ES2079445T3 - Procedimiento para la formacion de una pelicula con deposito de metal, conteniendo aluminio como componente principal, utilizando hidruro de alquil aluminio. - Google Patents
Procedimiento para la formacion de una pelicula con deposito de metal, conteniendo aluminio como componente principal, utilizando hidruro de alquil aluminio.Info
- Publication number
- ES2079445T3 ES2079445T3 ES90309832T ES90309832T ES2079445T3 ES 2079445 T3 ES2079445 T3 ES 2079445T3 ES 90309832 T ES90309832 T ES 90309832T ES 90309832 T ES90309832 T ES 90309832T ES 2079445 T3 ES2079445 T3 ES 2079445T3
- Authority
- ES
- Spain
- Prior art keywords
- film
- procedure
- formation
- main component
- metal deposit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title abstract 3
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 125000005234 alkyl aluminium group Chemical group 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PROCESO PARA LA FORMACION DE UNA PELICULA DE AL QUE CONTENGA SI DE GRAN CALIDAD SEGUN EL METODO CVD QUE UTILIZA UN HIBRIDO DE ALUMINIO DE ALQUILO Y UN GAS QUE CONTENGA SILICIO E HIDROGENO. SE TRATA DE UN EXCELENTE PROCESO PARA LA FORMACION DE PELICULAS CON DEPOSITOS QUE TAMBIEN ADMITE LA DEPOSICION SELECTIVA DEL AL QUE CONTENGA SI.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1233927A JP2781220B2 (ja) | 1989-09-09 | 1989-09-09 | 堆積膜形成法 |
JP1233925A JP2781219B2 (ja) | 1989-09-09 | 1989-09-09 | 堆積膜形成法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2079445T3 true ES2079445T3 (es) | 1996-01-16 |
Family
ID=26531261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES90309832T Expired - Lifetime ES2079445T3 (es) | 1989-09-09 | 1990-09-07 | Procedimiento para la formacion de una pelicula con deposito de metal, conteniendo aluminio como componente principal, utilizando hidruro de alquil aluminio. |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP0417997B1 (es) |
KR (1) | KR940011006B1 (es) |
AT (1) | ATE130636T1 (es) |
DE (1) | DE69023724T2 (es) |
DK (1) | DK0417997T3 (es) |
ES (1) | ES2079445T3 (es) |
GR (1) | GR3018958T3 (es) |
MY (1) | MY107426A (es) |
PT (1) | PT95233B (es) |
SG (1) | SG43271A1 (es) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0498580A1 (en) * | 1991-02-04 | 1992-08-12 | Canon Kabushiki Kaisha | Method for depositing a metal film containing aluminium by use of alkylaluminium halide |
GB2320129B (en) * | 1996-06-24 | 2001-09-26 | United Microelectronics Corp | Method of fabricating an aluminium plug for contact with a semiconductor device |
-
1990
- 1990-09-06 PT PT95233A patent/PT95233B/pt not_active IP Right Cessation
- 1990-09-07 ES ES90309832T patent/ES2079445T3/es not_active Expired - Lifetime
- 1990-09-07 DE DE69023724T patent/DE69023724T2/de not_active Expired - Fee Related
- 1990-09-07 DK DK90309832.5T patent/DK0417997T3/da active
- 1990-09-07 SG SG1996006781A patent/SG43271A1/en unknown
- 1990-09-07 EP EP90309832A patent/EP0417997B1/en not_active Expired - Lifetime
- 1990-09-07 AT AT90309832T patent/ATE130636T1/de not_active IP Right Cessation
- 1990-09-08 MY MYPI90001545A patent/MY107426A/en unknown
- 1990-09-10 KR KR1019900014260A patent/KR940011006B1/ko not_active IP Right Cessation
-
1996
- 1996-02-14 GR GR960400359T patent/GR3018958T3/el unknown
Also Published As
Publication number | Publication date |
---|---|
EP0417997A1 (en) | 1991-03-20 |
KR940011006B1 (ko) | 1994-11-22 |
PT95233A (pt) | 1991-05-22 |
KR910007076A (ko) | 1991-04-30 |
DE69023724T2 (de) | 1996-05-09 |
ATE130636T1 (de) | 1995-12-15 |
DK0417997T3 (da) | 1995-12-27 |
DE69023724D1 (de) | 1996-01-04 |
EP0417997B1 (en) | 1995-11-22 |
GR3018958T3 (en) | 1996-05-31 |
MY107426A (en) | 1995-12-30 |
SG43271A1 (en) | 1997-10-17 |
PT95233B (pt) | 1998-06-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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