AU20205/97A patent/AU2020597A/en not_active Abandoned
- 1997-03-27 WO PCT/CH1997/000130 patent/WO1997038145A1/de active IP Right Grant
- 1997-03-27 AT AT97908102T patent/ATE203781T1/de not_active IP Right Cessation
- 1997-03-27 CA CA 2250535 patent/CA2250535C/en not_active Expired - Fee Related
- 1997-03-27 PT PT97908102T patent/PT914486E/pt unknown
- 1997-04-03 TW TW86104282A patent/TW589387B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA2250535A1 (en) | 1997-10-16 |
EP0914486A1 (de) | 1999-05-12 |
ATE203781T1 (de) | 2001-08-15 |
TW589387B (en) | 2004-06-01 |
AU2020597A (en) | 1997-10-29 |
CA2250535C (en) | 2004-05-18 |
WO1997038145A1 (de) | 1997-10-16 |
DE59704202D1 (de) | 2001-09-06 |
PT914486E (pt) | 2001-11-30 |
US6124039A (en) | 2000-09-26 |
EP0914486B1 (de) | 2001-08-01 |
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Legal Events
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FG2A | Definitive protection |
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