ES2067410B1 - Recubrimientos de nitruro de silicio producidos mediante lampara excimera de descarga silenciosa. - Google Patents
Recubrimientos de nitruro de silicio producidos mediante lampara excimera de descarga silenciosa.Info
- Publication number
- ES2067410B1 ES2067410B1 ES9301284A ES9301284A ES2067410B1 ES 2067410 B1 ES2067410 B1 ES 2067410B1 ES 9301284 A ES9301284 A ES 9301284A ES 9301284 A ES9301284 A ES 9301284A ES 2067410 B1 ES2067410 B1 ES 2067410B1
- Authority
- ES
- Spain
- Prior art keywords
- lamp
- silicon nitride
- excimera
- nitride coatings
- silent discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
RECUBRIMIENTOS DE NITRURO DE SILICIO PRODUCIDOS MEDIANTE LAMPARA EXCIMERA DE DESCARGA SILENCIOSA. RECUBRIMIENTOS DE NITRURO DE SILICIO PUEDEN SER APLICADOS SOBRE DIFERENTES MATERIALES Y COMPONENTES POR MEDIO DE UN METODO BASADO EN LA DEPOSICION QUIMICA A PARTIR DE VAPOR INDUCIDA POR LAMPARA (LAMP-CVD). LA FLEXIBILIDAD DE ESTE METODO PERMITE CONTROLAR LAS PROPIEDADES FISICO-QUIMICAS DE LOS RECUBRIMIENTOS, SIENDO DE ESPECIAL APLICACION EN LOS CAMPOS DE LA MICROELECTRONICA, OPTOELECTRONICA, CELULAS SOLARES Y PROTECCION DE MATERIALES.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES9301284A ES2067410B1 (es) | 1993-06-10 | 1993-06-10 | Recubrimientos de nitruro de silicio producidos mediante lampara excimera de descarga silenciosa. |
PCT/ES1994/000058 WO1994029493A2 (es) | 1993-06-10 | 1994-06-09 | Recubrimientos ceramicos producidos mediante lampara excimera de descarga silenciosa |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES9301284A ES2067410B1 (es) | 1993-06-10 | 1993-06-10 | Recubrimientos de nitruro de silicio producidos mediante lampara excimera de descarga silenciosa. |
Publications (2)
Publication Number | Publication Date |
---|---|
ES2067410A1 ES2067410A1 (es) | 1995-03-16 |
ES2067410B1 true ES2067410B1 (es) | 1995-11-01 |
Family
ID=8282143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES9301284A Expired - Fee Related ES2067410B1 (es) | 1993-06-10 | 1993-06-10 | Recubrimientos de nitruro de silicio producidos mediante lampara excimera de descarga silenciosa. |
Country Status (2)
Country | Link |
---|---|
ES (1) | ES2067410B1 (es) |
WO (1) | WO1994029493A2 (es) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200424343A (en) * | 2002-09-05 | 2004-11-16 | Asml Us Inc | Low temperature deposition of silicon based thin films by single-wafer hot-wall rapid thermal chemical vapor deposition |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0174743A3 (en) * | 1984-09-05 | 1988-06-08 | Morton Thiokol, Inc. | Process for transition metal nitrides thin film deposition |
US4631199A (en) * | 1985-07-22 | 1986-12-23 | Hughes Aircraft Company | Photochemical vapor deposition process for depositing oxide layers |
JPS6274084A (ja) * | 1985-09-27 | 1987-04-04 | Sanyo Electric Co Ltd | 周期構造膜の製造方法 |
US4910043A (en) * | 1987-07-16 | 1990-03-20 | Texas Instruments Incorporated | Processing apparatus and method |
DE3919538A1 (de) * | 1989-06-15 | 1990-12-20 | Asea Brown Boveri | Beschichtungsvorrichtung |
FR2651782B1 (fr) * | 1989-09-14 | 1993-03-19 | Air Liquide | Procede pour la realisation d'un depot d'un revetement protecteur inorganique et amorphe sur un substrat polymerique organique. |
JP2637265B2 (ja) * | 1990-06-28 | 1997-08-06 | 株式会社東芝 | 窒化珪素膜の形成方法 |
-
1993
- 1993-06-10 ES ES9301284A patent/ES2067410B1/es not_active Expired - Fee Related
-
1994
- 1994-06-09 WO PCT/ES1994/000058 patent/WO1994029493A2/es active Application Filing
Also Published As
Publication number | Publication date |
---|---|
ES2067410A1 (es) | 1995-03-16 |
WO1994029493A2 (es) | 1994-12-22 |
WO1994029493A3 (es) | 1995-02-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD2A | Announcement of lapse in spain |
Effective date: 20141120 |